1SMB5913B  
					THRU  
					1SMB5956B  
					Surface Mount SILICON ZENER DIODES  
					Zener Voltage 3.3 to 200 Volts 3 Watt Power Dissipation  
					FEATURES  
					* Glass passivated chip  
					* Built-in strain relief  
					* Low inductance  
					* High peak reverse power dissipation  
					* Low reverse leakage  
					* For use in stabilizing and clipping with high power rating  
					* ESD Rating of Class 3 (> 20 kV) per Human Body Model  
					* P/N suffix V means AEC-Q101 qualified, e.g:1SMB5913BV  
					* P/N suffix V means Halogen-free  
					SMB  
					0.086 (2.20)  
					0.071(1.80)  
					0.155 (3.94)  
					0.130 (3.30)  
					0.183 (4.65)  
					0.160 (4.06)  
					MECHANICAL DATA  
					* Epoxy: Device has UL flammability classification 94V-O  
					* Lead: Solderable per MIL-STD-750, method 2026  
					0.012 (0.305)  
					0.006 (0.152)  
					0.096 (2.44)  
					0.081 (2.05)  
					0.060 (1.52)  
					0.030 (0.76)  
					0.008 (0.203)  
					0.004 (0.102)  
					MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
					Ratings at 25 oC ambient temperature unless otherwise specified.  
					Resistive or inductive load.  
					0.220 (5.59)  
					0.205 (5.21)  
					Dimensions in inches and (millimeters)  
					Absolute Maximum Ratings (Ta = 25  
					)
					Parameter  
					Symbol  
					P
					Rating  
					3000  
					25  
					Unit  
					mW  
					/W  
					Power dissipation  
					@ TL = 75  
					Thermal Resistance, Junction to Lead  
					R JL  
					1.2  
					Maximum forward voltage at if=200mA  
					VF  
					V
					Peak Forward Surge Current 8.3 ms single half  
					sine-wave superimposed on rated load  
					(JEDEC method)  
					IFSM  
					I2T  
					A
					50  
					2
					Typical Current Square Time  
					A S  
					10.37  
					j
					Storage temperature and Jumction temperature  
					Tstg  
					-55 to +150  
					,T  
					2019-01/08  
					REV:D