找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

NZQA14VXV5T1

型号:

NZQA14VXV5T1

品牌:

ONSEMI[ ONSEMI ]

页数:

4 页

PDF大小:

151 K

NZQA5V6XV5T1 Series  
Quad Array for  
ESD Protection  
This quad monolithic silicon voltage suppressor is designed for  
applications requiring transient overvoltage protection capability. It is  
intended for use in voltage and ESD sensitive equipment such as  
computers, printers, business machines, communication systems,  
medical equipment, and other applications. Its quad junction common  
anode design protects four separate lines using only one package.  
These devices are ideal for situations where board space is at a  
premium.  
http://onsemi.com  
Specification Features  
SOT--553 Package Allows Four Separate Unidirectional  
Configurations  
SOT--553  
CASE 463B  
PLASTIC  
Low Leakage < 1 mA @ 3 Volt for NZQA5V6XV5T1  
Breakdown Voltage: 5.6 Volt -- 6.8 Volt @ 1 mA  
ESD Protection Meeting IEC61000--4--2 -- Level 4  
MARKING DIAGRAM  
These devices are available in Pb--free package(s). Specifications herein  
apply to both standard and Pb--free devices. Please see our website at  
www.onsemi.com for specific Pb--free orderable part numbers, or  
contact your local ON Semiconductor sales office or representative.  
xx D  
xx = Device Marking  
Mechanical Characteristics  
D
= One Digit Date Code  
Void Free, Transfer--Molded, Thermosetting Plastic Case  
Corrosion Resistant Finish, Easily Solderable  
Package Designed for Optimal Automated Board Assembly  
Small Package Size for High Density Applications  
100% Lead Free, MSL1 @ 260°C Reflow Temperature  
1
2
3
5
4
ORDERING INFORMATION  
Device  
Package  
Shipping  
NZQA5V6XV5T1 SOT--553 4000/Tape & Reel  
NZQA5V6XV5T3 SOT--553 16000/Tape & Reel  
NZQA6V2XV5T1 SOT--553 4000/Tape & Reel  
NZQA6V8XV5T1 SOT--553 4000/Tape & Reel  
NZQA14VXV5T1 SOT--553 4000/Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 -- Rev. 2  
NZQA5V6XV5T1/D  
NZQA5V6XV5T1 Series  
ELECTRICAL CHARACTERISTICS  
A
I
(T = 25°C unless otherwise noted)  
I
F
Symbol  
Parameter  
Maximum Reverse Peak Pulse Current  
Clamping Voltage @ I  
I
PP  
V
C
PP  
V
V V  
BR RWM  
V
Working Peak Reverse Voltage  
C
RWM  
V
I
V
R
T
F
I
Maximum Reverse Leakage Current @ V  
I
R
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
I
T
ΘV  
Maximum Temperature Coefficient of V  
Forward Current  
I
BR  
BR  
PP  
I
F
Uni--Directional  
V
Forward Voltage @ I  
F
F
Z
Maximum Zener Impedance @ I  
Reverse Current  
ZT  
ZT  
ZK  
I
ZK  
Z
ZK  
Maximum Zener Impedance @ I  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Value  
100  
Unit  
W
Peak Power Dissipation (8 X 20 ms @ T = 25°C) (Note 1)  
P
PK  
A
Steady State Power -- 1 Diode (Note 2)  
P
300  
mW  
D
Thermal Resistance Junction to Ambient  
Above 25°C, Derate  
R
θ
JA  
370  
2.7  
°C/W  
mW/°C  
Maximum Junction Temperature  
T
150  
°C  
°C  
kV  
Jmax  
Operating Junction and Storage Temperature Range  
T T  
J
--55 to +150  
stg  
ESD Discharge  
MIL STD 883C -- Method 3015--6  
IEC1000--4--2, Air Discharge  
V
16  
16  
9
PP  
IEC1000--4--2, Contact Discharge  
Lead Solder Temperature (10 seconds duration)  
T
L
260  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Typ Capacitance  
@ 0 V Bias  
(Note 3)  
Max  
@ I  
200 mA  
Breakdown Voltage  
@ 1 mA (Volts)  
Leakage Current  
V
=
F
F
V
I
@ V  
V
Max @ I  
PP  
BR  
RM  
RM  
C
Device  
Min  
5.32  
5.89  
6.46  
13.3  
Nom  
5.6  
6.2  
6.8  
14  
Max  
5.88  
6.51  
7.14  
14.7  
V
I
(mA)  
V
(V)  
I (A)  
PP  
(pF)  
90  
(V)  
Marking  
Device  
RWM  
RWM  
C
NZQA5V6XV5T1  
NZQA6V2XV5T1  
NZQA6V8XV5T1  
NZQA14VXV5T1  
56  
62  
68  
78  
3.0  
1.0  
0.5  
0.1  
0.1  
10.5  
10  
1.3  
4.0  
4.3  
9.0  
11.5  
12.5  
25  
9.0  
8.0  
4.0  
80  
1.3  
70  
1.3  
50  
1.3  
1. Non--repetitive current per Figure 1.  
2. Only 1 diode under power. For all 4 diodes under power, P will be 25%. Mounted on FR--4 board with min pad.  
D
3. Capacitance of one diode at f = 1 MHz, V = 0 V, T = 25°C  
R
A
http://onsemi.com  
2
NZQA5V6XV5T1 Series  
110  
100  
90  
110  
WAVEFORM  
PARAMETERS  
t = 8 ms  
100  
90  
80  
70  
60  
50  
40  
30  
20  
r
80  
t
= 20 ms  
d
70  
c--t  
60  
t
= I /2  
PP  
50  
d
40  
30  
20  
10  
0
10  
0
0
5
10  
15  
t, TIME (ms)  
20  
25  
30  
0
25  
50  
75  
100  
125  
150  
T , AMBIENT TEMPERATURE (°C)  
A
Figure 2. Power Derating Curve  
Figure 1. Pulse Waveform  
100  
90  
80  
70  
60  
50  
40  
30  
20  
14  
12  
10  
8
NZQA6V8XV5T1  
NZQA6V2XV5T1  
NZQA5V6XV5T1  
6
4
2
0
10  
0
1
3
I
5
7
9
10 11 12.5 13.5  
5.3  
5.6  
5.9  
6.2  
6.5  
6.8  
7.1  
, PEAK PULSE CURRENT (A)  
V
, BREAKDOWN VOLTAGE (V)  
PP  
BR  
Figure 3. Clamping Voltage versus  
Peak Pulse Current  
Figure 4. Typical Capacitance  
http://onsemi.com  
3
NZQA5V6XV5T1 Series  
PACKAGE DIMENSIONS  
SOT--553, 5--LEAD  
CASE 463B--01  
ISSUE O  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETERS  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD THICKNESS  
IS THE MINIMUM THICKNESS OF BASE  
MATERIAL.  
A
-- X --  
C
K
5
4
3
MILLIMETERS  
INCHES  
B
-- Y --  
DIM MIN  
MAX  
1.70  
1.30  
0.60  
0.27  
MIN  
MAX  
0.067  
0.051  
0.024  
0.011  
S
A
B
C
D
G
J
1.50  
1.10  
0.50  
0.17  
0.059  
0.043  
0.020  
0.007  
1
2
0.50 BSC  
0.020 BSC  
D 5 PL  
J
0.08  
0.10  
1.50  
0.18  
0.30  
1.70  
0.003  
0.004  
0.059  
0.007  
0.012  
0.067  
G
M
0.08 (0.003)  
X
Y
K
S
STYLE 1:  
PIN 1. BASE 1  
2. EMITTER 1/2  
STYLE 2:  
PIN 1. CATHODE  
2. ANODE  
3. BASE 2  
3. CATHODE  
4. CATHODE  
5. CATHODE  
4. COLLECTOR 2  
5. COLLECTOR 1  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800--282--9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082--1312 USA  
Phone: 480--829--7710 or 800--344--3860 Toll Free USA/Canada  
Fax: 480--829--7709 or 800--344--3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2--9--1 Kamimeguro, Meguro--ku, Tokyo, Japan 153--0051  
Phone: 81--3--5773--3850  
For additional information, please contact your  
local Sales Representative.  
NZQA5V6XV5T1/D  
厂商 型号 描述 页数 下载

ONSEMI

NZQA14VAXV5T1 [ 20W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, LEAD FREE, CASE 463B-01, SMT, 5 PIN ] 4 页

ONSEMI

NZQA5V6AXV5 低电容四阵列的ESD保护[ Low Capacitance Quad Array for ESD Protection ] 4 页

ONSEMI

NZQA5V6AXV5T1 低电容四阵列的ESD保护[ Low Capacitance Quad Array for ESD Protection ] 4 页

ONSEMI

NZQA5V6AXV5T1G 瞬态电压抑制器ESD保护二极管钳位电压低[ Transient Voltage Suppressors ESD Protection Diode with Low Clamping Voltage ] 5 页

ONSEMI

NZQA5V6AXV5_09 瞬态电压抑制器ESD保护二极管钳位电压低[ Transient Voltage Suppressors ESD Protection Diode with Low Clamping Voltage ] 5 页

ONSEMI

NZQA5V6XV5T1 四阵列的ESD保护[ Quad Array for ESD Protection ] 4 页

ONSEMI

NZQA5V6XV5T1/D 四TVS阵列的ESD保护\n[ Quad TVS Array for ESD Protection ] 4 页

ONSEMI

NZQA5V6XV5T1G 四阵列的ESD保护[ Quad Array for ESD Protection ] 4 页

ONSEMI

NZQA5V6XV5T3G 四阵列的ESD保护[ Quad Array for ESD Protection ] 4 页

ONSEMI

NZQA6V2XV5T1 四阵列的ESD保护[ Quad Array for ESD Protection ] 4 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.172307s