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1SV263_12

型号:

1SV263_12

描述:

PIN二极管的VHF , UHF , AGC应用[ Pin Diode for VHF, UHF, AGC Applications ]

品牌:

SANYO[ SANYO SEMICON DEVICE ]

页数:

6 页

PDF大小:

415 K

Ordering number : EN4510E  
SANYO Sem iconductors  
DATA S HEET  
Silicon Epitaxial Type  
1SV263  
Pin Diode for VHF, UHF, AGC Applications  
Features  
Ultlasmall-sized package facilitates high-density mounting and permits 1SV263-applied equipment to  
be made smaller  
Small interterminal capacitance (C=0.23pF typ)  
Small forward series resistance (r =2.5 typ)  
Ω
s
Specications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
V
Reverse Voltage  
V
50  
50  
R
Forward Current  
I
F
mA  
mW  
°C  
Allowable Power Dissipation  
Junction Temperature  
Storage Temperature  
P
100  
125  
Tj  
Tstg  
--55 to +125  
°C  
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: MCP  
7023A-005  
• JEITA, JEDEC  
: SC-70, SOT-323  
Minimum Packing Quantity : 3,000 pcs./reel  
1SV263-TL-E  
2.0  
0.15  
Packing Type: TL  
Marking  
3
0 to 0.08  
LOT No.  
J V  
LOT No.  
1
2
TL  
0.65  
0.3  
Electrical Connection  
1 : Anode  
3
2 : No Contact  
3 : Cathode  
SANYO : MCP  
1
2
http://semicon.sanyo.com/en/network  
72512 TKIM/62005KR MSIM/O1802 TSIM TA-100270/N0901 GIIM TA-3520/41098 HA (KT)/53196 GI/42294 YH (KOTO) BX-0218  
No.4510-1/6  
1SV263  
at Ta=25°C  
Electrical Characteristics  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
V
min  
max  
Reverse Voltage  
V
I =10  
R
A
50  
μ
R
Reverse Current  
I
R
V =50V  
R
0.1  
A
μ
Forward Voltage  
V
I =50mA  
0.91  
0.23  
4.0  
0.95  
0.4  
V
F
F
Interterminal Capacitance  
C
V =50V, f=1MHz  
R
pF  
Ω
I =5mA, f=100MHz  
F
8.0  
Series Resistance  
r
s
I =10mA, f=100MHz  
F
2.5  
4.5  
Ω
Ordering Information  
Device  
Package  
MCP  
Shipping  
memo  
1SV263-TL-E  
3,000pcs./reel  
Pb Free  
I
F
-- V  
C -- V  
F
R
5
3
2
1.0  
7
Ta=25°C  
f=1MHz  
10  
7
5
5
3
2
1.0  
7
5
3
2
3
2
0.1  
7
5
3
2
0.1  
0.01  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
2
3
5
7
2
3
5
7
2
3
5 7  
100  
0.1  
1.0  
10  
Reverse Voltage, V -- V  
ID00067  
Forward Voltage, V -- V  
ID00068  
R
F
No.4510-2/6  
1SV263  
I
R
-- V  
r -- f  
s
R
5
5
Ta=25°C  
3
2
3
2
10  
1k  
7
5
7
5
3
2
3
2
1.0  
100  
7
5
7
5
3
2
3
2
0.1  
10  
7
5
7
5
3
2
3
2
10mA  
1.0  
1.0  
0.01  
0
10  
20  
30  
40  
50  
60  
ID00069  
2
3
5
7
2
3
5
7
2
3
5
7
1000  
ID00070  
2
10  
100  
Reverse Voltage, V -- V  
Frequency, f -- MHz  
R
r
s
-- I  
F
2
Ta=25°C  
f=100MHz  
1k  
7
5
3
2
100  
7
5
3
2
10  
7
5
3
2
1.0  
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
0.1  
1.0  
10  
Forward Current, I -- mA  
ID00071  
F
No.4510-3/6  
1SV263  
Embossed Taping Specication  
1SV263-TL-E  
No.4510-4/6  
1SV263  
Outline Drawing  
Land Pattern Example  
1SV263-TL-E  
Mass (g) Unit  
Unit: mm  
0.006  
mm  
* For reference  
0.7  
0.65 0.65  
No.4510-5/6  
1SV263  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment. The products mentioned herein  
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,  
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal  
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten  
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they  
grant any guarantee thereof. If you should intend to use our products for new introduction or other application  
different from current conditions on the usage of automotive device, communication device, office equipment,  
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)  
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be  
solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are  
not guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an  
independent device, the customer should always evaluate and test devices mounted in the customer's  
products or equipment.  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating  
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
Co.,Ltd. products described or contained herein.  
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,  
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute  
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a  
confirmation.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures  
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give  
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,  
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but  
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and  
structural design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or  
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Upon using the technical information or products described herein, neither warranty nor license shall be  
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any  
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third  
party's intellectual property rights which has resulted from the use of the technical information and products  
mentioned above.  
This catalog provides information as of July, 2012. Specications and information herein are subject  
to change without notice.  
PS No.4510-6/6  
厂商 型号 描述 页数 下载

TOSHIBA

1SV100 硅外延平面型变容二极管[ SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE ] 3 页

TOSHIBA

1SV101 变容二极管( FM调谐器应用)[ VARIABLE CAPACITANCE DIODE (FM TUNER APPLICATIONS) ] 3 页

TOSHIBA

1SV101(F) [ Diode VAR Cap Single 15V 28pF 3-Pin Mini ] 3 页

TOSHIBA

1SV102 变容二极管( AM无线电波段调整应用程序)[ VARIABLE CAPACITANCE DIODE (AM RADIO BAND TUNING APPLICATIONS) ] 3 页

TOSHIBA

1SV103 变容二极管, FM收音机波段调谐应用[ Variable Capacitance Diode, FM Radio Band Tuning Applications ] 2 页

NEC

1SV118 [ Variable Capacitance Diode, 600pF C(T), Silicon, Hyperabrupt, TO-92, 2 PIN ] 2 页

HITACHI

1SV121 硅外延平面PIN二极管的高频衰减器[ Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator ] 3 页

TAYCHIPST

1SV121 硅外延平面PIN二极管[ SILICON EPITAXIAL PLANAR PIN DIODE ] 2 页

HITACHI

1SV121RX [ Pin Diode, 100V V(BR), Silicon, DO-34 ] 3 页

RENESAS

1SV121RX [ 100V, SILICON, PIN DIODE, DO-34 ] 2 页

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