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8S2TH06I-M

型号:

8S2TH06I-M

描述:

超快整流器, 8的FRED Pt®[ Hyperfast Rectifier, 8 A FRED Pt® ]

品牌:

VISHAY[ VISHAY ]

页数:

7 页

PDF大小:

131 K

VS-8S2TH06I-M  
Vishay Semiconductors  
Hyperfast Rectifier, 8 A FRED Pt®  
FEATURES  
• Hyperfast recovery time, extremely low Qrr  
• Isolated TO-220 2 pin  
• High frequency PFC CCM operation  
• 175 °C maximum operating junction temperature  
• Low leakage current  
1
2
• Compliant to RoHS directive 2002/95/EC  
• Halogen-free according to IEC 61249-2-21 definition  
• Designed and qualified for industrial level  
2L TO-220  
DESCRIPTION  
VS-8S2TH06I-M 600 V series are the state of the art  
tandem hyperfast recovery rectifiers: the new insulated 2 pin  
TO-220 package provide benchmark thermal resistance  
that coupled with excellent switching performance and low  
forward voltage drop allow this device to provide 8 A DC at  
120 °C case temperature.  
Specially designed for CCM PFC application, these devices  
show incomparable performance in every current intensive  
hard switching application.  
Optimized reverse recovery stored charge enables  
downsizing of boosting switch and cooling system.  
Increased operating frequency make possible use of smaller  
reactive elements. Cost effective PFC application is then  
possible with high efficiency over wide input voltage range  
and loading factor.  
PRODUCT SUMMARY  
Package  
2L TO-220 Insulated  
IF(AV)  
8 A  
600 V  
VR  
VF at IF  
3.1 V  
trr (typ.)  
TJ max.  
Diode variation  
See Recovery table  
175 °C  
Doubler  
The new ceramic insulated package warranty insulation  
up to 2 kV and features easy mounting together with not  
insulated parts, with minimum effect on RthJC  
.
ABSOLUTE MAXIMUM RATINGS FOR BOTH DIODES  
PARAMETER  
SYMBOL  
VRRM  
IF  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Repetitive peak reverse voltage  
DC forward current  
V
50 % duty cycle, rect. waveforms, TC = 120 °C  
TC = 25 °C  
8
A
Non-repetitive peak surge current  
Operating junction and storage temperatures  
IFSM  
140  
TJ, TStg  
- 55 to 175  
°C  
ELECTRICAL SPECIFICATIONS FOR BOTH DIODES (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 8 A  
600  
-
-
-
-
-
-
-
-
-
2.7  
2.1  
1.9  
< 1  
7
3.1  
2.3  
2.1  
10  
50  
80  
-
V
Forward voltage  
VF  
IF = 8 A, TJ = 125 °C  
IF = 8 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
Junction capacitance  
IR  
TJ = 125 °C, VR = VR rated  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
μA  
pF  
27  
CT  
10.5  
Document Number: 93049  
Revision: 19-Aug-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
VS-8S2TH06I-M  
Vishay Semiconductors  
Hyperfast Rectifier, 8 A FRED Pt®  
DYNAMIC RECOVERY CHARACTERISTICS FOR BOTH DIODES (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
IF = 1.0 A, dIF/dt = - 50 A/μs, VR = 30 V  
TJ = 25 °C  
MIN.  
TYP.  
MAX.  
UNITS  
-
-
-
-
-
-
-
13  
20  
Reverse recovery time  
trr  
11  
16  
ns  
TJ = 125 °C  
23  
30  
IF = 8 A  
TJ = 25 °C  
1.5  
2.8  
7
2.5  
3.7  
15  
Peak recovery current  
IRRM  
dIF/dt = - 200 A/μs  
TJ = 125 °C  
A
VR = 390 V  
TJ = 25 °C  
Reverse recovery charge  
Qrr  
nC  
TJ = 125 °C  
35  
51  
THERMAL - MECHANICAL SPECIFICATIONS FOR BOTH DIODES  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Maximum junction and  
storage temperature range  
TJ, TStg  
- 55  
-
175  
°C  
Thermal resistance,  
junction to case  
RthJC  
RthCS  
-
-
2.30  
0.1  
2.85  
-
°C/W  
Thermal resistance,  
case to heatsink  
Mounting surface, flat, smooth  
and greased  
-
-
2.0  
-
-
g
Approximate weight  
0.07  
oz.  
6.0  
(5.0)  
12  
(10)  
kgf · cm  
(lbf · in)  
Mounting torque  
Marking device  
-
Case style 2L TO-220  
8S2TH06I  
www.vishay.com  
2
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 93049  
Revision: 19-Aug-10  
VS-8S2TH06I-M  
Vishay Semiconductors  
Hyperfast Rectifier, 8 A FRED Pt®  
100  
1000  
175 °C  
100  
150 °C  
10  
125 °C  
100 °C  
10  
1
0.1  
75 °C  
TJ = 175 °C  
TJ = 150 °C  
TJ = 125 °C  
TJ = 25 °C  
0.01  
0.001  
25 °C  
1
0.5  
1.5  
2.5  
3.5  
4.5  
5.5  
6.5  
0
100  
200  
300  
400  
500  
600  
VF - Forward Voltage Drop (V)  
VR - Reverse Voltage (V)  
Fig. 1 - Typical Forward Voltage Drop Characteristics  
Fig. 2 - Typical Values of Reverse Current vs.  
Reverse Voltage  
100  
10  
1
0
100  
200  
300  
400  
500  
600  
VR - Reverse Voltage (V)  
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage  
10  
1
D = 0.50  
D = 0.20  
D = 0.10  
D = 0.05  
D = 0.02  
D = 0.01  
0.1  
Single pulse  
(thermal resistance)  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t1 - Rectangular Pulse Duration (s)  
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics  
Document Number: 93049  
Revision: 19-Aug-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
3
VS-8S2TH06I-M  
Vishay Semiconductors  
Hyperfast Rectifier, 8 A FRED Pt®  
200  
100  
VR = 390 V  
IF = 8 A, 125 °C  
150  
DC  
100  
10  
IF = 8 A, 25 °C  
Square wave (D = 50)  
50 % rated VR applied  
50  
See note (1)  
0
1
100  
0
2
4
6
8
10  
12  
14  
1000  
IF(AV) - Average Forward Current (A)  
dIF/dt (A/µs)  
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt  
Fig. 5 - Maximum Allowable Case Temperature vs.  
Average Forward Current  
30  
1000  
VR = 390 V  
25  
20  
15  
10  
5
IF = 8 A, 125 °C  
100  
10  
1
D = 0.01  
D = 0.02  
D = 0.05  
D = 0.1  
D = 0.2  
D = 0.5  
IF = 8 A, 25 °C  
RMS limit  
DC  
4
0
0
2
6
8
10  
12  
14  
100  
1000  
IF(AV) - Average Forward Current (A)  
Fig. 6 - Forward Power Loss Characteristics  
dIF/dt (A/µs)  
Fig. 8 - Typical Stored Charge vs. dIF/dt  
Note  
(1)  
Formula used: TC = TJ - (Pd +PdREV) x RthJC  
;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 50 % rated VR  
www.vishay.com  
4
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 93049  
Revision: 19-Aug-10  
VS-8S2TH06I-M  
Vishay Semiconductors  
Hyperfast Rectifier, 8 A FRED Pt®  
ORDERING INFORMATION TABLE  
Device code  
VS-  
8
S2  
T
H
06  
I
-M  
1
2
3
4
5
6
7
8
1
-
-
-
-
-
-
-
-
Vishay Semiconductors product suffix  
Current rating (8 = 8 A)  
S2 = Doubler true 2 pin  
T = TO-220  
2
3
4
5
6
7
8
H = Hyperfast recovery  
Voltage rating (06 = 600 V)  
I = Insulated  
Environmental digit:  
-M = Halogen-free, RoHS compliant and terminations lead (Pb)-free  
LINKS TO RELATED DOCUMENTS  
www.vishay.com/doc?95171  
www.vishay.com/doc?95170  
www.vishay.com/doc?95257  
Dimensions  
Part marking information  
SPICE model  
Document Number: 93049  
Revision: 19-Aug-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
5
Outline Dimensions  
Vishay High Power Products  
TO-220-2L  
DIMENSIONS in millimeters and inches  
D
A
Ø
F
c1  
E1  
E
L1  
A1  
b1  
L
b
c
e1  
MILLIMETERS  
INCHES  
SYMBOL  
MIN.  
4.420  
2.520  
0.710  
1.170  
0.360  
1.170  
9.950  
8.990  
12.550  
4.980  
2.59  
MAX.  
4.720  
2.820  
0.910  
1.370  
0.460  
1.370  
10.250  
9.290  
12.850  
5.180  
2.89  
MIN.  
0.174  
0.099  
0.028  
0.046  
0.014  
0.046  
0.392  
0.354  
0.494  
0.196  
0.102  
0.515  
0.136  
0.149  
MAX.  
0.186  
0.111  
0.036  
0.054  
0.018  
0.054  
0.404  
0.366  
0.506  
0.204  
0.114  
0.531  
0.152  
0.153  
A
A1  
b
b1  
c
c1  
D
E
E1  
e1  
F
L
13.08  
3.47  
13.48  
3.87  
L1  
Ø
3.79  
3.89  
Document Number: 95171  
Revision: 24-Apr-09  
For technical questions concerning discrete products, contact: diodes-tech@vishay.com  
For technical questions concerning module products, contact: ind-modules@vishay.com  
www.vishay.com  
1
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Material Category Policy  
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the  
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council  
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment  
(EEE) - recast, unless otherwise specified as non-compliant.  
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that  
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.  
Revision: 12-Mar-12  
Document Number: 91000  
1
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