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TYN612T

型号:

TYN612T

描述:

敏感及标准( 12A可控硅)[ SENSITIVE & STANDARD(12A SCRs) ]

品牌:

THINKISEMI[ Thinki Semiconductor Co., Ltd. ]

页数:

6 页

PDF大小:

677 K

TYN612T  
®
TYN612T  
Pb Free Plating Product  
SENSITIVE & STANDARD(12A SCRs)  
Description  
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose  
switching and phase control applications. These devices are intended to be interfaced directly to  
microcontrollers, logic integrated circuits and other low power gate trigger circuits.  
Applications:  
Simplified outline  
Symbol  
Motor control  
Industrial and domestic lighting  
Heating  
a
k
g
Static switching  
1 2 3  
TO-220  
Description  
Pin  
Features  
1
Cathode  
Anode  
Gate  
Blocking voltage to 600 V  
On-state RMS current to 12A  
Ultra low gate trigger current  
2
3
SYMBOL  
PARAMETER  
Value  
Unit  
600  
V
DRM  
V
A
A
Repetitive peak off-state voltages  
RMS on-state current  
I
T
RMS  
12  
I
TSM  
140  
Non-repetitive surge peak on-state current  
SYMBOL  
PARAMETER  
MIN  
CONDITIONS  
MAX  
TYP  
UNIT  
Junction to case(DC)  
1.3  
-
-
-
/W  
Rth( j-c)  
Junction to ambient  
60  
-
/W  
Rth( j-a)  
Page 1/6  
http://www.thinkisemi.com/  
© 2006 Thinki Semiconductor Co.,Ltd.  
TYN612T  
®
Limiting values in accordance with the Maximum system(IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
Value  
MIN  
-
UNIT  
600  
V
A
VDRM/VRRM  
180oC conduction angle Tc=105  
IT(RMS)  
RMS on-state current  
-
12  
-
Tj=25oC  
tp=8.3ms  
tp=10ms  
Non repetitive surge  
peak on-statecurrent  
146  
140  
A
A
ITSM  
-
-
Tj=25oC  
180oC conduction angle Tc=105  
-
-
A
IT(AV)  
Average on-state current  
I2t Value for fusing  
I2t  
Tj=25  
98  
50  
A2S  
Tp=10ms  
-
-
Critical rate of rise of  
on-state current  
DI/dt  
A/  
s
IG=2x IGT,tr<=100ns  
F=60HZ Tj=125  
tp=20us  
IGM  
Tj=125  
Tj=25  
A
Peak gate current  
VDRM=VRRM  
4
5
2
-
-
-
IDRM  
IRRM  
A
VDRM=VRRM  
Tj=125  
mA  
Average gate  
power dissipation  
PG(AV)  
Tstg  
Tj  
1
-
Tj=125  
W
Storage junction  
temperature range  
-40  
150  
125  
Operating junction  
Temperature range  
-40  
TJ=25OC unless otherwise stated  
SYMBOL PARAMETER  
Static characteristics  
MAX  
TYP  
CONDITIONS  
MIN  
UNIT  
IGT  
VGT  
VD=12V; RL=33  
0.5  
-
mA  
V
5
1.3  
IL  
IG=1.2IGT  
-
-
-
-
mA  
mA  
30  
15  
-
-
IH  
IT=500mA Gate open  
VGD  
VD=VDRM RL=3.3K Tj=125  
0.2  
V
-
-
V/us  
40  
VD=67%VDRM Gateopen;TJ=125  
dV/dt  
Dynamic Characteristics  
-
-
-
-
V
TJ=25  
1.6  
VTM  
lTM=24A tp=380  
s
Threshold voltage  
Dynamic resistance  
TJ=125  
TJ=125  
V
m
Vto  
Rd  
0.85  
30  
Page 2/6  
http://www.thinkisemi.com/  
© 2006 Thinki Semiconductor Co.,Ltd.  
TYN612T  
®
Description  
Page 3/6  
http://www.thinkisemi.com/  
© 2006 Thinki Semiconductor Co.,Ltd.  
TYN612T  
®
Description  
Page 4/6  
http://www.thinkisemi.com/  
© 2006 Thinki Semiconductor Co.,Ltd.  
TYN612T  
®
Description  
Page 5/6  
http://www.thinkisemi.com/  
© 2006 Thinki Semiconductor Co.,Ltd.  
TYN612T  
®
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 2 g  
TO-220AB  
Page 6/6  
http://www.thinkisemi.com/  
© 2006 Thinki Semiconductor Co.,Ltd.  
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