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AZV831_12

型号：

AZV831_12

描述：

单/双通道，低偏置电流，低电压，轨至轨输入/输出[ Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail Input/Output ]

品牌：

BCDSEMI[ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]

页数：

27 页

PDF大小：

823 K

下载PDF手册
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
AZV831/2  
Input/Output CMOS Operational Amplifiers MOS Operational  
General Description  
Features  
The AZV831/AZV832 is single/dual channels  
rail-to-rail input and output amplifier, which provides  
a wide input common-mode voltage range and output  
voltage swing capability for maximum signal swings  
in low supply voltage applications. The device is  
fully specified to operate from 1.6V to 5.0V single  
supply, or ±0.8V and ±2.5V dual supply applications.  
It features very low supply current dissipation 70µA  
per channel, which is well suitable for today's  
low-voltage and/or portable systems.  
•
•
•
•
Single Supply Voltage Range: 1.6V to 5.5V  
Ultra-low Input Bias Current: 1pA (Typ.)  
Offset Voltage: 0.5mV (Typ.), 2.5mV (Max.)  
Rail-to-Rail Input  
V
CM: 300mV beyond Rails @ VCC=5V  
Rail-to-Rail Output Swing:  
10kΩ Load: 4mV from Rail  
1kΩ Load: 25mV from Rail  
Supply Current: 70µA/Amplifier  
Unity Gain Stable  
•
•
Gain Bandwidth Product: 1.0MHz  
Slew Rate: 0.45V/µs @ VCC=5.0V  
Operation Ambient Temperature Range: -40ºC  
to 85ºC  
The AZV831/AZV832 features optimal performance  
in very low bias current of 1pA, which enables the IC  
to be used for integrators, photodiode amplifiers, and  
piezoelectric sensors etc. The device has typical  
0.5mV input offset voltage and provides 1MHz  
bandwidth.  
•
•
The AZV831/AZV832 adopts the latest packaging  
technology to meet the most demanding  
space-constraint applications. The AZV831 is  
available in standard SOT-23-5 and SC-70-5  
packages. The AZV832 is offered in the traditional  
MSOP-8 and SOIC-8 packages.  
Applications  
•
•
•
•
Sensors  
Photodiode Amplification  
Battery-Powered Instrumentation  
Pulse Blood Oximeter, Glucose Meter  
SC-70-5  
SOT-23-5  
SOIC-8  
MSOP-8  
Figure 1. Package Types of AZV831/AZV832  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
1
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
AZV831/2  
Input/Output CMOS Operational Amplifiers  
Pin Configuration  
KS/K Package  
（SC-70-5/SOT-23-5）  
OUTPUT  
VEE  
1
2
3
5
4
VCC  
IN-  
IN+  
AZV831  
M/MM Package  
(SOIC-8/MSOP-8)  
8
7
1
2
3
4
OUTPUT 1  
IN 1-  
VCC  
OUTPUT 2  
IN 2-  
6
5
IN 1+  
VEE  
IN 2+  
AZV832  
Figure 2. Pin Configuration of AZV831/2 (Top View)  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
2
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
AZV831/2  
Input/Output CMOS Operational Amplifiers  
Function Block Diagram  
5
VCC  
+
-
Class  
AB  
4
1
IN-  
OUTPUT  
Control  
3
IN+  
+
-
2
VEE  
VCC  
For AZV831  
8
+
-
Class  
AB  
Control  
2,6  
1,7  
OUTPUT1/  
OUTPUT2  
IN1-/IN2-  
3,5  
IN1+/IN2+  
+
-
4
VEE  
For AZV832/Amplifier  
Figure 3. Functional Block Diagram of AZV831/2  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
3
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
AZV831/2  
Input/Output CMOS Operational Amplifiers  
Ordering Information  
AZV831/2  
-
Circuit Type  
Package  
G1: Green  
Blank: Tube  
KS: SC-70-5 (AZV831)  
K: SOT-23-5 (AZV831)  
M: SOIC-8 (AZV832)  
MM: MSOP-8 (AZV832)  
TR: Tape & Reel  
Temperature  
Packing  
Type  
Package  
Part Number  
Marking ID  
Range  
SC-70-5  
AZV831KSTR-G1  
AZV831KTR-G1  
AZV832M-G1  
AZV832MTR-G1  
AZV832MM-G1  
AZV832MMTR-G1  
L3  
Tape & Reel  
Tape & Reel  
Tube  
-40 to 85°C  
-40 to 85°C  
SOT-23-5  
G4D  
832M-G1  
832M-G1  
832MM-G1  
832MM-G1  
SOIC-8  
-40 to 85°C  
-40 to 85°C  
Tape & Reel  
Tube  
MSOP-8  
Tape & Reel  
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant  
and green.  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
4
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifiers  
AZV831/2  
Absolute Maximum Ratings (Note 1)  
Parameter  
Symbol  
VCC  
Value  
Unit  
V
Power Supply Voltage  
Differential Input Voltage  
Input Voltage  
6.0  
6.0  
VID  
V
VIN  
-0.3 to VCC+0.5  
150  
V
Operating Junction Temperature  
TJ  
ºC  
SC-70-5  
270  
220  
150  
200  
SOT-23-5  
SOIC-8  
Thermal Resistance  
(Junction to Ambient)  
θJA  
ºC /W  
MSOP-8  
Storage Temperature Range  
TSTG  
-65 to 150  
ºC  
Lead Temperature (Soldering,10 Seconds)  
ESD (Human Body Model)  
TLEAD  
260  
4000  
300  
ºC  
V
ESD (Machine Model)  
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to  
the device. These are stress ratings only, and functional operation of the device at these or any other conditions  
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute  
Maximum Ratings” for extended periods may affect device reliability.  
Recommended Operating Conditions  
Parameter  
Symbol  
Min  
Max  
Unit  
Supply Voltage  
VCC  
1.6  
5.5  
V
Operation Ambient Temperature  
Range  
TA  
-40  
85  
ºC  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
5
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifiers  
AZV831/2  
1.6V DC Electrical Characteristics  
VCC=1.6V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted.  
Parameter  
Symbol  
VOS  
Conditions  
Min Typ Max Unit  
Input Offset Voltage  
0.5 2.5 mV  
Input Bias Current  
IB  
1.0  
1.0  
pA  
pA  
V
Input Offset Current  
IOS  
Input Common-mode Voltage Range  
Common-mode Rejection Ratio  
VCM  
-0.2  
55  
1.8  
CMRR VCM=-0.2V to 1.8V  
75  
dB  
RL=10kΩ to VCC/2,  
GV  
Large Signal Voltage Gain  
Input Offset Voltage Drift  
90 110  
2.0  
dB  
VOUT=0.2V to 1.4V  
∆VOS/∆T  
µV/ °C  
RL=1kΩ to VCC/2  
VOL/VOH  
30 50  
Output Voltage Swing from Rail  
mV  
mA  
RL=10kΩ to VCC/2  
3
10  
8.5  
9
15  
Sink  
Output Current  
Source  
ISINK  
VOUT=VCC  
8
5
ISOURCE VOUT=0V  
Closed-loop Output Impedance  
Power Supply Rejection Ratio  
Supply Current (Per Amplifier)  
ZOUT  
f=10kHz, AV=1  
Ω
PSRR VCC=1.6V to 5.0V  
66  
80  
dB  
ICC  
VOUT=VCC/2, IOUT=0  
70 90 µA  
1.6V AC Electrical Characteristics  
VCC=1.6V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted.  
Parameter  
Symbol  
Conditions  
Min Typ Max Unit  
Gain Bandwidth Product  
GBP  
RL=100kΩ  
1.0  
0.32  
67  
MHz  
V/µs  
1V Step,  
CL=100pF, RL=10kΩ  
Slew Rate (Note 2)  
Phase Margin  
SR  
φM  
RL=100kΩ  
Degrees  
dB  
f=1kHz, AV=1, VIN=1Vpp  
RL=10kΩ, CL=100pF  
Total Harmonic Distortion+Noise THD+N  
Voltage Noise Density en  
-70  
27  
f=1kHz  
nV/ Hz  
Note 2: Number specified is the positive slew rate.  
.
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
6
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifiers  
AZV831/2  
1.8V DC Electrical Characteristics  
VCC=1.8V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted.  
Parameter  
Symbol  
VOS  
Conditions  
Min Typ Max Unit  
Input Offset Voltage  
0.5 2.5 mV  
Input Bias Current  
IB  
1.0  
1.0  
pA  
pA  
V
Input Offset Current  
IOS  
Input Common-mode Voltage Range  
Common-mode Rejection Ratio  
VCM  
-0.2  
55  
2.0  
CMRR VCM=-0.2V to 2.0V  
75  
dB  
RL=10kΩ to VCC/2,  
GV  
Large Signal Voltage Gain  
Input Offset Voltage Drift  
90 112  
2.0  
dB  
VOUT=0.2V to 1.6V  
∆VOS/∆T  
µV/ °C  
RL=1kΩ to VCC/2  
VOL/VOH  
25 50  
Output Voltage Swing from Rail  
mV  
mA  
RL=10kΩ to VCC/2  
3
15  
Sink  
Output Current  
Source  
ISINK  
ISOURCE VOUT=0V  
ZOUT f=10kHz  
PSRR VCC=1.6V to 5.0V  
ICC VOUT=VCC/2, IOUT=0  
VOUT=VCC  
12  
10  
16  
14  
9
Closed-loop Output Impedance  
Power Supply Rejection Ratio  
Supply Current (Per Amplifier)  
Ω
66  
80  
dB  
70 90 µA  
1.8V AC Electrical Characteristics  
VCC=1.8V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted.  
Parameter  
Symbol  
Conditions  
Min Typ Max Unit  
Gain Bandwidth Product  
GBP  
RL=100kΩ  
1.0  
0.34  
67  
MHz  
V/µs  
1V Step,  
CL=100pF, RL=10kΩ  
Slew Rate (Note 2)  
Phase Margin  
SR  
φM  
RL=100kΩ  
Degrees  
dB  
f=1kHz, AV=1, VIN=1Vpp  
RL=10kΩ, CL=100pF  
Total Harmonic Distortion+Noise THD+N  
Voltage Noise Density en  
-70  
27  
f=1kHz  
nV/ Hz  
Note 2: Number specified is the positive slew rate.  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
7
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifiers  
AZV831/2  
3.0V DC Electrical Characteristics  
VCC=3.0V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted.  
Parameter  
Symbol  
VOS  
Conditions  
Min Typ Max Unit  
Input Offset Voltage  
Input Bias Current  
0.5 2.5 mV  
IB  
1.0  
1.0  
pA  
pA  
V
Input Offset Current  
Input Common-mode Voltage Range  
IOS  
VCM  
-0.3  
62  
3.3  
VCM=-0.3V to 1.8V  
VCM=-0.3V to 3.3V  
80  
75  
Common-mode Rejection Ratio  
Large Signal Voltage Gain  
CMRR  
GV  
dB  
dB  
58  
RL=1kΩ to VCC/2 ,  
VOUT=0.2V to 2.8V  
RL=10kΩ to VCC/2,  
VOUT=0.1V to 2.9V  
90 110  
95 115  
2.0  
Input Offset Voltage Drift  
∆VOS/∆T  
VOL/VOH  
ISINK  
µV/ °C  
RL=1kΩ to VCC/2  
RL=10kΩ to VCC/2  
VOUT=VCC  
20 50  
Output Voltage Swing from Rail  
mV  
3
15  
Sink  
Output Current  
Source  
50  
50  
60  
65  
9
mA  
ISOURCE VOUT=0V  
ZOUT f=10kHz  
PSRR VCC=1.6V to 5.0V  
ICC VOUT=VCC/2, IOUT=0  
Closed-loop Output Impedance  
Power Supply Rejection Ratio  
Supply Current (Per Amplifier)  
Ω
66  
80  
dB  
70 90 µA  
3.0V AC Electrical Characteristics  
VCC=3.0V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted.  
Parameter  
Symbol  
Conditions  
Min Typ Max Unit  
Gain Bandwidth Product  
GBP  
RL=100kΩ  
1.0  
0.40  
67  
MHz  
V/µs  
G=1, 2V Step,  
CL=100pF, RL=10kΩ  
Slew Rate (Note 2)  
Phase Margin  
SR  
φM  
RL=100kΩ  
Degrees  
dB  
f=1kHz, G=1, VIN=1Vpp  
RL=10kΩ, CL=100pF  
Total Harmonic Distortion+Noise THD+N  
Voltage Noise Density en  
-70  
27  
f=1kHz  
nV/ Hz  
Note 2: Number specified is the positive slew rate.  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
8
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifiers  
AZV831/2  
5.0V DC Electrical Characteristics  
VCC=5.0V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted.  
Parameter  
Symbol  
VOS  
Conditions  
Min Typ Max Unit  
Input Offset Voltage  
Input Bias Current  
0.5 2.5 mV  
IB  
1.0  
1.0  
pA  
pA  
V
Input Offset Current  
Input Common-mode Voltage Range  
IOS  
VCM  
-0.3  
70  
5.3  
V
CM=-0.3V to 3.8V  
85  
90  
Common-mode Rejection Ratio  
Large Signal Voltage Gain  
CMRR  
GV  
dB  
dB  
VCM=-0.3V to 5.3V  
65  
RL=1kΩ to VCC/2,  
VOUT=0.2V to 4.8V  
RL=10kΩ to VCC/2,  
VOUT=0.05V to 4.95V  
80  
85  
92  
98  
Input Offset Voltage Drift  
∆VOS/∆T  
VOL/VOH  
ISINK  
2.0  
25  
4
µV/°C  
RL=1kΩ to VCC/2  
RL=10kΩ to VCC/2  
VOUT=VCC  
50  
15  
Output Voltage Swing from Rail  
mV  
Sink  
Output Current  
Source  
100 150  
110 185  
9
mA  
ISOURCE VOUT=0V  
f=1kHz, AV=1  
PSRR VCC=1.6V to 5.0V  
ICC VOUT=VCC/2, IOUT=0  
Closed-loop Output Impedance  
Power Supply Rejection Ratio  
Supply Current (Per Amplifier)  
Ω
66  
80  
70  
dB  
90 µA  
5V AC Electrical Characteristics  
VCC=5.0V, VEE=0, VOUT=VCC/2, VCM=VCC/2, TA=25°C, unless otherwise noted.  
Parameter  
Symbol  
Conditions  
Min Typ Max Unit  
Gain Bandwidth Product  
GBP  
RL=100kΩ  
1.0  
0.45  
67  
MHz  
V/µs  
2V Step,  
CL=100pF, RL=10kΩ  
Slew Rate (Note 2)  
Phase Margin  
SR  
φM  
RL=100kΩ  
Degrees  
dB  
f=1kHz, AV=1, VIN=1VPP  
RL=10kΩ,CL=100pF  
THD+N  
THD+N  
en  
-70  
27  
Voltage Noise Density  
f=1kHz  
nV/ Hz  
Note 2: Number specified is the positive slew rate.  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
9
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifiers  
AZV831/2  
Typical Performance Characteristics  
250  
200  
150  
100  
50  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
No Load  
OUT=1/2VCC  
V
Dual Amplifiers  
TA=85OC  
VCC=1.8V  
VCC=1.6V  
TA=25OC  
TA=-40OC  
VCC=5.0V  
VCC=3.0V  
Dual Amplifiers  
VOUT=VCC/2  
IOUT=0mA  
0
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
Temperature (OC)  
Supply Voltage (V)  
Figure 4. Supply Current vs. Temperature  
Figure 5. Supply Current vs. Supply Voltage  
1
0
1
VCC=1.6V  
VCC=1.8V  
0
-1  
-2  
-3  
-4  
-5  
-6  
-1  
-2  
-3  
-4  
-5  
-6  
TA=-40oC  
TA=25oC  
TA=85oC  
TA=-40oC  
TA=25oC  
TA=85oC  
-0.5  
0.0  
0.5  
1.0  
1.5  
2.0  
-0.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
Input Common Mode Voltage (V)  
Input Common Mode Voltage (V)  
Figure 6. Input Offset Voltage vs.  
Input Common Mode Voltage  
Figure 7. Input Offset Voltage vs.  
Input Common Mode Voltage  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
10  
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifiers  
AZV831/2  
Typical Performance Characteristics (Continued)  
1
4
VCC=3.0V  
VCC=5.0V  
0
-1  
-2  
-3  
-4  
-5  
-6  
2
0
-2  
-4  
-6  
TA=-40oC  
TA=25oC  
TA=85oC  
TA=-40oC  
TA=25oC  
TA=85oC  
0
1
2
3
4
0
1
2
3
4
5
6
Input Common Mode Voltage (V)  
Input Common Mode Voltage (V)  
Figure 8. Input Offset Voltage vs.  
Input Common Mode Voltage  
Figure 9. Input Offset Voltage vs.  
Input Common Mode Voltage  
1000  
100  
10  
1000  
100  
10  
VCC=1.6V, VEE=0V  
VCC=1.8V, VEE=0V  
Sink Current  
Source Current  
Sink Current  
Source Current  
1
1
0.1  
1
10  
0.1  
1
10  
Output Current (mA)  
Output Current (mA)  
Figure 10. Output Voltage vs. Output Current  
Figure 11. Output Voltage vs. Output Current  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
11  
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifiers  
AZV831/2  
Typical Performance Characteristics (Continued)  
10000  
VCC=3.0V, VEE=0V  
VCC=5.0V, VEE=0V  
1000  
100  
10  
1000  
100  
10  
Sink Current  
Sink Current  
Source Current  
Source Current  
1
0.01  
1
0.01  
0.1  
1
10  
0.1  
1
10  
100  
Output Current (mA)  
Output Current (mA)  
Figure 12. Output Voltage vs. Output Current  
Figure 13. Output Voltage vs. Output Current  
160  
140  
120  
100  
80  
200  
180  
VCC=1.6V  
VCC=1.8V  
VCC=3.0V  
VCC=5.0V  
VEE=0V  
VOUT short to VCC  
VEE=0V  
OUT short to VEE  
V
160  
140  
120  
100  
80  
VCC=1.6V  
VCC=1.8V  
VCC=3.0V  
VCC=5.0V  
60  
60  
40  
40  
20  
20  
0
-40  
0
-40  
-20  
0
20  
40  
60  
80  
100  
-20  
0
20  
40  
60  
80  
100  
Temperature (oC)  
Temperature (oC)  
Figure 14. Output Short Circuit Current vs. Temperature Figure 15. Output Short Circuit Current vs. Temperature  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
12  
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifiers  
AZV831/2  
Typical Performance Characteristics (Continued)  
160  
140  
120  
100  
80  
120  
100  
80  
60  
40  
20  
0
VEE=0V  
VOUT short to VEE  
VEE=0V  
VOUT short to VCC  
60  
40  
20  
0
1
2
3
4
5
1
2
3
4
5
Supply Voltage (V)  
Supply Voltage (V)  
Figure 16. Output Short Circuit Current  
vs. Supply Voltage  
Figure 17. Output Short Circuit Current  
vs. Supply Voltage  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
27  
26  
25  
24  
23  
22  
21  
20  
RL=10kΩ  
RL=1kΩ  
Positive Swing  
Negative Swing  
Positive Swing  
Negative Swing  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
Dual Supply Voltage (V)  
Dual Supply Voltage (V)  
Figure 18. Output Voltage Swing vs. Supply Voltage  
Figure 19. Output Voltage Swing vs. Supply Voltage  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
13  
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
AZV831/2  
Input/Output CMOS Operational Amplifiers  
Typical Performance Characteristics (Continued)  
48  
44  
40  
36  
32  
28  
24  
20  
16  
12  
10  
9
8
7
6
5
4
3
2
1
0
VCC=0.8V,VEE=-0.8V  
VCC=2.5V,VEE=-2.5V  
VCC=0.8V,VEE=-0.8V  
VCC=2.5V,VEE=-2.5V  
VCC=0.9V,VEE=-0.9V  
VCC=1.5V,VEE=-1.5V  
VCC=0.9V,VEE=-0.9V  
VCC=1.5V,VEE=-1.5V  
RL=1kΩ  
RL=10kΩ  
Positive Swing  
Negative Swing  
Negative Swing  
Positive Swing  
-40  
-20  
0
20  
40  
60  
80  
100  
-40  
-20  
0
20  
40  
60  
80  
100  
Temperature (oC)  
Temperature (oC)  
Figure 20. Output Voltage Swing vs. Temperature  
Figure 21. Output Voltage Swing vs. Temperature  
70  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
70  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
RL=100kΩ  
RL=10kΩ  
RL=1kΩ  
RL=8Ω  
CL=100pF  
CL=200pF  
CL=300pF  
VCC=0.8V, VEE=-0.8V  
RL=100kΩ  
VCC=0.8V, VEE=-0.8V  
-10  
-20  
-10  
-20  
10k  
100k  
1M  
10k  
100k  
1M  
Frequency (Hz)  
Frequency (Hz)  
Figure 22. Gain and Phase vs. Frequency  
with Resistive Load  
Figure 23. Gain and Phase vs. Frequency  
with Capacitive Load  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
14  
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifiers  
AZV831/2  
Typical Performance Characteristics (Continued)  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
RL=100kΩ  
RL=10kΩ  
RL=1kΩ  
CL=100pF  
CL=200pF  
CL=300pF  
RL=8Ω  
VCC=0.8V, VEE=-0.8V  
RL=10kΩ  
VCC=0.9V, VEE=-0.9V  
-10  
-20  
-10  
-20  
10  
10k  
100k  
1M  
10k  
100k  
1M  
Frequency (Hz)  
Frequency (Hz)  
Figure 24. Gain and Phase vs. Frequency  
with Capacitive Load  
Figure 25. Gain and Phase vs. Frequency  
with Resistive Load  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
70  
60  
50  
40  
30  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
20  
CL=100pF  
CL=200pF  
CL=300pF  
CL=100pF  
CL=200pF  
CL=300pF  
10  
0
VCC=0.9V, VEE=-0.9V  
RL=10kΩ  
VCC=0.9V, VEE=-0.9V  
RL=100kΩ  
-10  
-20  
-10  
-20  
10k  
100k  
1M  
10k  
100k  
1M  
Frequency (Hz)  
Frequency (Hz)  
Figure 26. Gain and Phase vs. Frequency  
with Capacitive Load  
Figure 27. Gain and Phase vs. Frequency  
with Capacitive Load  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
15  
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifiers  
AZV831/2  
Typical Performance Characteristics (Continued)  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
RL=100kΩ  
RL=10kΩ  
RL=1kΩ  
RL=8Ω  
CL=100pF  
CL=200pF  
CL=300pF  
VCC=1.5V, VEE=-1.5V  
RL=100kΩ  
VCC=1.5V, VEE=-1.5V  
-10  
-20  
-10  
-20  
10  
10k  
100k  
1M  
10k  
100k  
1M  
Frequency (Hz)  
Frequency (Hz)  
Figure 28. Gain and Phase vs. Frequency  
with Resistive Load  
Figure 29. Gain and Phase vs. Frequency  
with Capacitive Load  
70  
60  
50  
40  
30  
100  
70  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
90  
80  
70  
60  
50  
40  
30  
20  
10  
60  
50  
40  
30  
20  
10  
0
20  
RL=100kΩ  
RL=10kΩ  
RL=1kΩ  
RL=8Ω  
CL=100pF  
CL=200pF  
CL=300pF  
10  
0
VCC=1.5V, VEE=-1.5V  
RL=10kΩ  
VCC=2.5V, VEE=-2.5V  
-10  
-20  
-10  
-20  
10k  
100k  
1M  
10k  
100k  
1M  
Frequency (Hz)  
Frequency (Hz)  
Figure 30. Gain and Phase vs. Frequency  
with Capacitive Load  
Figure 31. Gain and Phase vs. Frequency  
with Resistive Load  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
16  
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifiers  
AZV831/2  
Typical Performance Characteristics (Continued)  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
CL=100pF  
CL=200pF  
CL=300pF  
CL=100pF  
CL=200pF  
CL=300pF  
VCC=2.5V, VEE=-2.5V  
RL=100kΩ  
VCC=2.5V, VEE=-2.5V  
RL=10kΩ  
-10  
-20  
-10  
-20  
10  
10k  
100k  
1M  
10k  
100k  
1M  
Frequency (Hz)  
Frequency (Hz)  
Figure 32. Gain and Phase vs. Frequency  
with Capacitive Load  
Figure 33. Gain and Phase vs. Frequency  
with Capacitive Load  
1000  
VCC=1.6V to 5V  
EE=0V  
V
10  
1
AV=1, RL=10kΩ, CL=100pF  
VCC=0.8V,VEE=-0.8V  
VCC=0.9V,VEE=-0.9V  
VCC=1.5V,VEE=-1.5V  
VCC=2.5V,VEE=-2.5V  
100  
10  
1
0.1  
0.01  
1E-3  
AV=1  
AV=10  
AV=100  
0.01  
0.1  
1
100  
1k  
10k  
100k  
Output Voltage (V)  
Frequency (Hz)  
Figure 34. Output Impedance vs. Frequency  
Figure 35. THD+N vs. Output Voltage  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
17  
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifiers  
AZV831/2  
Typical Performance Characteristics (Continued)  
1
Bandwidth<10Hz to 22kHz  
VCC=5.0V, VEE=0V, AV=1  
VCC=0.8V, VEE=-0.8V  
VCC=0.9V, VEE=-0.9V  
VCC=1.5V, VEE=-1.5V  
VCC=2.5V, VEE=-2.5V  
0.1  
0.01  
1E-3  
100n  
VOUT=100mVRMS, AV=1, RL=10kΩ, CL=100pF  
10n  
100  
1k  
10k  
100  
1k  
10k  
Frequency (Hz)  
Frequency (Hz)  
Figure 36. THD+N vs. Frequency  
Figure 37. Input Voltage Noise Density  
V
CC=1.6V  
VCC=1.8V  
EE=0V  
VEE=0V  
V
VIN  
VIN  
50mV/div  
50mV/div  
VOUT  
VOUT  
50mV/div  
50mV/div  
CL=100pF, RL=100kΩ, AV=1  
CL=100pF, RL=100kΩ, AV=1  
Time (2µs/div)  
Time (2µs/div)  
Figure 38. Small Signal Pulse Response  
Figure 39. Small Signal Pulse Response  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
18  
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifiers  
AZV831/2  
Typical Performance Characteristics (Continued)  
VCC=5.0V  
VEE=0V  
VCC=3.0V  
VEE=0V  
VIN  
VIN  
50mV/div  
50mV/div  
VOUT  
VOUT  
50mV/div  
50mV/div  
CL=100pF, RL=100kΩ, AV=1  
CL=100pF, RL=100kΩ, AV=1  
Time (2µs/div)  
Time (2µs/div)  
Figure 40. Small Signal Pulse Response  
Figure 41. Small Signal Pulse Response  
VCC=1.8V  
VCC=1.6V  
VEE=0V  
VIN  
VIN  
VEE=0V  
500mV/div  
500mV/div  
VOUT  
VOUT  
500mV/div  
500mV/div  
CL=200pF, RL=100kΩ, AV=1  
CL=200pF, RL=100kΩ, AV=1  
Time (10µs/div)  
Time (10µs/div)  
Figure 42. Large Signal Pulse Response  
Figure 43. Large Signal Pulse Response  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
19  
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifiers  
AZV831/2  
Typical Performance Characteristics (Continued)  
VCC=3.0V  
VCC=5.0V  
VEE=0V  
VEE=0V  
VIN  
VIN  
1V/div  
2V/div  
VOUT  
VOUT  
1V/div  
2V/div  
CL=200pF, RL=100kΩ, AV=1  
CL=200pF, RL=100kΩ, AV=1  
Time (10µs/div)  
Time (10µs/div)  
Figure 44. Large Signal Pulse Response  
Figure 45. Large Signal Pulse Response  
VCC=1.6V  
V
V
CC=1.8V  
EE=0V  
VEE=0V  
VIN  
VIN  
500mV/div  
500mV/div  
VOUT  
VOUT  
500mV/div  
500mV/div  
CL=200pF, RL=10kΩ, AV=1  
Time (10µs/div)  
CL=200pF, RL=10kΩ, AV=1  
Time (10µs/div)  
Figure 46. Large Signal Pulse Response  
Figure 47. Large Signal Pulse Response  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
20  
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
AZV831/2  
Input/Output CMOS Operational Amplifiers  
Typical Performance Characteristics (Continued)  
VCC=3.0V  
VEE=0V  
V
V
CC=5.0V  
EE=0V  
VIN  
VIN  
1V/div  
2V/div  
VOUT  
VOUT  
1V/div  
2V/div  
CL=200pF, RL=10kΩ, AV=1  
CL=200pF, RL=10kΩ, AV=1  
Time (10µs/div)  
Time (10µs/div)  
Figure 48. Large Signal Pulse Response  
Figure 49. Large Signal Pulse Response  
VCC=2.5V  
EE=-2.5V  
VIN  
V
CC=2.5V  
V
VIN  
VIN  
VEE=-2.5V  
1V/div  
50mV/div  
VOUT  
VOUT  
VOUT  
1V/div  
1V/div  
CL=100pF, RL=100kΩ, AV=-50  
f=1kHz, RL=10kΩ, VIN=6VPP, AV=1  
VIN=0 to -100mV  
Time (200µs/div)  
Time (20µs/div)  
Figure 50. No Phase Reversal  
Figure 51. Overload Recovery Time  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
21  
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifiers  
AZV831/2  
Typical Performance Characteristics (Continued)  
VIN  
50mV/div  
V
V
CC=2.5V  
EE=-2.5V  
VOUT  
1V/div  
CL=100pF, RL=100kΩ, AV =-50,  
VIN=0 to -100mV  
Time (20µs/div)  
Figure 52. Overload Recovery Time  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
22  
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
AZV831/2  
Input/Output CMOS Operational Amplifiers  
Mechanical Dimensions  
SC-70-5  
Unit: mm(inch)  
0°  
8°  
2.000(0.079)  
2.200(0.087)  
0.150(0.006)  
0.350(0.014)  
0.200(0.008)  
0.260(0.010)  
0.460(0.018)  
0.525(0.021)REF  
0.650(0.026)TYP  
0.080(0.003)  
0.150(0.006)  
0.000(0.000)  
1.200(0.047)  
1.400(0.055)  
0.100(0.004)  
0.900(0.035)  
0.900(0.035)  
1.000(0.039)  
1.100(0.043)  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
23  
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
AZV831/2  
Input/Output CMOS Operational Amplifiers  
Mechanical Dimensions (Continued)  
SOT-23-5  
Unit: mm(inch)  
2.820(0.111)  
3.020(0.119)  
0.100(0.004)  
0.200(0.008)  
0.200(0.008)  
0.700(0.028)  
REF  
0.300(0.012)  
0.400(0.016)  
0°  
8°  
0.950(0.037)  
TYP  
1.800(0.071)  
2.000(0.079)  
0.000(0.000)  
0.150(0.006)  
0.900(0.035  
)
1.300(0.051)  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
24  
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
AZV831/2  
Input/Output CMOS Operational Amplifiers  
Mechanical Dimensions (Continued)  
SOIC-8  
Unit: mm(inch)  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
25  
Preliminary Datasheet  
Single/Dual Low Bias Current, Low Voltage, Rail-to-Rail  
AZV831/2  
Input/Output CMOS Operational Amplifiers  
Mechanical Dimensions (Continued)  
MSOP-8  
Unit: mm(inch)  
Jul. 2012 Rev. 1. 0  
BCD Semiconductor Manufacturing Limited  
26  
BCD Semiconductor Manufacturing Limited  
http://www.bcdsemi.com  
- Headquarters  
- Wafer Fab  
BCD Semiconductor Manufacturing Limited  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.  
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China  
800 Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-24162266, Fax: +86-21-24162277  
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008  
REGIONAL SALES OFFICE  
Shenzhen Office  
Taiwan Office  
USA Office  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office  
BCD Semiconductor (Taiwan) Company Limited  
BCD Semiconductor Corp.  
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,  
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,  
30920 Huntwood Ave. Hayward,  
China  
Taiwan  
Tel: +886-2-2656 2808  
CA 94544, USA  
Tel: +86-755-8826 7951  
Tel : +1-510-324-2988  
Fax: +86-755-8826 7865  
Fax: +886-2-2656 2806  
Fax: +1-510-324-2788  
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