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IXXK100N60C3H1

型号：

IXXK100N60C3H1

描述：

XPTTM 600V GenX3TM W /二极管[ XPTTM 600V GenX3TM w/ Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

248 K

下载PDF手册
Preliminary Technical Information  
XPTTM 600V  
IXXK100N60C3H1  
IXXX100N60C3H1  
VCES = 600V  
IC90 = 100A  
VCE(sat) ≤ 2.20V  
tfi(typ) = 75ns  
GenX3TM w/ Diode  
Extreme Light Punch Through  
IGBT for 20-60kHz Switching  
TO-264 (IXXK)  
Symbol  
Test Conditions  
Maximum Ratings  
G
C
E
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
Tab  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247 (IXXX)  
IC25  
ILRMS  
IC90  
TC= 25°C ( Chip Capability )  
Terminal Current Limit  
TC = 90°C  
170  
120  
100  
65  
A
A
A
A
IF110  
TC = 110°C  
ICM  
TC = 25°C, 1ms  
340  
A
G
C
Tab  
IA  
EAS  
TC = 25°C  
TC = 25°C  
50  
A
E
600  
mJ  
G = Gate  
C = Collector  
E
= Emitter  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 2Ω  
Clamped Inductive Load  
ICM = 200  
A
μs  
W
Tab = Collector  
(RBSOA)  
@VCE ≤ VCES  
tsc  
VGE= 15V, VCE = 360V, TJ = 150°C  
10  
(SCSOA)  
RG = 10Ω, Non Repetitive  
Features  
PC  
TC = 25°C  
695  
z Optimized for 20-60kHz Switching  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
z
Square RBSOA  
Avalanche Rated  
Short Circuit Capability  
Anti-Parallel Ultra Fast Diode  
z
z
-55 ... +150  
z
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z
High Current Handling Capability  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120 /4.5..27  
Advantages  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z
High Power Density  
Low Gate Drive Requirement  
z
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
z
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
z
5.5  
z
z
50 μA  
4 mA  
z
TJ = 125°C  
TJ = 150°C  
z
z
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z
Lamp Ballasts  
VCE(sat)  
IC = 70A, VGE = 15V, Note 1  
1.68  
1.97  
2.20  
V
V
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100283A(01/11)  
IXXK100N60C3H1  
IXXX100N60C3H1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-264 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
22  
40  
S
Cies  
Coes  
Cres  
4810  
455  
80  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg  
Qge  
Qgc  
150  
34  
nC  
nC  
nC  
IC = 70A, VGE = 15V, VCE = 0.5 • VCES  
60  
td(on)  
tri  
Eon  
td(off)  
tfi  
30  
70  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 70A, VGE = 15V  
2.00  
90  
Terminals:  
1
= Gate  
2,4 = Collector  
Emitter  
VCE = 360V, RG = 2Ω  
3
=
75  
Note 2  
Eof  
0.95  
1.40 mJ  
f
td(on)  
tri  
30  
65  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 70A, VGE = 15V  
Eon  
td(off)  
tfi  
3.00  
105  
115  
1.40  
mJ  
ns  
VCE = 360V, RG = 2Ω  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
0.15  
PLUS247TM Outline  
Reverse Diode (FRED)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 60A, VGE = 0V, Note 1  
1.6  
1.4  
2.0  
1.8  
V
V
TJ = 150°C  
TJ = 100°C  
IRM  
trr  
8.3  
A
IF = 60A, VGE = 0V,  
Terminals: 1 - Gate  
2 - Collector  
-diF/dt = 200A/μs, VR = 300V  
140  
ns  
3 - Emitter  
RthJC  
0.30 °C/W  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
e
L
L1  
5.45 BSC  
19.81 20.32  
3.81  
.215 BSC  
.780 .800  
.150 .170  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXXK100N60C3H1  
IXXX100N60C3H1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
140  
120  
100  
80  
VGE = 15V  
14V  
VGE = 15V  
13V  
13V  
12V  
11V  
12V  
10V  
9V  
11V  
60  
10V  
9V  
40  
8V  
20  
8V  
7V  
7V  
6V  
0
0
0
0
8
0.5  
1
1.5  
2
2.5  
3
3.5  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
140  
120  
100  
80  
VGE = 15V  
13V  
VGE = 15V  
12V  
11V  
I C = 140A  
I C = 70A  
I C = 35A  
10V  
9V  
60  
40  
8V  
20  
7V  
6V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
180  
160  
140  
120  
100  
80  
TJ = 25ºC  
TJ = 150ºC  
I C = 140A  
25ºC  
- 40ºC  
60  
70A  
40  
20  
35A  
0
9
10  
11  
12  
13  
14  
15  
4
5
6
7
8
9
10  
11  
VGE - Volts  
VGE - Volts  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXXK100N60C3H1  
IXXX100N60C3H1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 70A  
I G = 10mA  
25ºC  
150ºC  
6
4
2
0
0
0
1
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
0
20  
40  
60  
80  
100  
120  
140  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
220  
200  
180  
160  
140  
120  
100  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
60  
TJ = 150ºC  
RG = 2  
C
res  
40  
Ω
dv / dt < 10V / ns  
= 1 MHz  
5
f
20  
0
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Forward-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance  
1000  
100  
10  
1
VCE(sat) Limit  
0.1  
25µs  
100µs  
1ms  
0.01  
0.001  
1
TJ = 150ºC  
10ms  
TC = 25ºC  
DC  
Single Pulse  
0.1  
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXK100N60C3H1  
IXXX100N60C3H1  
Fig. 14. Inductive Switching Energy Loss vs.  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
Collector Current  
2.5  
2
5
4
3
2
1
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
7
6
5
4
3
2
E
E
on - - - -  
VGE = 15V  
off  
RG = 2  
E
E
on - - - -  
off  
TJ = 150ºC , VGE = 15V  
Ω ,  
VCE = 360V  
VCE = 360V  
TJ = 150ºC  
I C = 100A  
1.5  
1
TJ = 25ºC  
0.5  
0
I C = 50A  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
20  
30  
40  
50  
60  
70  
80  
90  
100  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
180  
160  
140  
120  
100  
80  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
80  
2.5  
2.0  
1.5  
1.0  
0.5  
5
E
E
on - - - -  
VGE = 15V  
t f i  
td(off)  
- - - -  
off  
RG = 2  
Ω ,  
TJ = 150ºC, VGE = 15V  
I C = 100A  
VCE = 360V  
VCE = 360V  
4
3
2
1
I C = 50A  
I C = 50A  
I C = 100A  
25  
50  
75  
100  
125  
150  
2
3
4
5
6
7
8
9
10 11  
12 13  
14 15  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
160  
150  
140  
130  
120  
110  
100  
90  
160  
140  
120  
100  
80  
200  
175  
150  
125  
100  
75  
180  
160  
140  
120  
100  
80  
t f i  
td(on)  
- - - -  
t f i  
td(off)  
- - - -  
RG = 2  
,
VGE = 15V  
Ω
RG = 2  
,
VGE = 15V  
Ω
VCE = 360V  
VCE = 360V  
TJ = 150ºC  
I C = 100A  
TJ = 25ºC  
I C = 50A  
80  
70  
60  
60  
50  
60  
25  
50  
75  
100  
125  
150  
20  
30  
40  
50  
60  
IC - Amperes  
70  
80  
90  
100  
TJ - Degrees Centigrade  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXXK100N60C3H1  
IXXX100N60C3H1  
Fig. 20. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
140  
120  
100  
80  
38  
36  
34  
32  
30  
28  
26  
24  
180  
160  
140  
120  
100  
80  
84  
76  
68  
60  
52  
44  
36  
28  
20  
tr i  
td(on)  
- - - -  
tr i  
td(on) - - - -  
RG = 2  
, VGE = 15V  
Ω
TJ = 150ºC, VGE = 15V  
VCE = 360V  
VCE = 360V  
TJ = 25ºC  
I C = 100A  
TJ = 150ºC  
60  
I C = 50A  
40  
60  
20  
40  
0
20  
20  
30  
40  
50  
60  
70  
80  
90  
100  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
IC - Amperes  
RG - Ohms  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
180  
160  
140  
120  
100  
80  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
tr i  
td(on) - - - -  
RG = 2  
, VGE = 15V  
Ω
VCE = 360V  
I C = 100A  
60  
I C = 50A  
40  
20  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXK100N60C3H1  
IXXX100N60C3H1  
Fig. 23. Reverse Recovery Charge Qr  
Versus -diF/dt  
Fig. 24. Peak Reverse Current IRM  
Versus -diF/dt  
Fig. 22. Forward Current IF Versus VF  
Fig. 25. Dynamic Parameters Qr, IRM  
Versus TVJ  
Fig. 26. Recovery Time trr Versus  
-diF/dt  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width ]  
Seconds  
27.  
Fig. 26 Maximum transient thermal impedance junction to case (for diode)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXX_100N60C3(7D)9-30-10-A  
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