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8PT08AI-S

型号：

8PT08AI-S

描述：

敏感和标准的SCR ， 8A[ Sensitive and Standard SCRs, 8A ]

品牌：

NELLSEMI[ NELL SEMICONDUCTOR CO., LTD ]

页数：

7 页

PDF大小：

1084 K

下载PDF手册
RoHS  
RoHS  
8PT Series  
SEMICONDUCTOR  
Sensitive and Standard SCRs, 8A  
Main Features  
2
2
Symbol  
Value  
8
Unit  
IT(RMS)  
A
2
1
1
3
2
VDRM/VRRM  
IGT  
V
600 to 1000  
0.2 to 15  
3
TO-251 (I-PAK)  
TO-252 (D-PAK)  
mA  
(8PTxxF)  
(8PTxxG)  
2
DESCRIPTION  
Available either in sensitive or standard gate  
triggering levels, the 8A SCR series is suitable  
to fit all modes of control found in applications  
such as overvoltage crowbar protection, motor  
control circuits in power tools and kitchen aids,  
inrush current limiting circuits, capacitive  
discharge ignition and voltage regulation circuits.  
1
2
3
1
2
3
TO-220AB (Non-lnsulated)  
TO-220AB (lnsulated)  
(8PTxxAI)  
(8PTxxA)  
2
(A2)  
Available in through-hole or surface-mount  
packages, they provide an optimized performance  
in a limited space.  
(G)3  
1(A1)  
ABSOLUTE MAXIMUM RATINGS  
TEST CONDITIONS  
VALUE  
UNIT  
PARAMETER  
SYMBOL  
Tc=110°C  
Tc=100°C  
Tc=110°C  
Tc=100°C  
t = 20 ms  
TO-251/TO-252/TO-220AB  
RMS on-state current full sine wave  
(180° conduction angle )  
IT(RMS)  
8
A
TO-220AB insulated  
TO-251/TO-252/TO-220AB  
Average on-state current  
(180° conduction angle)  
IT(AV)  
5.1  
A
TO-220AB insulated  
F =50 Hz  
95  
100  
45  
Non repetitive surge peak on-state  
ITSM  
A
current (full cycle, T initial = 25°C)  
j
t = 16.7 ms  
F =60 Hz  
I2t Value for fusing  
A2s  
A/µs  
I2t  
tp = 10 ms  
Critical rate of rise of on-state current  
IG = 2xlGT, tr≤100ns  
dI/dt  
IGM  
F = 60 Hz  
Tj = 125ºC  
Tj = 125ºC  
50  
4
Peak gate current  
Tp = 20 µs  
A
PG(AV)  
Tstg  
Average gate power dissipation  
Storage temperature range  
Tj =125ºC  
1
W
- 40 to + 150  
ºC  
Tj  
Operating junction temperature range  
- 40 to + 125  
www.nellsemi.com  
Page 1 of 7  
RoHS  
RoHS  
8PT Series  
SEMICONDUCTOR  
STANDARD ELECTRICAL SPECIFICATIONS  
(TJ = 25 ºC, unless otherwise specified)  
8PTxxxx  
SYMBOL  
Unit  
TEST CONDITIONS  
T
-
2
Min.  
Max.  
Max.  
0.5  
5
IGT  
mA  
15  
VD = 12 V, RL = 30Ω  
VGT  
V
V
1.3  
0.2  
VGD  
IH  
VD = VDRM, RL = 3.3KΩ  
IT = 100 mA, gate open  
IG = 1.2 IGT  
Tj = 125°C  
Min.  
Max.  
30  
70  
mA  
mA  
25  
30  
50  
Max.  
IL  
dV/dt  
VTM  
VD = 67% VDRM gate open  
,
Tj = 125°C  
Tj = 25°C  
Min.  
Max.  
Max.  
150  
V/µs  
V
1.6  
ITM = 16A, tP = 380 µs  
Vto  
Rd  
0.85  
V
Threshold voltage  
Dynamic resistance  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
mΩ  
µA  
46  
5
Max.  
Max.  
IDRM  
IRRM  
VDRM = VRRM  
mA  
1
(T  
SENSITIVE ELECTRICAL CHARACTERISTICS  
j = 25 ºC, unless otherwise specified)  
SYMBOL  
Unit  
TEST CONDITIONS  
8PTxxxx-S  
IGT  
Max.  
Max.  
Min.  
200  
0.8  
µA  
VD = 12 V, RL = 140Ω  
VGT  
V
V
VGD  
VD = VDRM, RL = 3.3KΩ, RGK=220Ω  
IRG = 10 µA  
Tj = 125°C  
0.1  
8
VRG  
IH  
V
Min.  
5
IT = 50 mA, RGK = 1 KΩ  
IG = 1 mA, RGK = 1 KΩ  
Max.  
mA  
mA  
IL  
Max.  
Min.  
Max.  
6
Tj = 125°C  
Tj = 25°C  
dV/dt  
VTM  
VD = 67% VDRM RGK = 220Ω  
,
V/µs  
V
5
ITM = 16A, tP = 380 µs  
1.6  
Tj = 125°C  
Max.  
Max.  
V
Threshold voltage  
Dynamic resistance  
Vto  
Rd  
0.85  
mΩ  
µA  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
46  
5
IDRM  
IRRM  
Max.  
VDRM = VRRM, RGK = 220Ω  
mA  
1
THERMAL RESISTANCE  
SYMBOL  
Parameter  
VALUE  
UNIT  
1.3  
IPAK/DPAK/TO-220AB  
Rth(j-c)  
°C/W  
Junction to case (DC)  
4.6  
70  
TO-220AB insulated  
S = 0.5 cm2  
D-PAK  
Rth(j-a)  
Junction to ambient (DC)  
°C/W  
100  
60  
I-PAK  
TO-220AB, TO-220AB insulated  
S=Copper surface under tab  
www.nellsemi.com  
Page 2 of 7  
RoHS  
RoHS  
8PT Series  
SEMICONDUCTOR  
PRODUCT SELECTOR  
VOLTAGE (xx)  
PART NUMBER  
PACKAGE  
SENSITIVITY  
600 V  
800 V  
1000 V  
200 µA  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
8PTxxA-S/8PTxxAl-S  
TO-220AB  
TO-220AB  
0.5~5 mA  
2~15 mA  
8PTxxA-T/8PTxxAl-T  
8PTxxA/8PTxxAl  
V
V
TO-220AB  
I-PAK  
8PTxxF-S  
8PTxxF-T  
200 µA  
0.5~5 mA  
2~15 mA  
200 µA  
V
V
V
V
V
I-PAK  
I-PAK  
8PTxxF  
8PTxxG-S  
8PTxxG-T  
D-PAK  
D-PAK  
D-PAK  
V
V
0.5~5 mA  
2~15 mA  
V
8PTxxG  
ORDERING INFORMATION  
,
WEIGHT  
2.0g  
PACKAGE  
DELIVERY MODE  
ORDERING TYPE  
8PTxxA-y  
MARKING  
8PTxxA-y  
BASE Q TY  
TO-220AB  
50  
50  
Tube  
Tube  
8PTxxAI-y  
8PTxxAI-y  
TO-220AB (insulated)  
2.3g  
8PTxxF-y  
8PTxxG-y  
8PTxxF-y  
8PTxxG-y  
0.40g  
0.38g  
TO-251(I-PAK)  
TO-252(D-PAK)  
80  
80  
Tube  
Tube  
Note: xx = voltage, y = sensitivity  
ORDERING INFORMATION SCHEME  
-
S
8 PT 06  
Current  
8 = 8A, IT(RMS)  
SCR series  
Voltage Code  
06 = 600V  
08 = 800V  
10 = 1000V  
Package type  
A = TO-220AB (non-insulated)  
AI = TO-220AB ( insulated)  
F = TO-251 (IPAK)  
G = TO-252 (DPAK)  
IGT Sensitivity  
S = 70~200 µA  
T = 0.5~5 mA  
Blank = 2~15 mA  
www.nellsemi.com  
Page 3 of 7  
RoHS  
RoHS  
8PT Series  
SEMICONDUCTOR  
Fig.1 Maximum average power dissipation versus  
average on-state current  
Fig.2 Average and DC on-state current versus  
case temperature  
IT(AV)(A)  
P(W)  
10  
9
8
7
DPAK IPAK  
α=180°  
TO-220AB  
DC  
8
7
6
5
6
5
α=180°  
4
3
2
1
0
TO-220AB  
Insulated  
4
3
2
360°  
α
T
(°C)  
1
0
case  
IT(AV)(A)  
0
1
2
3
4
5
6
0
25  
50  
75  
100  
125  
Fig.4 Relative variation of thermal impedance  
junction to case versus pulse duration  
Fig.3 Average and DC on-state current versus  
ambient temperature  
IT(AV)(A)  
K=[Zth(j-c)/Rth(j-c)]  
2.5  
2.0  
1.0  
Recommended pad layout  
Fr4 printed circuit board  
DC  
α=180°  
0.5  
TO-220AB  
TO-220AB  
Insulated  
1.5  
1.0  
0.2  
0.1  
DPAK  
IPAK  
0.5  
0.0  
t
(s)  
p
T
(°C)  
75  
amb  
0
25  
50  
100  
125  
1E+3  
1E+2  
1E+1  
1E+0  
Fig.5 Relative variation of thermal impedance  
junction to ambient versus pulse duration  
Fig.6 Relative variation of gate trigger current  
and holding current versus junction  
temperature for IGT=200µA  
K=[Zth(j-a)/Rth(j-a)]  
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]  
1.00  
2.0  
Recommended pad layout,  
FR printed circuit board  
1.8  
1.6  
4
IGT  
1.4  
1.2  
DPAK  
l
& IL  
=1KΩ  
GK  
H
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
R
0.10  
TO-220AB  
TO-220AB  
Insulated  
T (°C)  
j
t
(s)  
p
0.01  
1E-2  
-40 -20  
0
20  
40  
60  
80 100 120 140  
1E-1  
1E+0  
1E+1  
1E+2 5E+2  
www.nellsemi.com  
Page 4 of 7  
RoHS  
RoHS  
8PT Series  
SEMICONDUCTOR  
Fig.8 Relative variation of holding current  
versus gate-cathode resistance  
(typical values)  
Fig.7 Relative variation of gate trigger and  
holding current versus junction  
temperature  
IH[RGK] / IH[RGK=1KΩ]  
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]  
6.0  
2.4  
2.2  
Tj=25 C  
IGT=200µA  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
5mA & 15mA  
IGT  
2.0  
1.8  
1.6  
1.4  
1.2  
l
& IL  
H
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
T (°C)  
j
0.5  
0.0  
R
(KΩ)  
GK  
-40 -20  
0
20  
40  
60  
80 100 120 140  
1E-1  
1E+0  
1E+1  
1E-2  
Fig.9 Relative variation of dV/dt immunity  
versus gate-cathode resistance  
(typical values) for IG=200µA  
Fig.10 Relative variation of dV/dt immunity  
versus gate-cathode capacitance  
(typical values) for IGT=200µA  
dV/dt[CGK] / dV/dt[RGK=220Ω]  
dV/dt[RGK] / dV/dt[RGK=220Ω]  
10.00  
15.0  
VD=0.67 X VDRM  
Tj=125 C  
RGK=220Ω  
Tj=125°C  
VD=0.67 X VDRM  
12.5  
10.0  
7.5  
1.00  
5.0  
0.10  
0.01  
2.5  
0.0  
CGK(nF)  
20 40 60 80 100 120 140 160 180 200 220  
R
(KΩ)  
GK  
0
0
200 400 600 800 1000 1200 1400 1600 1800 2000  
Fig.11 Surge peak on-state current versus  
number of cycles  
Fig.12 Non-repetitive surge peak on-state current  
and corresponding values of l²t  
ISTM(A)  
ITSM(A),I²t(A²s)  
100  
1000  
Tj inital=25 C  
90  
80  
tp=10ms  
ITSM  
One cycle  
70  
60  
50  
40  
30  
20  
Non repetitive  
dI/dt Iimitation  
T
initial=25°C  
j
width tp< 10ms  
Sinusoidal pulse with  
100  
Repetitive  
Tc=110°C  
I²t  
10  
0
t
(ms)  
p
Number of cycles  
100  
10  
1
10  
1000  
0.01  
0.10  
1.00  
10.00  
www.nellsemi.com  
Page 5 of 7  
RoHS  
RoHS  
8PT Series  
SEMICONDUCTOR  
Fig.14 Thermal resistance junction to ambient  
versus copper surface under tab (DPAK)  
Fig.13 On-state characteristics (maximum  
values)  
ITM(A)  
Rth(j-a)(°C/W)  
100  
50.0  
Tjmax  
Vt0=0.85V  
Rd=46mΩ  
Epoxy printed circuit board FR4  
copper thickness = 35µm  
80  
10.0  
1.0  
Tj=max  
60  
40  
20  
Tj=25°C  
VTM(V)  
S(cm²)  
0.1  
0
0
2
4
6
8
10 12 14 16 18 20  
0.0  
0.5  
1.0  
1.5  
2.5  
3.0  
3.5  
4.0  
2.0  
Case Style  
TO-220AB  
10.54 (0.415) MAX.  
4.70 (0.185)  
9.40 (0.370)  
9.14 (0.360)  
3.91 (0.154)  
3.74 (0.148)  
4.44 (0.1754)  
1.39 (0.055)  
1.14 (0.045)  
2.87 (0.113)  
2.62 (0.103)  
3.68 (0.145)  
3.43 (0.135)  
15.32 (0.603)  
14.55 (0.573)  
16.13 (0.635)  
15.87 (0.625)  
PIN  
2
8.89 (0.350)  
8.38 (0.330)  
1
3
4.06 (0.160)  
3.56 (0.140)  
29.16 (1.148)  
28.40 (1.118)  
2.79 (0.110)  
2.54 (0.100)  
1.45 (0.057)  
1.14 (0.045)  
14.22 (0.560)  
13.46 (0.530)  
2.67 (0.105)  
2.41 (0.095)  
0.90 (0.035)  
0.70 (0.028)  
5.20 (0.205)  
4.95 (0.195)  
2.65 (0.104)  
2.45 (0.096)  
0.56 (0.022)  
0.36 (0.014)  
TO-251  
(I-PAK)  
6.6(0.26)  
6.4(0.52)  
2.4(0.095)  
2.2(0.086)  
1.5(0.059)  
0.62(0.024)  
0.48(0.019)  
5.4(0.212)  
5.2(0.204)  
1.37(0.054)  
6.2(0.244)  
6(0.236)  
4T  
16.3(0.641)  
15.9(0.626)  
1.9(0.075)  
1.8(0.071)  
9.4(0.37)  
9(0.354)  
0.85(0.033)  
0.65(0.026)  
0.55(0.021)  
0.76(0.03)  
4.6(0.181)  
4.4(0.173)  
0.62(0.024)  
0.45(0.017)  
2
(A2)  
(G)3  
1(A1)  
www.nellsemi.com  
Page 6 of 7  
RoHS  
RoHS  
8PT Series  
SEMICONDUCTOR  
Case Style  
TO-252  
(D-PAK)  
2.4(0.095)  
2.2(0.086)  
6.6(0.259)  
6.4(0.251)  
1.5(0.059)  
5.4(0.212)  
5.2(0.204)  
0.62(0.024)  
0.48(0.019)  
1.37(0.054)  
2
6.2(0.244)  
6(0.236)  
9.35(0.368)  
10.1(0.397)  
1
2
3
0.89(0.035)  
0.64(0.025)  
0.62(0.024)  
0.45(0.017)  
1.14(0.045)  
0.76(0.030)  
2.28(0.090)  
2
(A2)  
4.57(0.180)  
(G)3  
1(A1)  
RoHS  
www.nellsemi.com  
Page 7 of 7  
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