VTP Process Photodiodes
VTP7110
PACKAGE DIMENSIONS inch (mm)
CASE 7 LATERAL
CHIP ACTIVE AREA: .0011 in2 (0.684 mm2)
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a clear,
lensed sidelooking package. These diodes
exhibit low dark current under reverse bias and
fast speed of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 85°C
-40°C to 85°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP7110
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
6
Typ.
Max.
I
Short Circuit Current
Temperature Coefficient
H = 100 fc, 2850 K
2850 K
9
µA
%/°C
mV
SC
TC I
I
.20
350
-2.0
SC
SC
V
Open Circuit Voltage
Temperature Coefficient
H = 100 fc, 2850 K
2850 K
OC
TC V
V
mV/°C
nA
OC
OC
I
Dark Current
H = 0, VR = 10 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
35
25
D
R
Shunt Resistance
7
GΩ
SH
C
Junction Capacitance
Responsivity
pF
J
2
Re
.015
.55
A/(W/cm )
A/W
S
Sensitivity
@ Peak
R
λ
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
400
30
1150
nm
range
λ
925
140
±58
nm
p
V
V
BR
1/2
θ
Degrees
W ⁄ Hz
cm Hz / W
-13
NEP
D*
1.9 x 10 (Typ.)
11
5.3 x 10 (Typ.)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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