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TXS4558

型号：

TXS4558

描述：

双SIM卡电源与电平转换器和专用双路LDO[ Dual-SIM Card Power Supply with Level Translator and Dedicated Dual LDO ]

品牌：

TI[ TEXAS INSTRUMENTS ]

页数：

18 页

PDF大小：

755 K

下载PDF手册
TXS4558  
www.ti.com  
SLLSE93A –SEPTEMBER 2011–REVISED SEPTEMBER 2011  
Dual-SIM Card Power Supply with Level Translator and Dedicated Dual LDO  
Check for Samples: TXS4558  
1
FEATURES  
RUK PACKAGE  
(TOP VIEW)  
•
Level Translator  
–
–
VCC Range of 1.65 V to 3.3 V  
VBATT Range of 2.3V to 5.5V  
•
Low-Dropout (LDO) Regulator  
–
–
–
50-mA LDO Regulator With Enable  
1.8-V or 2.95-V Selectable Output Voltage  
Very Low Dropout: 100 mV (Max) at 50 mA  
•
•
•
Control and Communication Through GPIO  
Interface with Baseband Processor  
1
15  
VSIM2  
CLKRUN2  
2
3
4
5
14  
13  
12  
11  
CLKRUN1  
CSEL  
VCC  
Isolated Clock Stop Mode for both SIM1 and  
SIM2 cards  
GND  
VBATT  
ESD Protection Exceeds JESD 22  
VSEL1  
VSIM1  
–
–
–
2000-V Human-Body Model (A114-B)  
500-V Charged-Device Model (C101)  
8kV HBM for SIM pins  
En1  
SIM1_CLK  
•
Package  
20-Pin QFN (3 mm x 3 mm)  
–
NOTE: Exposed center thermal pad must be  
electrically connected to Ground.  
DESCRIPTION  
The TXS4558 is a complete dual-supply standby Smart Identity Module (SIM) card solution for interfacing wire-  
less baseband processors with two individual SIM subscriber cards to store data for mobile handset applications.  
It is a custom device which is used to extend a single SIM/UICC interface to be able to support two  
SIM’s/UICC’s.  
The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards.  
It includes a high-speed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces,  
two low-dropout (LDO) voltage regulators that have output voltages that are selectable between 2.95-V Class-B  
and 1.8-V Class-C interfaces. Simple GPIO inputs are used to switch between the two SIM cards and to put it  
into different modes. The voltage-level translator has two supply voltage pins. VCC sets the reference for the  
baseband interface and can be operated from 1.65 V to 3.3 V. VSIM1 and VSIM2 are programmed to either  
1.8 V or 2.95 V, each supplied by an independent internal LDO regulator. The integrated LDO accepts input  
battery voltages from 2.3 V to 5.5 V and outputs up to 50 mA to the B-side circuitry and external Class-B or  
Class-C SIM card.  
The TXS4558 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification  
for SIM cards. The device also has 8kV HBM protection for the SIM card pins and standard 2kV HBM protection  
for all the other pins.  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2011, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
TXS4558  
SLLSE93A –SEPTEMBER 2011–REVISED SEPTEMBER 2011  
www.ti.com  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
ORDERING INFORMATION(1)  
TA  
PACKAGE(2)  
ORDERABLE PART NUMBER  
TOP-SIDE MARKING  
–40°C to 85°C  
QFN – RUK  
Tape and reel  
TXS4558RUKR  
ZTG  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
web site at www.ti.com.  
(2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging.  
INTERFACING THE SIM CARD  
VCC  
VBATT  
3V/1.8V SIM Card  
3V or 1.8V, 50mA  
Control I/P’s  
Vcc  
GND  
Vpp  
I/O  
LDO  
RST  
CLK  
NC  
Control  
Logic  
NC  
Baseband  
RST  
Translator  
I/O  
MUX  
CLK  
3V/1.8V SIM Card  
3V or 1.8V, 50mA  
Vcc  
RST  
CLK  
NC  
GND  
Vpp  
I/O  
LDO  
NC  
Translator  
PIN FUNCTIONS(1)  
NO.  
1
NAME  
VSIM2  
TYPE(2)  
POWER DOMAIN  
DESCRIPTION  
O
P
P
O
O
O
I/O  
I/O  
I
VBATT  
—
1.8 V/2.95 V supply voltage to SIM2  
2
VCC  
1.8-V power supply for device operation and I/O buffers toward baseband  
Battery power supply  
3
VBATT  
VSIM1  
SIM1CLK  
SIM1RST  
SIM1I/O  
I/O  
—
4
VBATT  
VSIM1  
VSIM1  
VSIM1  
VCC  
1.8 V/2.95 V supply voltage to SIM1  
SIM1 clock  
5
6
SIM1 reset  
7
SIM1 data  
8
UICC/SIM data  
9
RST  
VCC  
UICC/SIM reset from baseband  
UICC/SIM clock  
10  
11  
12  
13  
CLK  
I
VCC  
EN1  
I
VCC  
Enable pin for SIM1 interface  
Select pin for 1.8V or 2.95V LDO1 output  
Channel select between SIM1 or SIM2  
VSEL1  
CSEL  
I
VCC  
I
VCC  
(1) Thermal Pad must be electrically connected to Ground Plane.  
(2) G = Ground, I = Input, O = Output, P = Power  
2
Submit Documentation Feedback  
Copyright © 2011, Texas Instruments Incorporated  
Product Folder Link(s): TXS4558  
TXS4558  
www.ti.com  
NO.  
SLLSE93A –SEPTEMBER 2011–REVISED SEPTEMBER 2011  
PIN FUNCTIONS(1) (continued)  
NAME  
TYPE(2)  
POWER DOMAIN  
DESCRIPTION  
Select pin for SIM1 Clock stop mode  
14  
15  
16  
17  
18  
19  
20  
CLKRUN1  
CLKRUN2  
VSEL2  
I
I
VCC  
VCC  
Select pin for SIM2 Clock stop mode  
Select pin for 1.8V or 2.95V LDO2 output  
Enable pin for SIM2 interface  
SIM2 data  
I
VCC  
EN2  
I
VCC  
SIM2I/O  
SIM2RST  
SIM2CLK  
I/O  
O
O
VSIM2  
VSIM2  
VSIM2  
SIM2 reset  
SIM2 clock  
TRUTH TABLE  
CSEL  
VSEL1  
VSEL2  
SELECTED CARD  
VSIM1  
VSIM2  
1.8 V  
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
1
1
1
1
2
2
2
2
1.8 V  
1.8 V  
2.95 V  
1.8 V  
2.95 V  
2.95 V  
1.8 V  
2.95 V  
1.8 V  
1.8 V  
2.95 V  
1.8 V  
2.95 V  
2.95 V  
2.95 V  
ABSOLUTE MAXIMUM RATINGS  
over operating free-air temperature range (unless otherwise noted)  
MIN  
MAX  
UNIT  
V
LEVEL TRANSLATOR  
VCC Supply voltage range  
–0.3  
–0.5  
–0.5  
–0.5  
–0.5  
–0.5  
–0.5  
–0.5  
–0.5  
–0.5  
4.0  
4.6  
4.6  
4.6  
4.6  
4.6  
4.6  
4.6  
4.6  
4.6  
–50  
–50  
VCC-port  
VI  
Input voltage range  
VSIMx-port  
Control inputs  
VCC-port  
V
Voltage range applied to any output in the high-impedance or  
power-off state  
VO  
VSIMx-port  
Control inputs  
VCC-port  
V
V
VO  
Voltage range applied to any output in the high or low state  
VSIMx-port  
Control inputs  
VI < 0  
IIK  
IOK  
IO  
Input clamp current  
mA  
mA  
mA  
mA  
°C  
Output clamp current  
VO < 0  
Continuous output current  
Continuous current through VCCA or GND  
Storage temperature range  
±50  
±100  
–65  
Tstg  
150  
LDO  
VBAT Input voltage range  
VOUT Output voltage range  
–0.3  
–0.3  
–55  
–55  
6
6
V
V
TJ  
Junction temperature range  
Storage temperature range  
150  
150  
2
°C  
°C  
kV  
V
Tstg  
Human-Body Model (HBM)  
ESD rating (host side)  
Charged-Device Model (CDM)  
500  
Copyright © 2011, Texas Instruments Incorporated  
Submit Documentation Feedback  
3
Product Folder Link(s): TXS4558  
 
TXS4558  
SLLSE93A –SEPTEMBER 2011–REVISED SEPTEMBER 2011  
www.ti.com  
UNIT  
RECOMMENDED OPERATING CONDITIONS(1)  
MIN  
MAX  
LEVEL TRANSLATOR  
VCC  
VIH  
Supply voltage  
1.7  
VCC × 0.7  
0
3.3  
V
V
High-level input voltage  
Low-level input voltage  
3.3  
Applies to pins: EN1, EN2,RST, CLK, I/O, CLKRUN1,  
CLKRUN2, VSEL1, VSEL2, CSEL  
VIL  
VCC × 0.3  
V
Δt/Δv Input transition rise or fall rate  
TA Operating free-air temperature  
5
ns/V  
°C  
–40  
85  
(1) All unused data inputs of the device must be held at VCCI or GND to ensure proper device operation. Refer to the TI application report,  
Implications of Slow or Floating CMOS Inputs, literature number SCBA004.  
ELECTRICAL CHARACTERISTICS — LEVEL TRANSLATOR  
over recommended operating free-air temperature range (unless otherwise noted)  
PARAMETER  
SIM1_RST  
SIM1_CLK  
SIM1_I/O  
SIM2_RST  
SIM2_CLK  
SIM2_I/O  
I/O  
TEST CONDITIONS  
IOH = –100 µA, Push-Pull  
IOH = –10 µA, Open-Drain  
IOH = –100 µA, Push-Pull  
VCC  
VSIM1  
VSIM2  
MIN  
VSIM1 × 0.8  
VSIM1 × 0.8  
VSIM1 × 0.8  
VSIM2 × 0.8  
VSIM2 × 0.8  
VSIM2 × 0.8  
VCC × 0.8  
TYP(1)  
MAX  
UNIT  
1.8 V / 2.95 V,  
(Supplied by LDO)  
1.8 V / 2.95 V,  
(Supplied by LDO)  
VOH  
1.7 V to 3.3 V  
V
IOH = –10 µA, Open-Drain  
IOH = –10 µA, Open-Drain  
SIM1_RST  
SIM1_CLK  
SIM1_I/O  
SIM2_RST  
SIM2_CLK  
SIM2_I/O  
I/O  
VSIM1 × 0.2  
VSIM1 × 0.2  
0.3  
IOL = 1 mA, Push-Pull  
IOL = 1 mA, Open-Drain  
IOL = 1 mA, Push-Pull  
1.8 V / 2.95 V  
(Supplied by LDO)  
1.8 V / 2.95 V  
(Supplied by LDO)  
VOL  
1.7 V to 3.3 V  
VSIM2 × 0.2  
VSIM2 × 0.2  
0.3  
V
IOL = 1 mA, Open-Drain  
IOL = 1 mA, Open-Drain  
0.3  
VI = EN1,EN2, CLKRUN1, CSEL,  
CLKRUN2, VSEL1, VSEL2,  
1.8 V / 2.95 V  
(Supplied by LDO)  
1.8 V / 2.95 V  
(Supplied by LDO)  
II  
Control inputs  
1.7 V to 3.3 V  
1.7 V to 3.3 V  
±1  
±5  
µA  
µA  
1.8 V / 2.95 V  
(Supplied by LDO)  
1.8 V / 2.95 V  
(Supplied by LDO)  
ICC  
VI = VCCI, IO = 0  
I/O  
SIM_I/O port  
VSIMx port  
8
8
4
Cio  
Ci  
pF  
pF  
Control inputs  
VI = VCC or GND  
(1) All typical values are at TA = 25°C.  
LDO ELECTRICAL CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
MIN TYP(1)  
MAX UNIT  
VBAT  
VSIM1,2  
VDO  
Input voltage  
2.3  
5.5  
3.05  
1.9  
V
Class-B Mode , 0 mA < ISIM1,2 < 50 mA  
Class-C Mode , 0 mA < ISIM1,2 < 50 mA  
IOUT = 50 mA  
2.85  
1.7  
2.95  
1.8  
Output voltage  
Dropout voltage  
Operating current  
V
100 mV  
VSIM1 = 2.95 V, VSIM2 = 0, ISIM1 = 0 µA  
VSIM1 = 1.8 V, VSIM2 = 0, ISIM1 = 0 µA  
40  
40  
50  
µA  
50  
IVBAT  
ISHDN  
Shutdown current (IGND)  
Short-circuit current  
Output Capacitor  
V
ENx ≤ 0.4 V, (VSIMx + VDO) ≤ VBAT ≤ 5.5 V, TJ = 85°C  
1
µA  
mA  
µF  
IOUT(SC)  
COUT  
RL = 0 Ω  
145  
1
f = 1 kHz  
50  
40  
VBAT = 3.15 V, VSIM1,2 = 1.8 V or 2.95 V,  
COUT = 1 µF, IOUT = 10 mA  
PSRR  
Power-supply rejection ratio  
dB  
f = 10 kHz  
TSTR  
TJ  
VSIM1,2 Start-up time  
VSIM1,2 = 1.8 V or 3 V, IOUT = 50 mA, COUT = 1 µF  
400  
125  
µS  
°C  
Operating junction temperature  
–40  
(1) All typical values are at TA = 25°C.  
4
Submit Documentation Feedback  
Copyright © 2011, Texas Instruments Incorporated  
Product Folder Link(s): TXS4558  
TXS4558  
www.ti.com  
SLLSE93A –SEPTEMBER 2011–REVISED SEPTEMBER 2011  
GENERAL ELECTRICAL CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
MIN TYP  
MAX UNIT  
RI/OPU  
I/O pull-up  
16  
20  
24  
kΩ  
kΩ  
RSIMPU  
SIM_I/O pull-up  
SIM enabled and selected with CSEL  
7.4  
8.0  
8.7  
Active pull-downs are connected to the VSIM regulator output to  
the SIM_CLK, SIM_RST, SIM_I/O when EN = 0  
RSIMPD  
SIM_I/O pull-down  
2
kΩ  
SWITCHING CHARACTERISTICS – VSIMx = 1.8 V or 2.95 V Supplied by Internal LDO  
over recommended operating free-air temperature range (unless otherwise noted)  
VCC = 1.8 V ± 0.15 V  
PARAMETER  
TEST CONDITIONS  
UNIT  
MIN  
MAX  
trA  
I/O  
1
1
µs  
µs  
SIMx_RST  
SIMx_CLK  
SIMx_I/O  
trB  
50  
ns  
CL = 50 pF  
100  
25  
ns  
fmax  
SIMx_CLK  
SIMx_CLK  
MHz  
Duty Cycle  
40%  
60%  
OPERATING CHARACTERISTICS  
TA = 25°C, VSIMx = 1.8 V  
PARAMETER  
TEST CONDITIONS  
TYP  
UNIT  
Class C (CLK,  
RST)  
VCC-port input, VSIMx-port  
output  
12.7  
pF  
Class B (CLK,  
RST)  
VCC-port input, VSIMx-port  
output  
15.4  
10.8  
20.3  
CL = 0  
f = 5 MHz  
tr = tf = 1 ns  
(1)  
Cpd  
VCC-port input, VSIMx-port  
output  
CLASS C (IO)  
CLASS B (IO)  
pF  
VCC-port input, VSIMx-port  
output  
(1) Power dissipation capacitance per transceiver  
Copyright © 2011, Texas Instruments Incorporated  
Submit Documentation Feedback  
5
Product Folder Link(s): TXS4558  
TXS4558  
SLLSE93A –SEPTEMBER 2011–REVISED SEPTEMBER 2011  
www.ti.com  
PIN FUNCTION  
PIN NAME  
PIN NUMBER  
PIN FUNCTION  
Power supply and voltage reference for device operation and I/O buffers toward  
baseband.  
VCC  
2
3
VBATT  
This is the battery power supply for the TXS4558.  
1.8 V/2.95 V supply voltage for the respective SIM1 and SIM2. These outputs are  
activated through the EN1 and EN2 pins and set to be 1.8V or 2.95V through  
VSEL1 and VSEL2.  
VSIM1, VSIM2  
1,4  
These are voltage level shifted CLK signals for connection to SIM1 and SIM2.  
Functionality while the corresponding SIM is not selected via CSEL is controlled by  
CLKRUN1 and CLKRUN2 control pins.  
SIMCLK, SIM2CLK  
5, 20  
These are voltage level shifted RST signals for connection to SIM1 and SIM2.  
Their output level when de-selected is latched at the last state.  
6, 19  
7, 18  
SIM1RST, SIM2RST  
SIM1IO, SIM2IO  
These are voltage level shifted IO signals for connection to SIM1 and SIM2. These  
are bi-directional data signals.  
Microcontroller side data IO pin. The IO pin provides the bidirectional  
communication path to the SIM cards. The SIMxIO communicating with IO is  
selected by CSEL.  
IO  
8
9
Microcontroller side reset RST pin input. RST provides signals directly to the  
selected SIM SIMxRST. When a SIM interface is deselected with CSEL, the last  
RST value is held at the SIMxRST.  
RST  
The CLK pin supplies the clock signal to the cards. It is level shifted and  
transmitted directly to the SIMxCLK pin of the selected card. If CLKRUNx is HIGH,  
the clock signal will be transmitted to the SIMxCLK pin, regardless of whether that  
card is selected.  
CLK  
10  
EN1 and EN2 enable and disable the power supply to SIM1 and SIM2, and the  
corresponding interface.  
EN1, EN2  
VSEL1, VSEL2  
CSEL  
11, 17  
12, 16  
13  
These pins set the VSIM1 and VSIM2 voltages and the corresponding interface IO  
voltages. When VSELx is low, VSIMx is 1.8V. When VSELx is high, VSIMx is  
2.95V.  
CSEL selects which SIM is activated and communicates with the baseband. When  
CSEL is low, SIM1 is active. When CSEL is high, SIM2 is active.  
The CLKRUN1 and CLKRUN2 control the functionality of the SIM1CLK and  
SIM2CLK pins when their corresponding SIM cards are deselected using CSEL.  
When CLKRUNx is high, the CLK signal is transmitted to the corresponding  
SIMxCLK, even when the card is deselected with CSEL. When CLKRUNx is low,  
the SIMxCLK signal is brought low when the corresponding SIM is deselected with  
CSEL.  
CLKRUN1, CLKRUN2  
Exposed Center Pad  
14, 15  
21  
This center pad must be connected to ground.  
6
Submit Documentation Feedback  
Copyright © 2011, Texas Instruments Incorporated  
Product Folder Link(s): TXS4558  
TXS4558  
www.ti.com  
SLLSE93A –SEPTEMBER 2011–REVISED SEPTEMBER 2011  
OPERATION  
Clock Run Mode  
SIMS have varying requirements for the SIM CLK. Using CLKRUN, the user can decide if the SIMxCLK pin  
continuously transmits the CLK signal, or is brought low when the SIM is deselected with CSEL. If CLKRUNx is  
LOW, the SIMxCLK is brought LOW two clock cycles after the SIMx is deselected with CSEL. If SIMxCLK is  
high, the CLK transmits to the SIMxCLK, even if the SIMx is deselected with CSEL.  
CSEL  
When a channel is deselected using the CSEL pin, the SIMxRST state is latched, the SIMxIO becomes high  
impedance and SIMxCLK function is dependent on CLKRUNx.  
Operation Activation/Deactivation  
When the EN1, EN2 pin is brought high, the device performs the activation sequence for the corresponding SIM  
interface. Each SIM interface is activated independently based on its EN IO.  
Activation Sequence  
1. The device holds SIMxIO, SIMxCLK and SIMxRST low.  
2. VSIMx is activated and powered.  
3. The device waits for the VSIMx output to reach the correct voltage. Once this voltage is reached, SIMxIO,  
and SIMxRST are enabled.  
4. The SIMxCLK is activated on the 2nd rising edge after the SIMxIO is enabled.  
When the ENx pin is brought low, the device performs the deactivation sequence for the corresponding SIM  
interface. Deactivation Sequence,  
Deactivation Sequence  
1. SIMxRST is deactivated and set low.  
2. Two clock cycles after EN is brought LOW, the SIMxCLK is disabled and brought LOW. If the CLK is not  
active, SIMxCLK is disabled and brought low approximately 9us after ENx is brought low.  
3. Approximately 9us after the ENx is brought LOW, SIMxIO is disabled and set LOW.  
4. After SIMxIO is brought LOW, the VSIMx is deactivated and unpowered.  
Copyright © 2011, Texas Instruments Incorporated  
Submit Documentation Feedback  
7
Product Folder Link(s): TXS4558  
TXS4558  
SLLSE93A –SEPTEMBER 2011–REVISED SEPTEMBER 2011  
www.ti.com  
APPLICATION INFORMATION  
The LDO’s included on the TXS4558 achieve ultra-wide bandwidth and high loop gain, resulting in extremely  
high PSRR at very low headroom (VBAT – VSIM1/2). The TXS4558 provides fixed regulation at 1.8V or 2.95V. Low  
noise, GPIO enable and low ground pin current make it ideal for portable applications. The device offers current  
limit and thermal protection, and is fully specified from –40°C to 125°C.  
VSIM1  
VDDIO  
VBAT  
TXS4558  
1μF  
VSIM2  
GND  
1μF  
1μF  
0.1μF  
Figure 1. Typical Application Circuit for TXS4558  
Input and Output Capacitor Requirements  
It is good analog design practice to connect a 1.0 µF low equivalent series resistance (ESR) capacitor across the  
input supply (VBAT) near the regulator. Also, a 0.1µF is required for the logic core supply (VCC).  
This capacitor will counteract reactive input sources and improve transient response, noise rejection, and ripple  
rejection. A higher-value capacitor may be necessary if large, fast rise-time load transients are anticipated or if  
the device is located several inches from the power source. The LDO’s are designed to be stable with standard  
ceramic capacitors of values 1.0 µF or larger. X5R- and X7R-type capacitors are best because they have  
minimal variation in value and ESR over temperature. Maximum ESR should be <1.0 Ω.  
Output Noise  
In most LDO’s, the bandgap is the dominant noise source. To improve ac performance such as PSRR, output  
noise, and transient response, it is recommended that the board be designed with separate ground planes for  
VIN and VOUT, with each ground plane connected only at the GND pin of the device. In addition, the ground  
connection for the bypass capacitor should connect directly to the GND pin of the device.  
Internal Curent Limit  
The TXS4558 internal current limit helps protect the regulator during fault conditions. During current limit, the  
output sources a fixed amount of current that is largely independent of output voltage. For reliable operation, the  
device should not be operated in a current limit state for extended periods of time.  
The PMOS pass element in the TXS4558 has a built-in body diode that conducts current when the voltage at  
VSIM1/2 exceeds the voltage at VBAT. This current is not limited, so if extended reverse voltage operation is  
anticipated, external limiting may be appropriate.  
Dropout Voltage  
The TXS4558 uses a PMOS pass transistor to achieve low dropout. When (VBAT – VSIM1/2) is less than the  
dropout voltage (VDO), the PMOS pass device is in its linear region of operation and the input-to-output  
resistance is the RDS(ON) of the PMOS pass element. VDO will approximately scale with output current because  
the PMOS device behaves like a resistor in dropout.  
Startup  
The TXS4558 uses a quick-start circuit which allows the combination of very low output noise and fast start-up  
times.  
8
Submit Documentation Feedback  
Copyright © 2011, Texas Instruments Incorporated  
Product Folder Link(s): TXS4558  
TXS4558  
www.ti.com  
SLLSE93A –SEPTEMBER 2011–REVISED SEPTEMBER 2011  
Transient Response  
As with any regulator, increasing the size of the output capacitor reduces over/undershoot magnitude but  
increases duration of the transient response.  
Minimum Load  
The TXS4558 is stable and well-behaved with no output load. Traditional PMOS LDO regulators suffer from  
lower loop gain at very light output loads. The TXS4558 employs an innovative low-current mode circuit to  
increase loop gain under very light or no-load conditions, resulting in improved output voltage regulation  
performance down to zero output current.  
THERMAL INFORMATION  
Thermal Protection  
Thermal protection disables the output when the junction temperature rises to approximately +160°C, allowing  
the device to cool. When the junction temperature cools to approximately +140°C the output circuitry is again  
enabled. Depending on power dissipation, thermal resistance, and ambient temperature, the thermal protection  
circuit may cycle on and off. This cycling limits the dissipation of the regulator, protecting it from damage  
because of overheating.  
Any tendency to activate the thermal protection circuit indicates excessive power dissipation or an inadequate  
heat sink. For reliable operation, junction temperature should be limited to +125°C maximum. To estimate the  
margin of safety in a complete design (including heat sink), increase the ambient temperature until the thermal  
protection is triggered; use worst-case loads and signal conditions. For good reliability, thermal protection should  
trigger at least +35°C above the maximum expected ambient condition of your particular application. This  
configuration produces a worst-case junction temperature of 125°C at the highest expected ambient temperature  
and worst-case load.  
The internal protection circuitry of the TXS4558 has been designed to protect against overload conditions. It was  
not intended to replace proper heat sinking. Continuously running the TXS4558 into thermal shutdown will  
degrade device reliability.  
TYPICAL CHARACTERISTICS  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
1.8 V Vsim  
85°C Vsim  
2.95 V Vsim  
-40°C Vsim  
25°C Vsim  
-10  
0
100  
1000  
10000  
100000  
1000000  
0
5
10 15 20 25 30 35 40 45 50  
- Output Current - mA  
f - Frequency - Hz  
I
OUT  
Figure 2. PSRR  
Figure 3. Dropout Voltage vs Output Current  
Copyright © 2011, Texas Instruments Incorporated  
Submit Documentation Feedback  
9
Product Folder Link(s): TXS4558  
TXS4558  
SLLSE93A –SEPTEMBER 2011–REVISED SEPTEMBER 2011  
www.ti.com  
TYPICAL CHARACTERISTICS (continued)  
1
0.8  
0.6  
0.4  
0.2  
0
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
I
= 50 mA  
O
-100 mA, Vsim  
-40°C Vsim  
-0.2  
-0.4  
-0.6  
-0.8  
-1  
85°C Vsim  
-1.2  
-1.4  
-1.6  
-1.2  
-1.4  
-50 mA, Vsim  
25°C Vsim  
-1.6  
-1.8  
-2  
-2.2  
-2.4  
-1.8  
-2  
0
5
10 15 20 25 30 35 40 45 50  
- Output Current - mA  
-40 -30 -20 -10  
0
10 20 30 40 50 60 70 80  
- Temperature - °C  
I
OUT  
T
A
Figure 4. Output Voltage vs Temperature, Class-B/C  
Figure 5. Load Regulation, Iout = 50 mA, Class-C  
0.2  
0
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
I = 50 mA  
O
-40°C Vsim  
-0.2  
-0.4  
-0.6  
-40°C Vsim  
25°C Vsim  
25°C Vsim  
-0.8  
-1.2  
-1.4  
-1.6  
-1.8  
-2  
85°C Vsim  
-1  
-1.2  
85°C Vsim  
-1.4  
-1.6  
I
= 50 mA  
-1.8  
-2  
-2.2  
-2.4  
O
0
5
10 15 20 25 30 35 40 45 50  
- Output Current - mA  
2.7  
3.1  
3.5  
3.9  
V
4.3  
- V  
4.7  
5.1  
5.5  
I
BAT  
OUT  
Figure 6. Load Regulation, Iout = 50 mA, Class-B  
Figure 7. Line Regulation, Iout = 50 mA, Class-C  
10  
Submit Documentation Feedback  
Copyright © 2011, Texas Instruments Incorporated  
Product Folder Link(s): TXS4558  
TXS4558  
www.ti.com  
SLLSE93A –SEPTEMBER 2011–REVISED SEPTEMBER 2011  
TYPICAL CHARACTERISTICS (continued)  
330  
300  
270  
240  
210  
180  
150  
120  
90  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
I
= 50 mA  
O
-40°C Vsim  
25°C Vsim  
-40°C Vsim  
25°C Vsim  
85°C Vsim  
85°C Vsim  
-1.2  
-1.4  
-1.6  
-1.8  
-2  
60  
30  
-2.2  
-2.4  
0
2.7  
3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5 4.7 4.9 5.1 5.3 5.5  
3.5  
3.1  
3.9  
V
4.3  
- V  
4.7  
5.1  
5.5  
V
- V  
BAT  
BAT  
Figure 8. Line Regulation, Iout = 50 mA, Class-B  
Figure 9. Current Limit vs Input Voltage, Class-B/C  
150  
-50 mA, Vsim  
120  
90  
60  
30  
-100 mA, Vsim  
0
-40 -30 -20 -10  
0
10 20 30 40 50 60 70 80  
- ºC  
T
A
Figure 10. Ground Current vs Temperature, Class-C  
Copyright © 2011, Texas Instruments Incorporated  
Submit Documentation Feedback  
11  
Product Folder Link(s): TXS4558  
PACKAGE OPTION ADDENDUM  
www.ti.com  
23-Aug-2012  
PACKAGING INFORMATION  
Status (1)  
Eco Plan (2)  
MSL Peak Temp (3)  
Samples  
Orderable Device  
Package Type Package  
Drawing  
Pins  
Package Qty  
Lead/  
Ball Finish  
(Requires Login)  
TXS4558RUKR  
ACTIVE  
WQFN  
RUK  
20  
3000  
Green (RoHS  
& no Sb/Br)  
CU NIPDAU Level-2-260C-1 YEAR  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability  
information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that  
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between  
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight  
in homogeneous material)  
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.  
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information  
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and  
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.  
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.  
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.  
Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
22-Aug-2012  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0  
B0  
K0  
P1  
W
Pin1  
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant  
(mm) W1 (mm)  
TXS4558RUKR  
WQFN  
RUK  
20  
3000  
330.0  
12.4  
3.3  
3.3  
1.1  
8.0  
12.0  
Q2  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
22-Aug-2012  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
WQFN RUK 20  
SPQ  
Length (mm) Width (mm) Height (mm)  
367.0 367.0 35.0  
TXS4558RUKR  
3000  
Pack Materials-Page 2  
IMPORTANT NOTICE  
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other  
changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. Buyers should  
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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms  
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary  
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TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and  
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TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or  
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