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1SMB5.0AT3/D

型号：

1SMB5.0AT3/D

描述：

齐纳瞬态电压抑制器\n[ Zener Transient Voltage Suppressors ]

品牌：

ETC[ ETC ]

页数：

8 页

PDF大小：

61 K

下载PDF手册
1SMB5.0AT3 Series  
600 Watt Peak Power Zener  
Transient Voltage Suppressors  
Unidirectional*  
The SMB series is designed to protect voltage sensitive  
components from high voltage, high energy transients. They have  
excellent clamping capability, high surge capability, low zener  
impedance and fast response time. The SMB series is supplied in  
ON Semiconductor’s exclusive, cost-effective, highly reliable  
Surmetic package and is ideally suited for use in communication  
systems, automotive, numerical controls, process controls, medical  
equipment, business machines, power supplies and many other  
industrial/consumer applications.  
http://onsemi.com  
PLASTIC SURFACE MOUNT  
ZENER OVERVOLTAGE  
TRANSIENT SUPPRESSORS  
5.0–170 VOLTS  
600 WATT PEAK POWER  
Specification Features:  
• Working Peak Reverse Voltage Range – 5.0 V to 170 V  
• Standard Zener Breakdown Voltage Range – 6.7 V to 199 V  
• Peak Power – 600 Watts @ 1 ms  
• ESD Rating of Class 3 (>16 KV) per Human Body Model  
• Maximum Clamp Voltage @ Peak Pulse Current  
• Low Leakage < 5 µA Above 10 V  
Cathode  
Anode  
• UL 497B for Isolated Loop Circuit Protection  
• Response Time is Typically < 1 ns  
SMB  
CASE 403A  
PLASTIC  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
MARKING DIAGRAM  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
YWW  
xx  
LEADS: Modified L–Bend providing more contact area to bond pads  
POLARITY: Cathode indicated by polarity band  
MOUNTING POSITION: Any  
Y
= Year  
WW  
xx  
= Work Week  
= Specific Device Code  
= (See Table Page 3)  
MAXIMUM RATINGS  
Please See the Table on the Following Page  
ORDERING INFORMATION  
*Please see 1SMB10CAT3 to 1SMB78CAT3 for Bidirectional devices.  
{
Device  
Package  
Shipping  
2500/Tape & Reel  
1SMBxxxAT3  
SMB  
Devices listed in bold, italic are ON Semiconductor  
Preferred devices. Preferred devices are recommended  
choices for future use and best overall value.  
†The “T3” suffix refers to a 13 inch reel.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
May, 2001 – Rev. 4  
1SMB5.0AT3/D  
1SMB5.0AT3 Series  
MAXIMUM RATINGS  
Rating  
Peak Power Dissipation (Note 1.) @ T = 25°C, Pulse Width = 1 ms  
Symbol  
Value  
600  
Unit  
W
P
PK  
L
DC Power Dissipation @ T = 75°C  
P
D
3.0  
W
L
Measured Zero Lead Length (Note 2.)  
Derate Above 75°C  
Thermal Resistance from Junction to Lead  
40  
25  
mW/°C  
°C/W  
R
q
JL  
DC Power Dissipation (Note 3.) @ T = 25°C  
Derate Above 25°C  
Thermal Resistance from Junction to Ambient  
P
0.55  
4.4  
226  
W
mW/°C  
°C/W  
A
D
R
q
JA  
Forward Surge Current (Note 4.) @ T = 25°C  
I
100  
A
A
FSM  
Operating and Storage Temperature Range  
T , T  
–65 to +150  
°C  
J
stg  
1. 10 X 1000 ms, non–repetitive  
2. 1″ square copper pad, FR–4 board  
3. FR–4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.  
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless  
I
A
otherwise noted, V = 3.5 V Max. @ I (Note 5.) = 30 A)  
F
F
I
F
Symbol  
Parameter  
I
Maximum Reverse Peak Pulse Current  
Clamping Voltage @ I  
PP  
V
C
PP  
V
C
V
V
V
Working Peak Reverse Voltage  
BR RWM  
RWM  
V
I
V
F
R
T
I
R
Maximum Reverse Leakage Current @ V  
I
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
I
T
F
I
Forward Current  
I
PP  
V
F
Forward Voltage @ I  
F
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,  
non–repetitive duty cycle.  
Uni–Directional TVS  
http://onsemi.com  
2
1SMB5.0AT3 Series  
ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)  
Breakdown Voltage  
V
C
@ I (Note 8.)  
PP  
V
RWM  
V
BR  
(Note 7.) Volts  
@ I  
V
C
I
PP  
(Note 6.)  
I
R
@ V  
RWM  
T
Device  
Min  
Nom  
Max  
mA  
Volts  
µA  
Volts  
Amps  
Marking  
Device  
1SMB5.0AT3  
1SMB6.0AT3  
1SMB6.5AT3  
1SMB7.0AT3  
KE  
KG  
KK  
KM  
5.0  
6.0  
6.5  
7.0  
800  
800  
500  
500  
6.40  
6.67  
7.22  
7.78  
6.7  
7.02  
7.6  
7.0  
7.37  
7.98  
8.6  
10  
10  
10  
10  
9.2  
65.2  
58.3  
53.6  
50.0  
10.3  
11.2  
12.0  
8.19  
1SMB7.5AT3  
1SMB8.0AT3  
1SMB8.5AT3  
1SMB9.0AT3  
KP  
KR  
KT  
KV  
7.5  
8.0  
8.5  
9.0  
100  
50  
10  
8.33  
8.89  
9.44  
10.0  
8.77  
9.36  
9.92  
9.21  
9.83  
10.4  
11.1  
1.0  
1.0  
1.0  
1.0  
12.9  
13.6  
14.4  
15.4  
46.5  
44.1  
41.7  
39.0  
5.0  
10.55  
1SMB10AT3  
1SMB11AT3  
1SMB12AT3  
1SMB13AT3  
KX  
KZ  
LE  
LG  
10  
11  
12  
13  
5.0  
5.0  
5.0  
5.0  
11.1  
12.2  
13.3  
14.4  
11.7  
12.85  
14  
12.3  
13.5  
14.7  
15.9  
1.0  
1.0  
1.0  
1.0  
17.0  
18.2  
19.9  
21.5  
35.3  
33.0  
30.2  
27.9  
15.15  
1SMB14AT3  
1SMB15AT3  
1SMB16AT3  
1SMB17AT3  
LK  
LM  
LP  
LR  
14  
15  
16  
17  
5.0  
5.0  
5.0  
5.0  
15.6  
16.7  
17.8  
18.9  
16.4  
17.6  
18.75  
19.9  
17.2  
18.5  
19.7  
20.9  
1.0  
1.0  
1.0  
1.0  
23.2  
24.4  
26.0  
27.6  
25.8  
24.0  
23.1  
21.7  
1SMB18AT3  
1SMB20AT3  
1SMB22AT3  
1SMB24AT3  
LT  
LV  
LX  
LZ  
18  
20  
22  
24  
5.0  
5.0  
5.0  
5.0  
20.0  
22.2  
24.4  
26.7  
21.05  
23.35  
25.65  
28.1  
22.1  
24.5  
26.9  
29.5  
1.0  
1.0  
1.0  
1.0  
29.2  
32.4  
35.5  
38.9  
20.5  
18.5  
16.9  
15.4  
1SMB26AT3  
1SMB28AT3  
1SMB30AT3  
1SMB33AT3  
ME  
MG  
MK  
MM  
26  
28  
30  
33  
5.0  
5.0  
5.0  
5.0  
28.9  
31.1  
33.3  
36.7  
30.4  
32.75  
35.05  
38.65  
31.9  
34.4  
36.8  
40.6  
1.0  
1.0  
1.0  
1.0  
42.1  
45.4  
48.4  
53.3  
14.2  
13.2  
12.4  
11.3  
1SMB36AT3  
1SMB40AT3  
1SMB43AT3  
1SMB45AT3  
MP  
MR  
MT  
MV  
36  
40  
43  
45  
5.0  
5.0  
5.0  
5.0  
40.0  
44.4  
47.8  
50.0  
42.1  
46.75  
50.3  
44.2  
49.1  
52.8  
55.3  
1.0  
1.0  
1.0  
1.0  
58.1  
64.5  
69.4  
72.7  
10.3  
9.3  
8.6  
8.3  
52.65  
1SMB48AT3  
1SMB51AT3  
1SMB54AT3  
1SMB58AT3  
MX  
MZ  
NE  
NG  
48  
51  
54  
58  
5.0  
5.0  
5.0  
5.0  
53.3  
56.7  
60.0  
64.4  
56.1  
59.7  
63.15  
67.8  
58.9  
62.7  
66.3  
71.2  
1.0  
1.0  
1.0  
1.0  
77.4  
82.4  
87.1  
93.6  
7.7  
7.3  
6.9  
6.4  
1SMB60AT3  
1SMB64AT3  
1SMB70AT3  
1SMB75AT3  
NK  
NM  
NP  
NR  
60  
64  
70  
75  
5.0  
5.0  
5.0  
5.0  
66.7  
71.1  
77.8  
83.3  
70.2  
74.85  
81.9  
73.7  
78.6  
86  
1.0  
1.0  
1.0  
1.0  
96.8  
103  
113  
121  
6.2  
5.8  
5.3  
4.9  
87.7  
92.1  
1SMB78AT3  
1SMB85AT3  
1SMB90AT3  
1SMB100AT3  
NT  
NV  
NX  
NZ  
78  
85  
90  
5.0  
5.0  
5.0  
5.0  
86.7  
94.4  
100  
111  
91.25  
99.2  
105.5  
117  
95.8  
104  
111  
1.0  
1.0  
1.0  
1.0  
126  
137  
146  
162  
4.7  
4.4  
4.1  
3.7  
100  
123  
1SMB110AT3  
1SMB120AT3  
1SMB130AT3  
1SMB150AT3  
PE  
PG  
PK  
PM  
110  
120  
130  
150  
5.0  
5.0  
5.0  
5.0  
122  
133  
144  
167  
128.5  
140  
151.5  
176  
135  
147  
159  
185  
1.0  
1.0  
1.0  
1.0  
177  
193  
209  
243  
3.4  
3.1  
2.9  
2.5  
1SMB160AT3  
1SMB170AT3  
PP  
PR  
160  
170  
5.0  
5.0  
178  
189  
187.5  
199  
197  
209  
1.0  
1.0  
259  
275  
2.3  
2.2  
6. A transient suppressor is normally selected according to the working peak reverse voltage (V  
the DC or continuous peak operating voltage level.  
), which should be equal to or greater than  
RWM  
7. V measured at pulse test current I at an ambient temperature of 25°C.  
BR  
T
8. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data – 600 W at the beginning of this group.  
http://onsemi.com  
3
1SMB5.0AT3 Series  
100  
10  
PULSE WIDTH (t ) IS DEFINED AS  
P
THAT POINT WHERE THE PEAK  
NONREPETITIVE  
t ≤ 10 µs  
rĂ  
PULSE WAVEFORM  
SHOWN IN FIGURE 2  
CURRENT DECAYS TO 50% OF I  
.
PP  
100  
50  
0
PEAK VALUE - I  
PP  
I
PP  
2
HALF VALUE -  
1
t
P
0.1  
0.1 µs  
1 µs  
10 µs  
100 µs  
1 ms  
10 ms  
0
1
2
3
4
t , PULSE WIDTH  
P
t, TIME (ms)  
Figure 1. Pulse Rating Curve  
Figure 2. Pulse Waveform  
160  
TYPICAL PROTECTION CIRCUIT  
140  
120  
Z
in  
100  
80  
LOAD  
V
in  
V
L
60  
40  
20  
0
0
25  
50  
75  
100  
125  
150  
T , AMBIENT TEMPERATURE (°C)  
A
Figure 3. Pulse Derating Curve  
10,000  
1000  
MEASURED @  
ZERO BIAS  
MEASURED @ V  
RWM  
100  
10  
0.1  
1
10  
100  
1000  
V
BR  
, BREAKDOWN VOLTAGE (VOLTS)  
Figure 4. Capacitance versus Breakdown  
Voltage  
http://onsemi.com  
4
1SMB5.0AT3 Series  
APPLICATION NOTES  
RESPONSE TIME  
minimum lead lengths and placing the suppressor device as  
close as possible to the equipment or components to be  
protected will minimize this overshoot.  
In most applications, the transient suppressor device is  
placed in parallel with the equipment or component to be  
protected. In this situation, there is a time delay associated  
with the capacitance of the device and an overshoot  
condition associated with the inductance of the device and  
the inductance of the connection method. The capacitive  
effect is of minor importance in the parallel protection  
scheme because it only produces a time delay in the  
transition from the operating voltage to the clamp voltage as  
shown in Figure 5.  
The inductive effects in the device are due to actual  
turn-on time (time required for the device to go from zero  
current to full current) and lead inductance. This inductive  
effect produces an overshoot in the voltage across the  
equipment or component being protected as shown in  
Figure 6. Minimizing this overshoot is very important in the  
application, since the main purpose for adding a transient  
suppressor is to clamp voltage spikes. The SMB series have  
a very good response time, typically < 1 ns and negligible  
inductance. However, external inductive effects could  
produce unacceptable overshoot. Proper circuit layout,  
Some input impedance represented by Z is essential to  
in  
prevent overstress of the protection device. This impedance  
should be as high as possible, without restricting the circuit  
operation.  
DUTY CYCLE DERATING  
The data of Figure 1 applies for non-repetitive conditions  
and at a lead temperature of 25°C. If the duty cycle increases,  
the peak power must be reduced as indicated by the curves  
of Figure 7. Average power must be derated as the lead or  
ambient temperature rises above 25°C. The average power  
derating curve normally given on data sheets may be  
normalized and used for this purpose.  
At first glance the derating curves of Figure 7 appear to be  
in error as the 10 ms pulse has a higher derating factor than  
the 10 µs pulse. However, when the derating factor for a  
given pulse of Figure 7 is multiplied by the peak power value  
of Figure 1 for the same pulse, the results follow the  
expected trend.  
http://onsemi.com  
5
1SMB5.0AT3 Series  
V
in  
(TRANSIENT)  
OVERSHOOT DUE TO  
INDUCTIVE EFFECTS  
V
V
V
in  
(TRANSIENT)  
V
L
V
L
V
in  
t
d
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT  
t
t
Figure 5.  
Figure 6.  
1
0.7  
0.5  
0.3  
0.2  
PULSE WIDTH  
10 ms  
0.1  
0.07  
0.05  
1 ms  
0.03  
0.02  
100 µs  
10 µs  
10 20  
D, DUTY CYCLE (%)  
0.01  
0.1 0.2  
0.5  
1
2
5
50 100  
Figure 7. Typical Derating Factor for Duty Cycle  
UL RECOGNITION  
The entire series has Underwriters Laboratory  
Recognition for the classification of protectors (QVGV2)  
under the UL standard for safety 497B and File #116110.  
Many competitors only have one or two devices recognized  
or have recognition in a non-protective category. Some  
competitors have no recognition at all. With the UL497B  
recognition, our parts successfully passed several tests  
including Strike Voltage Breakdown test, Endurance  
Conditioning, Temperature test, Dielectric  
Voltage-Withstand test, Discharge test and several more.  
Whereas, some competitors have only passed a  
flammability test for the package material, we have been  
recognized for much more to be included in their Protector  
category.  
http://onsemi.com  
6
1SMB5.0AT3 Series  
OUTLINE DIMENSIONS  
Transient Voltage Suppressors – Surface Mounted  
600 Watt Peak Power  
SMB  
DO–214AA  
CASE 403A–03  
ISSUE D  
S
A
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. D DIMENSION SHALL BE MEASURED WITHIN  
DIMENSION P.  
D
B
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
4.06  
3.30  
1.90  
1.96  
MAX  
4.57  
3.81  
2.41  
2.11  
0.152  
0.30  
1.27  
A
B
C
D
H
J
0.160  
0.130  
0.075  
0.077  
0.180  
0.150  
0.095  
0.083  
0.0020 0.0060 0.051  
0.006  
0.030  
0.012  
0.050  
0.15  
0.76  
K
P
S
C
0.020 REF  
0.51 REF  
0.205  
0.220  
5.21  
5.59  
H
J
K
P
0.089  
2.261  
0.108  
2.743  
inches  
mm  
0.085  
2.159  
SMB Footprint  
http://onsemi.com  
7
1SMB5.0AT3 Series  
Surmetic is a trademark of Semiconductor Components Industries, LLC.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,  
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be  
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.  
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or  
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold  
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable  
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.  
PUBLICATION ORDERING INFORMATION  
NORTH AMERICA Literature Fulfillment:  
CENTRAL/SOUTH AMERICA:  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)  
Email: ONlit–spanish@hibbertco.com  
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada  
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada  
Email: ONlit@hibbertco.com  
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –  
then Dial 866–297–9322  
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support  
Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)  
Toll Free from Hong Kong & Singapore:  
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada  
N. American Technical Support: 800–282–9855 Toll Free USA/Canada  
001–800–4422–3781  
EUROPE: LDC for ON Semiconductor – European Support  
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)  
Email: ONlit–german@hibbertco.com  
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)  
Email: ONlit–french@hibbertco.com  
Email: ONlit–asia@hibbertco.com  
JAPAN: ON Semiconductor, Japan Customer Focus Center  
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031  
Phone: 81–3–5740–2700  
Email: r14525@onsemi.com  
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)  
Email: ONlit@hibbertco.com  
ON Semiconductor Website: http://onsemi.com  
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781  
For additional information, please contact your local  
Sales Representative.  
*Available from Germany, France, Italy, UK, Ireland  
1SMB5.0AT3/D  
厂商 型号 描述 页数 下载

Carling Technologies

 		1SM-WMSP1-R2-M6KE [ Rocker Switch, SPDT, Latched, 0.02A, 20VDC, Solder Terminal, Narrow Rocker Type Actuator, Surface Mount-right Angle ] 5 页

Carling Technologies

 		1SM-WMSP1-R2-M6KET/R [ Rocker Switch, SPDT, Latched, 0.02A, 20VDC, Solder Terminal, Narrow Rocker Type Actuator, Surface Mount-right Angle ] 5 页

Carling Technologies

 		1SM-WMSP1-R2-M6PE [ Rocker Switch, SPDT, Latched, 3A, 28VDC, Solder Terminal, Narrow Rocker Type Actuator, Surface Mount-right Angle ] 5 页

Carling Technologies

 		1SM-WMSP1-R2-S6GET/R [ Rocker Switch, SPDT, Latched, 3A, 28VDC, Solder Terminal, Narrow Rocker Type Actuator, Surface Mount-right Angle ] 5 页

Carling Technologies

 		1SM-WMSP1-R2-S6QE [ Rocker Switch, SPDT, Latched, 3A, 28VDC, Solder Terminal, Narrow Rocker Type Actuator, Surface Mount-right Angle ] 5 页

Carling Technologies

 		1SM-WMSP1-R2-S7GE [ Rocker Switch, SPDT, Latched, 3A, 28VDC, Solder Terminal, Narrow Rocker Type Actuator, Surface Mount-right Angle, ] 5 页

Carling Technologies

 		1SM-WMSP1-R2-S7QE [ Rocker Switch, SPDT, Latched, 3A, 28VDC, Solder Terminal, Narrow Rocker Type Actuator, Surface Mount-right Angle ] 5 页

Carling Technologies

 		1SM-WMSP2-R2-M6GE [ Rocker Switch, SPDT, Momentary, 3A, 28VDC, Solder Terminal, Narrow Rocker Type Actuator, Surface Mount-right Angle ] 5 页

Carling Technologies

 		1SM-WMSP2-R2-M6PE [ Rocker Switch, SPDT, Momentary, 3A, 28VDC, Solder Terminal, Narrow Rocker Type Actuator, Surface Mount-right Angle ] 5 页

Carling Technologies

 		1SM-WMSP2-R2-M6PET/R [ Rocker Switch, SPDT, Momentary, 3A, 28VDC, Solder Terminal, Narrow Rocker Type Actuator, Surface Mount-right Angle ] 5 页

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