Product specification
RYC002N05
0.9V Drive Nch MOSFET
Structure
Dimensions (Unit : mm)
SST3
<SOT-23>
Silicon N-channel MOSFET
Features
1) High speed switing.
2) Small package(SST3).
3)Ultra low voltage drive(0.9V drive).
Abbreviated symbol : QJ
Application
Switching
Packaging specifications
Inner circuit
(3)
Package
Taping
T316
3000
Type
Code
Basic ordering unit (pieces)
∗1
RYC002N05
∗2
Absolute maximum ratings (Ta = 25C)
Parameter Symbol
Drain-source voltage
(2)
(1)
(1) Source
(2) Gate
(3) Drain
Limits
50
Unit
V
∗1 BODY DIODE
∗2 ESD PROTECTION DIODE
VDSS
VGSS
ID
Gate-source voltage
8
V
Continuous
Pulsed
200
800
150
mA
mA
mA
mA
mW
C
Drain current
*1
IDP
Continuous
Pulsed
IS
Source current
(Body Diode)
*1
*2
ISP
800
Power dissipation
PD
200
Channel temperature
Tch
Tstg
150
Range of storage temperature
*1 Pw10s, Duty cycle1%
55 to 150
C
*2 Each terminal mounted on a recommended land.
Thermal resistance
Parameter
Symbol
Rth (ch-a)*
Limits
625
Unit
Channel to Ambient
C / W
* Each terminal mounted on a recommended land.
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