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SZNUP2105LT1G

型号：

SZNUP2105LT1G

描述：

双线CAN总线保护器[ Dual Line CAN Bus Protector ]

品牌：

ONSEMI[ ONSEMI ]

页数：

8 页

PDF大小：

148 K

下载PDF手册
NUP2105L, SZNUP2105L  
Dual Line CAN  
Bus Protector  
The SZ/NUP2105L has been designed to protect the CAN  
transceiver in high−speed and fault tolerant networks from ESD and  
other harmful transient voltage events. This device provides  
bidirectional protection for each data line with a single compact  
SOT−23 package, giving the system designer a low cost option for  
improving system reliability and meeting stringent EMI requirements.  
http://onsemi.com  
SOT−23  
DUAL BIDIRECTIONAL  
VOLTAGE SUPPRESSOR  
350 W PEAK POWER  
Features  
350 W Peak Power Dissipation per Line (8 x 20 msec Waveform)  
Low Reverse Leakage Current (< 100 nA)  
Low Capacitance High−Speed CAN Data Rates  
IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4  
− IEC 61000−4−4 (EFT): 40 A – 5/50 ns  
− IEC 61000−4−5 (Lighting) 8.0 A (8/20 ms)  
ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 9.5 A  
(1 x 50 ms)  
SOT−23  
CASE 318  
STYLE 27  
ISO 7637−3, Repetitive Electrical Fast Transient (EFT)  
EMI Surge Pulses, 50 A (5 x 50 ns)  
Flammability Rating UL 94 V−0  
PIN 1  
PIN 3  
PIN 2  
AEC−Q101 Qualified and PPAP Capable  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements  
Pb−Free Packages are Available*  
CAN_H  
CAN  
Transceiver  
CAN Bus  
CAN_L  
NUP2105L  
Applications  
Industrial Control Networks  
Smart Distribution Systems (SDS )  
DeviceNet  
MARKING DIAGRAM  
Automotive Networks  
Low and High−Speed CAN  
Fault Tolerant CAN  
27EMG  
G
1
27E  
M
= Device Code  
= Date Code  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
January, 2012 − Rev. 5  
NUP2105L/D  
NUP2105L, SZNUP2105L  
MAXIMUM RATINGS (T = 25C, unless otherwise specified)  
J
Symbol  
Rating  
Value  
Unit  
PPK  
Peak Power Dissipation  
W
8 x 20 ms Double Exponential Waveform (Note 1)  
Operating Junction Temperature Range  
Storage Temperature Range  
350  
T
T
−55 to 150  
−55 to 150  
260  
C  
C  
C  
J
J
L
T
Lead Solder Temperature (10 s)  
ESD  
Human Body model (HBM)  
Machine Model (MM)  
IEC 61000−4−2 Specification (Contact)  
16  
400  
30  
kV  
V
kV  
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit  
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,  
damage may occur and reliability may be affected.  
1. Non−repetitive current pulse per Figure 1.  
ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified)  
J
Symbol  
Parameter  
Reverse Working Voltage  
Breakdown Voltage  
Test Conditions  
Min  
24  
26.2  
−
Typ  
−
Max  
−
Unit  
V
V
RWM  
(Note 2)  
I = 1 mA (Note 3)  
V
BR  
−
32  
V
T
I
R
Reverse Leakage Current  
Clamping Voltage  
V
RWM  
= 24 V  
15  
−
100  
40  
nA  
V
V
C
I
PP  
= 5 A (8 x 20 ms Waveform)  
−
(Note 4)  
V
C
Clamping Voltage  
I
= 8 A (8 x 20 ms Waveform)  
−
−
44  
V
PP  
(Note 4)  
I
Maximum Peak Pulse Current  
Capacitance  
8 x 20 ms Waveform (Note 4)  
−
−
−
−
8.0  
30  
A
PP  
CJ  
V
R
= 0 V, f = 1 MHz (Line to GND)  
pF  
2. TVS devices are normally selected according to the working peak reverse voltage (V  
or continuous peak operating voltage level.  
), which should be equal or greater than the DC  
RWM  
3. V is measured at pulse test current I .  
BR  
T
4. Pulse waveform per Figure 1.  
ORDERING INFORMATION  
Device  
†
Package  
Shipping  
NUP2105LT1  
SOT−23  
3,000 / Tape & Reel  
3,000 / Tape & Reel  
NUP2105LT1G  
SOT−23  
(Pb−Free)  
SZNUP2105LT1G  
SOT−23  
(Pb−Free)  
3,000 / Tape & Reel  
NUP2105LT3  
SOT−23  
10,000 / Tape & Reel  
10,000 / Tape & Reel  
NUP2105LT3G  
SOT−23  
(Pb−Free)  
SZNUP2105LT3G  
SOT−23  
(Pb−Free)  
10,000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
2
 
NUP2105L, SZNUP2105L  
TYPICAL PERFORMANCE CURVES  
(T = 25C unless otherwise noted)  
J
12.0  
110  
100  
90  
WAVEFORM  
PARAMETERS  
t = 8 ms  
PULSE WAVEFORM  
8 x 20 ms per Figure 1  
10.0  
8.0  
6.0  
4.0  
r
80  
t = 20 ms  
d
c−t  
70  
60  
50  
t = I /2  
d
PP  
40  
30  
20  
10  
0
2.0  
0.0  
0
5
10  
15  
t, TIME (ms)  
20  
25  
30  
25  
30  
35  
40  
45  
50  
V , CLAMPING VOLTAGE (V)  
C
Figure 1. Pulse Waveform, 8 20 ms  
Figure 2. Clamping Voltage vs Peak Pulse Current  
50  
35  
30  
25  
20  
f = 1.0 MHz, Line to Ground  
45  
40  
35  
30  
25  
20  
15  
10  
5
125C  
25C  
25C  
65C  
−40C  
15  
10  
−55C  
T = +150C  
A
0
0
2
4
6
8
10  
20  
22  
24  
26  
28  
30  
32  
34  
V , REVERSE VOLTAGE (V)  
R
V
BR  
, VOLTAGE (V)  
Figure 4. VBR versus IT Characteristics  
Figure 3. Typical Junction Capacitance vs  
Reverse Voltage  
120  
100  
80  
60  
40  
20  
0
25  
20  
15  
10  
5
−55C  
+25C  
T = +150C  
A
+65C  
0
0
2
4
6
8
10  
12  
−60  
−30  
0
30  
60  
90  
120  
150 180  
I , LEAKAGE CURRENT (nA)  
L
TEMPERATURE (C)  
Figure 5. IR versus Temperature Characteristics  
Figure 6. Temperature Power Dissipation Derating  
http://onsemi.com  
3
 
NUP2105L, SZNUP2105L  
APPLICATIONS  
Background  
ESD. The NUP2105L has been tested to EMI and ESD  
levels that exceed the specifications of popular high speed  
CAN networks.  
The Controller Area Network (CAN) is a serial  
communication protocol designed for providing reliable  
high speed data transmission in harsh environments. TVS  
diodes provide a low cost solution to conducted and radiated  
Electromagnetic Interference (EMI) and Electrostatic  
Discharge (ESD) noise problems. The noise immunity level  
and reliability of CAN transceivers can be easily increased  
by adding external TVS diodes to prevent transient voltage  
failures.  
CAN Physical Layer Requirements  
Table 1 provides a summary of the system requirements  
for a CAN transceiver. The ISO 11898−2 physical layer  
specification forms the baseline for most CAN systems. The  
transceiver requirements for the Honeywell Smart  
Distribution  
Systems  
(SDS )  
and  
Rockwell  
(Allen−Bradley) DeviceNethigh speed CAN networks  
are similar to ISO 11898−2. The SDS and DeviceNet  
transceiver requirements are similar to ISO 11898−2;  
however, they include minor modifications required in an  
industrial environment.  
The NUP2105L provides a transient voltage suppression  
solution for CAN data communication lines. The  
NUP2105L is a dual bidirectional TVS device in a compact  
SOT−23 package. This device is based on Zener technology  
that optimizes the active area of a PN junction to provide  
robust protection against transient EMI surge voltage and  
Table 1. Transceiver Requirements for High−Speed CAN Networks  
Parameter  
ISO 11898−2  
SDS Physical Layer  
Specification 2.0  
DeviceNet  
Min / Max Bus Voltage  
(12 V System)  
−3.0 V / 16 V  
11 V / 25 V  
Same as ISO 11898−2  
Common Mode Bus Voltage  
CAN_L:  
−2.0 V (min)  
2.5 V (nom)  
CAN_H:  
Same as ISO 11898−2  
Same as ISO 11898−2  
2.5 V (nom)  
7.0 V (max)  
Transmission Speed  
ESD  
1.0 Mb/s @ 40 m  
125 kb/s @ 500 m  
Same as ISO 11898−2  
500 kb/s @ 100 m  
125 kb/s @ 500 m  
Not specified, recommended  
w $8.0 kV (contact)  
Not specified, recommended  
w $8.0 kV (contact)  
Not specified, recommended  
w $8.0 kV (contact)  
EMI Immunity  
ISO 7637−3, pulses ‘a’ and ‘b’  
IEC 61000−4−4 EFT  
Same as ISO 11898−2  
Popular Applications  
Automotive, Truck, Medical  
and Marine Systems  
Industrial Control Systems  
Industrial Control Systems  
http://onsemi.com  
4
 
NUP2105L, SZNUP2105L  
EMI Specifications  
61000−4 and ISO 7637 tests are similar; however, the IEC  
standard was created as a generic test for any electronic  
system, while the ISO 7637 standard was designed for  
vehicular applications. The IEC61000−4−4 Electrical Fast  
Transient (EFT) specification is similar to the ISO 7637−1  
pulse 1 and 2 tests and is a requirement of SDS CAN  
systems. The IEC 61000−4−5 test is used to define the power  
absorption capacity of a TVS device and long duration  
voltage transients such as lightning. Table 2 provides a  
summary of the ISO 7637 and IEC 61000−4−X test  
specifications. Table 3 provides the NUP2105L’s ESD  
test results.  
The EMI protection level provided by the TVS device can  
be measured using the International Organization for  
Standardization (ISO) 7637−1 and −3 specifications that are  
representative of various noise sources. The ISO 7637−1  
specification is used to define the susceptibility to coupled  
transient noise on a 12 V power supply, while ISO 7637−3  
defines the noise immunity tests for data lines. The ISO 7637  
tests also verify the robustness and reliability of a design by  
applying the surge voltage for extended durations.  
The IEC 61000−4−X specifications can also be used to  
quantify the EMI immunity level of a CAN system. The IEC  
Table 2. ISO 7637 and IEC 61000−4−X Test Specifications  
Test  
Waveform  
Test Specifications  
NUP2105L Test  
= 1.75 A  
Simulated Noise Source  
V = 0 to −100 V  
I
DUT in parallel with  
inductive load that is  
disconnected from power  
supply.  
s
max  
I
= 10 A  
V
_
= 31 V  
max  
clamp max  
t
= 5000 pulses  
duration  
Pulse 1  
t
= 5000 pulses  
duration  
R = 10 W, t = 1.0 ms,  
i
r
t
= 2000 ms, t = 2.5 s,  
d_10%  
1
ISO 7637−1  
t = 200 ms, t = 100 ms  
2
3
V = 0 to +100 V  
I
= 9.5 A  
DUT in series with inductor  
that is disconnected.  
12 V Power Supply Lines  
s
max  
I
= 10 A  
V
_
= 33 V  
max  
clamp max  
duration  
t
= 5000 pulses  
Pulse 2  
t
= 5000 pulses  
duration  
Ri = 10 W, t = 1.0 ms,  
r
t
= 50 ms, t = 2.5 s,  
d_10%  
1
t = 200 ms  
2
V = −60 V  
max  
I
= 50 A  
Switching noise of inductive  
loads.  
s
max  
_
Pulse ‘a’  
Pulse ‘b’  
V
= 40 V  
I
= 1.2 A  
clamp max  
duration  
t
= 60 minutes  
ISO 7637−3  
t
= 10 minutes  
duration  
R = 50 W, t = 5.0 ns,  
i
r
V = +40 V  
Data Line EFT  
s
max  
t
= 0.1 ms, t = 100 ms,  
d_10%  
1
I
= 0.8 A  
t = 10 ms, t = 90 ms  
2
3
t
= 10 minutes  
duration  
V
= 2.0 kV  
= 40 A  
(Note 2)  
Switching noise of inductive  
loads.  
open circuit  
short circuit  
I
(Level 4 = Severe Industrial  
Environment)  
IEC 61000−4−4  
R = 50 W, t < 5.0 ns,  
i
r
Data Line EFT  
t
= 50 ns, t  
= 15 ms,  
d_50%  
burst  
f
= 2.0 to 5.0 kHz,  
repeat  
burst  
t
= 300 ms  
= 1 minute  
t
duration  
V
= 1.2 x 50 ms,  
short circuit  
Lightning, nonrepetitive  
power line and load  
switching  
open circuit  
I
= 8 x 20 ms  
IEC 61000−4−5  
R = 50 W  
i
1. DUT = device under test.  
2. The EFT immunity level was measured with test limits beyond the IEC 61000−4−4 test, but with the more severe test conditions of  
ISO 7637−3.  
Table 3. NUP2105L ESD Test Results  
ESD Specification  
Human Body Model  
Test  
Test Level  
Pass / Fail  
Contact  
Contact  
16 kV  
Pass  
Pass  
Pass  
30 kV (Note 3)  
30 kV (Note 3)  
IEC 61000−4−2  
Non−contact (Air Discharge)  
3. Test equipment maximum test voltage is 30 kV.  
http://onsemi.com  
5
 
NUP2105L, SZNUP2105L  
TVS Diode Protection Circuit  
voltage of the diode that is reversed biased, plus the diode  
drop of the second diode that is forwarded biased.  
TVS diodes provide protection to a transceiver by  
clamping a surge voltage to a safe level. TVS diodes have  
high impedance below and low impedance above their  
breakdown voltage. A TVS Zener diode has its junction  
optimized to absorb the high peak energy of a transient  
event, while a standard Zener diode is designed and  
specified to clamp a steady state voltage.  
CAN_H  
CAN  
Transceiver  
CAN Bus  
CAN_L  
NUP2105L  
Figure 7 provides an example of a dual bidirectional  
TVS diode array that can be used for protection with the  
high−speed CAN network. The bidirectional array is created  
from four identical Zener TVS diodes. The clamping  
voltage of the composite device is equal to the breakdown  
Figure 7. High−Speed and Fault Tolerant CAN TVS  
Protection Circuit  
http://onsemi.com  
6
 
NUP2105L, SZNUP2105L  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AP  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
D
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
SEE VIEW C  
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
H
E
MILLIMETERS  
INCHES  
E
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
MAX  
MIN  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
c
1
2
b
0.25  
e
q
H
q
2.10  
0  
2.40  
−−−  
2.64  
10  
0.083  
0  
0.094  
−−−  
0.104  
10  
A
E
L
STYLE 27:  
A1  
L1  
VIEW C  
PIN 1. CATHODE  
2. CATHODE  
3. CATHODE  
SOLDERING FOOTPRINT  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
0.8  
0.031  
Honeywell and SDS are registered trademarks of Honeywell International Inc.  
DeviceNet is a trademark of Rockwell Automation.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
NUP2105L/D  
Mouser Electronics  
Authorized Distributor  
Click to View Pricing, Inventory, Delivery & Lifecycle Information:  
ON Semiconductor:  
SZNUP2105LT1G SZNUP2105LT3G NUP2105LT1 NUP2105LT1G NUP2105LT3G  
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