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6T10AI-CW

型号：

6T10AI-CW

描述：

三端双向可控硅，6A无缓冲器，逻辑层次和水平[ TRIACs, 6A Snubberless, Logic Level and Standard ]

品牌：

NELLSEMI[ NELL SEMICONDUCTOR CO., LTD ]

页数：

6 页

PDF大小：

326 K

下载PDF手册
RoHS  
6T Series RoHS  
SEMICONDUCTOR  
TRIACs, 6A  
Snubberless, Logic Level and Standard  
MAIN FEATURES  
2
2
SYMBOL  
VALUE  
UNIT  
A
IT(RMS)  
6
2
1
1
3
2
VDRM/VRRM  
IGT(Q1)  
V
600 to 1000  
5 to 50  
3
TO-251 (I-PAK)  
TO-252 (D-PAK)  
mA  
(6TxxF)  
(6TxxG)  
DESCRIPTION  
A2  
The 6T triac series is suitable for general purpose AC  
switching. They can be used as an ON/OFF function in  
applications such as static relays, heating regulation,  
induction motor starting circuits... or for phase control  
operation in light dimmers, motor speed controllers,...  
1
2
3
A1  
A2  
G
TO-220AB (non-Insulated)  
TO-220AB (lnsulated)  
The snubberless and logic level versions are specially  
recommended for use on inductive loads, thanks to their  
high commutation performances.  
(6TxxA)  
(6TxxAI)  
By using an internal ceramic pad, the 6T series provides  
voltage insulated tab (rated at 2500VRMS) complying  
with UL standards (File ref. :E320098)  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUE  
UNIT  
Tc = 110ºC  
TO-251/TO-252/TO-220AB  
TO-220AB insulated  
F =50 Hz  
RMS on-state current (full sine wave)  
IT(RMS)  
6
A
Tc = 105ºC  
t = 20 ms  
60  
63  
21  
Non repetitive surge peak on-state  
ITSM  
A
current (full cycle, T initial = 25°C)  
j
F =60 Hz  
t = 16.7 ms  
I2t  
I2t Value for fusing  
A2s  
t
= 10 ms  
p
Critical rate of rise of on-state current  
IG = 2xlGT, tr≤100ns  
Tj =125ºC  
Tj =125ºC  
A/µs  
F =100 Hz  
50  
dI/dt  
Tp =20 µs  
Tj =125ºC  
Peak gate current  
IGM  
4
1
A
PG(AV)  
Average gate power dissipation  
Storage temperature range  
Operating junction temperature range  
W
Tstg  
Tj  
- 40 to + 150  
- 40 to + 125  
ºC  
www.nellsemi.com  
Page 1 of 6  
RoHS  
6T Series RoHS  
SEMICONDUCTOR  
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)  
SNUBBERLESS and Logic level (3 quadrants)  
6Txxxx  
Unit  
QUADRANT  
SYMBOL  
TEST CONDITIONS  
TW  
SW  
CW  
BW  
(1)  
IGT  
I - II - III  
I - II - III  
MAX.  
MAX.  
05  
10  
35  
50  
mA  
V
VD = 12 V, RL = 30Ω  
VGT  
1.3  
0.2  
VD = VDRM, RL = 3.3KΩ  
Tj = 125°C  
VGD  
MIN.  
MAX.  
MAX.  
MIN.  
I - II - III  
V
(2)  
IT = 200 mA  
IH  
mA  
15  
25  
30  
40  
55  
10  
I - III  
50  
60  
70  
80  
10  
15  
IG = 1.2 IGT  
IL  
mA  
II  
dV/dt(2)  
VD = 67% VDRM gate open ,Tj = 125°C  
,
V/µs  
20  
40  
400  
1000  
(dV/dt)c = 0.1 V/µs  
(dV/dt)c = 10 V/µs  
-
-
-
-
Tj = 125°C  
Tj = 125°C  
Tj = 125°C  
3.5  
2.4  
-
2.7  
1.2  
-
(dI/dt)c(2)  
MIN.  
A/ms  
Without snubber  
3.5  
5.3  
ELECTRICAL CHARACTERISTICS (TJ= 25 ºC unless otherwise specified)  
Standard (4 quadrants)  
6Txxxx  
TEST CONDITIONS  
SYMBOL  
UNIT  
QUADRANT  
C
B
25  
50  
50  
I - II - III  
(1)  
IGT  
MAX.  
mA  
VD = 12 V, RL = 30Ω  
IV  
100  
VGT  
VGD  
1.3  
0.2  
V
V
ALL  
ALL  
VD = VDRM, RL = 3.3KΩ, Tj = 125°C  
IT = 200 mA  
(2)  
mA  
IH  
MAX.  
MAX.  
25  
50  
I - III - IV  
40  
50  
IL  
IG = 1.2 IGT  
mA  
80  
100  
II  
dV/dt(2)  
VD = 67% VDRM, gate open, Tj = 125°C  
V/µs  
V/µs  
MIN.  
MIN.  
200  
5
400  
10  
(dV/dt)c(2)  
(dI/dt)c = 2.7 A/ms,  
Tj = 125°C  
STATIC CHARACTERISTICS  
SYMBOL  
TEST CONDITIONS  
UNIT  
V
VALUE  
1.55  
0.85  
60  
(2)  
ITM = 8.5 A, tP = 380 µs  
Threshold voltage  
Tj = 25°C  
VTM  
MAX.  
MAX.  
MAX.  
(2)  
Tj = 125°C  
Vt0  
V
(2)  
Dynamic resistance  
Rd  
Tj = 125°C  
Tj = 25°C  
mΩ  
µA  
5
IDRM  
IRRM  
VDRM = VRRM  
MAX.  
Tj = 125°C  
1
mA  
Note 1: Minimum lGT is guaranted at 5% of lGT max.  
Note 2: For both polarities of A2 referenced to A1.  
www.nellsemi.com  
Page 2 of 6  
RoHS  
6T Series RoHS  
SEMICONDUCTOR  
THERMAL RESISTANCE  
UNIT  
SYMBOL  
VALUE  
TO-220AB, TO-251, TO-252  
TO-220AB Insulated  
TO-220AB, TO-251, TO-252  
TO-220AB Insulated  
1.8  
2.7  
Rth(j-c)  
Rth(j-a)  
Junction to case (AC)  
°C/W  
Junction to ambient  
60  
°C/W  
PRODUCT SELECTOR  
VOLTAGE (xx)  
PART NUMBER  
SENSITIVITY  
TYPE  
PACKAGE  
1000 V  
600 V  
V
800 V  
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
50 mA  
50 mA  
25 mA  
35 mA  
10 mA  
5 mA  
Standard  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
TO-220AB  
I-PAK  
6TxxA-B/6TxxAl-B  
6TxxA-BW/6TxxAl-BW  
6TxxA-C/6TxxAl-C  
V
V
Snubberless  
V
V
Standard  
Snubberless  
Logic level  
Logic level  
V
V
6TxxA-CW/6TxxAl-CW  
6TxxA-SW/6TxxAl-SW  
V
V
V
6TxxA-TW/6TxxAI-TW  
V
V
V
50 mA  
50 mA  
35 mA  
35 mA  
10 mA  
10 mA  
50 mA  
50 mA  
25 mA  
25 mA  
Snubberless  
Snubberless  
Snubberless  
6TxxF-BW  
6TxxG-BW  
6TxxF-CW  
V
V
D-PAK  
V
V
I-PAK  
V
V
Snubberless  
Logic level  
Logic level  
D-PAK  
6TxxG-CW  
6TxxF-SW  
V
V
I-PAK  
V
D-PAK  
6TxxG-SW  
6TxxF-B  
V
V
V
Standard  
Standard  
Standard  
Standard  
I-PAK  
V
V
D-PAK  
6TxxG-B  
6TxxF-C  
V
V
I-PAK  
V
D-PAK  
6TxxG-C  
V
ORDERING INFORMATION  
,
WEIGHT  
2.0g  
PACKAGE  
DELIVERY MODE  
ORDERING TYPE  
MARKING  
BASE Q TY  
6TxxA-yy  
6TxxA-yy  
TO-220AB  
50  
50  
Tube  
Tube  
6TxxAI-yy  
6TxxAI-yy  
TO-220AB (insulated)  
2.3g  
6TxxF-yy  
6TxxG-yy  
6TxxF-yy  
6TxxG-yy  
0.40g  
0.38g  
TO-251(I-PAK)  
TO-252(D-PAK)  
80  
80  
Tube  
Tube  
Note: xx = voltage, yy = sensitivity  
www.nellsemi.com  
Page 3 of 6  
RoHS  
6T Series RoHS  
SEMICONDUCTOR  
ORDERING INFORMATION SCHEME  
-
BW  
6
T 06  
A
Current  
6 = 6A  
Triac series  
Voltage  
06 = 600V  
08 = 800V  
10 = 1000V  
Package type  
A = TO-220AB (non-insulated)  
AI = TO-220AB ( insulated)  
AF= TO-220F(ISOWAT TO-220AB, insulated)  
F = TO-251 (I-PAK)  
G = TO-252 (D-PAK)  
IGT Sensitivity  
B = 50mA Standard  
C = 25mA Standard  
SW = 10mA Logic Level  
BW = 50mA Snubberless  
CW = 35mA Snubberless  
TW = 5mA Logic Level  
Fig.1 Maximum power dissipation versus RMS on-state  
current (full cycle)  
Fig.2 RMS on-state current versus case temperature  
(full cycle)  
P(W)  
I
(A)  
T(RMS)  
8
7
6
5
4
3
2
7
6
5
4
3
2
TO-220AB  
(Insulated)  
TO-251/TO-252  
TO-220AB  
1
1
TC(°C)  
I
(A)  
T(RMS)  
0
0
0
25  
50  
75  
100  
125  
0
1
2
3
4
5
6
Fig.4 On-state characteristics (maximum values).  
Fig.3 Relative variation of thermal impedance  
versus pulse duration.  
I
(A)  
TM  
K=[Z /R  
]
th th  
100  
10  
1E+0  
1E-1  
1E-2  
Tj = Tj max.  
Tj max.  
Z
th(j-c)  
Vt0 = 0.85V  
Rd = 60 mΩ  
Z
th(j-a)  
tp(s)  
V
(V)  
TM  
1
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2  
5E+2  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
www.nellsemi.com  
Page 4 of 6  
RoHS  
6T Series RoHS  
SEMICONDUCTOR  
Fig.5 Surge peak on-state current versus number  
of cycles.  
Fig.6 Non-repetitive surge peak on-state current  
for a sinusoidal pulse with width tp < 10ms.  
and corresponding value of l2t.  
I
(A)  
TSM  
I
(A), I2t (A2s)  
TSM  
70  
60  
50  
40  
30  
20  
10  
0
1000  
100  
10  
Tj initial=25°C  
t=20ms  
One cycle  
dI/dt limitation:  
50A/µs  
Non repetitive  
j
ITSM  
T
initial=25°C  
Repetitive  
=105°C  
T
c
2
I t  
Number of cycles  
tp(ms)  
1
10  
100  
1000  
0.01  
0.10  
1.00  
10.00  
Fig.8 Relative variation of critical rate of decrease  
Fig.7 Relative variation of gate trigger current,holding  
current and latching current versus junction  
temperature (typical values).  
of main current versus (dV/dt)c (typical values).  
Snubberless & Logic Level Types  
I
,I ,I [T ] / I ,I ,I [T =25°C ]  
GT  
H
L
j
GT  
H
L
j
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
IGT  
TW  
BW/CW  
I
H
& IL  
SW  
(dV/dt)c (V/µs)  
Tj(°C)  
0.1  
1.0  
10.0  
100.0  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
Fig.9 Relative variation of critical rate of decrease  
Fig.10 Relative variation of critical rate decrease of  
main current versus junction temperature .  
of main current versus (dV/dt)C (typical values)  
(Standard types).  
(dI/dt)c [T ] / (dI/dt)c [T specified]  
j
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c  
j
6
5
4
3
2
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
C
B
1
(dV/dt)c (V/µs)  
Tj(°C)  
0
0.1  
1.0  
10.0  
100.0  
0
25  
50  
75  
100  
125  
www.nellsemi.com  
Page 5 of 6  
RoHS  
6T Series RoHS  
SEMICONDUCTOR  
Case Style  
TO-220AB  
10.54 (0.415) MAX.  
4.70 (0.185)  
4.44 (0.1754)  
1.39 (0.055)  
1.14 (0.045)  
9.40 (0.370)  
9.14 (0.360)  
3.91 (0.154)  
3.74 (0.148)  
2.87 (0.113)  
2.62 (0.103)  
3.68 (0.145)  
3.43 (0.135)  
15.32 (0.603)  
14.55 (0.573)  
RoHS  
16.13 (0.635)  
15.87 (0.625)  
PIN  
8.89 (0.350)  
8.38 (0.330)  
1
2
3
4.06 (0.160)  
3.56 (0.140)  
29.16 (1.148)  
28.40 (1.118)  
2.79 (0.110)  
2.54 (0.100)  
1.45 (0.057)  
1.14 (0.045)  
14.22 (0.560)  
13.46 (0.530)  
2.67 (0.105)  
2.41 (0.095)  
0.90 (0.035)  
0.70 (0.028)  
5.20 (0.205)  
4.95 (0.195)  
2.65 (0.104)  
2.45 (0.096)  
0.56 (0.022)  
0.36 (0.014)  
TO-251  
(I-PAK)  
6.6(0.26)  
6.4(0.52)  
2.4(0.095)  
2.2(0.086)  
1.5(0.059)  
0.62(0.024)  
0.48(0.019)  
5.4(0.212)  
5.2(0.204)  
1.37(0.054)  
6.2(0.244)  
6(0.236)  
4T  
16.3(0.641)  
15.9(0.626)  
1.9(0.075)  
1.8(0.071)  
9.4(0.37)  
9(0.354)  
0.85(0.033)  
0.76(0.03)  
0.65(0.026)  
0.55(0.021)  
4.6(0.181)  
4.4(0.173)  
0.62(0.024)  
0.45(0.017)  
TO-252  
(D-PAK)  
2.4(0.095)  
2.2(0.086)  
6.6(0.259)  
6.4(0.251)  
1.5(0.059)  
5.4(0.212)  
5.2(0.204)  
0.62(0.024)  
0.48(0.019)  
1.37(0.054)  
2
6.2(0.244)  
6(0.236)  
9.35(0.368)  
10.1(0.397)  
1
2
3
0.89(0.035)  
0.62(0.024)  
0.45(0.017)  
0.64(0.025)  
1.14(0.045)  
0.76(0.030)  
2.28(0.090)  
4.57(0.180)  
www.nellsemi.com  
Page 6 of 6  
厂商 型号 描述 页数 下载

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