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IZ74HC21A

型号:

IZ74HC21A

描述:

两个4输入与门[ Dual 4-Input AND Gate ]

品牌:

INTEGRAL[ INTEGRAL CORP. ]

页数:

5 页

PDF大小:

42 K

TECHNICAL DATA  
IN74HC21A  
Dual 4-Input AND Gate  
The IN74HC21A is high-speed Si-gate CMOS device and is pin  
compatible with pullup resistors with low power Schottky TTL  
(LSTTL). The device provide the Dual 4-input AND function.  
·
·
·
·
Outputs Directly Interface to CMOS, NMOS, and TTL  
Operating Voltage Range: 2.0 to 6.0 V  
Low Input Current: 1.0 mA  
High Noise Immunity Characteristic of CMOS Devices  
ORDERING INFORMATION  
IN74HC21AN  
IN74HC21AD  
Plastic  
SOIC  
IZ74HC21A Chip  
TA = -55° to 125° C for all packages  
LOGIC DIAGRAM  
PIN ASSIGNMENT  
A1  
V
A1  
B1  
1
2
3
4
5
6
7
14  
CC  
B1  
C1  
13 D2  
Y1  
C2  
12  
11  
10  
9
C1  
D1  
B2  
A2  
Y1  
A2  
B2  
Y2  
GND  
8
Y2  
C2  
D2  
FUNCTION TABLE  
Inputs  
Output  
A
B
Ñ
D
Y
L
X
X
X
X
L
X
X
L
X
X
X
L
L
L
L
L
PIN 14 =VCC  
PIN 7 = GND  
X
X
X
H
H
H
H
H
X = don’t care  
INTEGRAL  
1
IN74HC21A  
MAXIMUM RATINGS*  
Symbol  
Parameter  
Value  
-0.5 to +7.0  
-1.5 to VCC +1.5  
-0.5 to VCC +0.5  
±20  
Unit  
V
VCC  
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
V
IN  
V
VOUT  
IIN  
V
mA  
mA  
mA  
mW  
IOUT  
ICC  
DC Output Current, per Pin  
±25  
DC Supply Current, VCC and GND Pins  
±50  
PD  
Power Dissipation in Still Air, Plastic DIP**  
SOIC Package**  
750  
500  
Tstg  
TL  
Storage Temperature  
-65 to +150  
260  
°C  
°C  
Lead Temperature, 1 mm from Case for 10 Seconds  
(Plastic DIP or SOIC Package)  
*Maximum Ratings are those values beyond which damage to the device may occur.  
Functional operation should be restricted to the Recommended Operating Conditions.  
**Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C  
SOIC Package: : - 7 mW/°C from 65° to 125°C  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
VCC  
Parameter  
Min  
2.0  
0
Max  
6.0  
Unit  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage, Output Voltage (Referenced to GND)  
Operating Temperature, All Package Types  
V , VOUT  
IN  
VCC  
V
TA  
-55  
+125  
°C  
ns  
tr, tf  
Input Rise and Fall Time (Figure 1)  
VCC =2.0 V  
VCC =4.5 V  
VCC =6.0 V  
0
0
0
1000  
500  
400  
This device contains protection circuitry to guard against damage due to high static voltages or electric  
fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages  
to this high-impedance circuit. For proper operation, V and VOUT should be constrained to the range GND£(V or  
IN  
IN  
VOUT)£VCC.  
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused  
outputs must be left open.  
INTEGRAL  
2
IN74HC21A  
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)  
Symbol  
Parameter  
Test Conditions  
VCC  
V
Guaranteed Limit  
Unit  
25 °C  
to  
£85  
°C  
£125  
°C  
-55°C  
V
Minimum High-Level  
Input Voltage  
2.0  
3.0  
4.5  
6.0  
1.5  
2.1  
3.15  
4.2  
1.5  
2.1  
3.15  
4.2  
1.5  
2.1  
3.15  
4.2  
V
V
V
IH  
V
IL  
Maximum Low -Level  
Input Voltage  
2.0  
3.0  
4.5  
6.0  
0.5  
0.9  
1.35  
1.8  
0.5  
0.9  
1.35  
1.8  
0.5  
0.9  
1.35  
1.8  
VOH  
Minimum High-Level  
Output Voltage  
V =V or V  
IL  
êIOUTê = -50 mA  
2.0  
3.0  
4.5  
6.0  
1.92  
2.92  
4.42  
5.92  
1.9  
2.9  
4.4  
5.9  
1.9  
2.9  
4.4  
5.9  
IN  
IH  
V =V or V  
IL  
êIOUTê = -2.4 mÀ  
3.0  
4.5  
6.0  
2.48  
3.98  
5.48  
2.34  
3.84  
5.34  
2.2  
3.7  
5.2  
IN  
IH  
V =V or V  
IL  
IN  
IH  
êIOUTê = -4 mÀ  
V =V or V  
IL  
IN  
IH  
êIOUTê = -5.2 mÀ  
VOL  
Maximum Low-Level  
Output Voltage  
V = V or V  
IL  
êIOUTê = 50 mA  
2.0  
3.0  
4.5  
6.0  
0.09  
0.09  
0.09  
0.09  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
IN  
IH  
V =V or V  
IL  
êIOUTê = 2.4 mÀ  
3.0  
4.5  
6.0  
6.0  
6.0  
6.0  
0.26  
0.26  
0.26  
-0.1  
0.1  
0.33  
0.33  
0.33  
-1.0  
1.0  
0.4  
0.4  
0.4  
-1.0  
1.0  
160  
IN  
IH  
V =V or V  
IL  
IN  
IH  
êIOUTê = 4 mÀ  
V =V or V  
IL  
IN  
IH  
êIOUTê = 5.2 mÀ  
IIL  
IIH  
ICC  
Maximum Low-Level  
Input Leakage Current  
V = 0 V  
IN  
mA  
mA  
mA  
Maximum High-Level  
Input Leakage Current  
V = VCC  
IN  
Maximum Quiescent  
Supply Current  
V =VCC or 0 V  
IN  
4.0  
40  
INTEGRAL  
3
IN74HC21A  
AC ELECTRICAL CHARACTERISTICS (CL=50pF,Input tr=tf=6.0 ns)  
VCC  
V
Guaranteed Limit  
Symbol  
Parameter  
25 °C to £85°C  
-55°C  
£125°C  
Unit  
ns  
tPHL, tPLH Maximum Propagation Delay (Figure 1)  
2.0  
4.5  
6.0  
110  
22  
19  
140  
28  
24  
165  
33  
28  
tTHL, tTLH Maximum Output Transition Time  
(Figure 1)  
2.0  
4.5  
6.0  
75  
15  
13  
95  
19  
16  
110  
22  
19  
ns  
CIN  
Maximum Input Capacitance  
5.0  
10  
10  
10  
pF  
Power Dissipation Capacitance (Per Gate)  
TA=25°C,VCC=5.0 V  
CPD  
Used to determine the no-load dynamic power  
consumption:  
50  
pF  
PD=CPDVCC2f+ICCVCC  
tLH  
tHL  
V1  
0.9  
0.9  
V2  
Input  
V2  
GND  
0.1  
0.1  
tPLH  
tPHL  
VCC  
0.9  
0.9  
V2  
V2  
Output  
0 V  
0.1  
0.1  
tTHL  
tTLH  
V1 = 0.5 VCC  
Figure 1. Switching Waveforms  
VCC  
VI  
VO  
DEVICE  
UNDER  
TEST  
Termination resistance RT – should  
be equal to ZOUT of pulse  
generators  
PULSE  
GENERATOR  
RT  
CL  
50 pF  
Figure 2. Test Circuit  
INTEGRAL  
4
IN74HC21A  
CHIP PAD DIAGRAM IZ74HC21A  
Chip marking  
IN74HC21  
(x=1.009; y=0.727)  
11  
12  
10  
09  
08  
13  
14  
07  
06  
05  
01  
02  
04  
03  
1.22 ±0.03  
Pad size 0.108 x 0.108 mm (Pad size is given as per passivation layer)  
Thickness of chip 0.46 ± 0,02 mm  
PAD LOCATION  
Pad No  
01  
Symbol  
À1  
B1  
X
Y
1.1165  
0.2405  
0.5105  
0.6925  
1.0065  
1.0065  
1.0065  
1.0065  
1.0065  
0.6925  
0.5105  
0.2405  
0.1165  
0.1165  
0.3160  
0.1150  
0.1020  
0.1150  
0.1400  
0.3160  
0.4840  
0.7040  
0.8800  
0.9050  
0.9180  
0.9050  
0.6960  
0.5360  
02  
03  
-
04  
C1  
05  
D1  
Y1  
06  
07  
GND  
Y2  
08  
09  
A2  
B2  
10  
11  
-
12  
C2  
13  
D2  
Vcc  
14  
INTEGRAL  
5
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