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IXXH100N60B3

型号：

IXXH100N60B3

描述：

极端的光透过， IGBT为10-30 kHz开关[ Extreme Light Punch Through IGBT for 10-30 kHz Switching ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

172 K

下载PDF手册
Advance Technical Information  
XPTTM 600V  
GenX3TM  
IXXH100N60B3  
VCES = 600V  
IC110 = 100A  
VCE(sat) ≤ 1.80V  
tfi(typ) = 150ns  
Extreme Light Punch Through  
IGBT for 10-30 kHz Switching  
TO-247 AD  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
600  
600  
V
V
TJ = 25°C to 175°C, RGE = 1MΩ  
G
C
Tab  
=
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
IC25  
ILRMS  
IC110  
TC= 25°C ( Chip Capability )  
Terminal Current Limit  
TC = 110°C  
210  
160  
100  
A
A
A
G = Gate  
E = Emitter  
C
Collector  
Tab = Collector  
ICM  
TC = 25°C, 1ms  
400  
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
50  
A
600  
mJ  
Features  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 2Ω  
Clamped Inductive Load  
ICM = 200  
A
μs  
W
(RBSOA)  
@ ≤ VCES  
z Optimized for 10-30kHz Switching  
tsc  
VGE= 15V, VCE = 360V, TJ = 150°C  
10  
z
Square RBSOA  
Avalanche Rated  
Short Circuit Capability  
High Current Handling Capability  
z
(SCSOA)  
RG = 10Ω, Non Repetitive  
z
PC  
TC = 25°C  
830  
z
z
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
International Standard Package  
-55 ... +175  
Advantages  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z
High Power Density  
Low Gate Drive Requirement  
z
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
Applications  
z
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
z
z
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE= 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE= 0V  
V
V
z
5.5  
z
z
25 μA  
z
TJ = 150°C  
TJ = 150°C  
2 mA  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 70A, VGE = 15V, Note 1  
1.50  
1.77  
1.80  
V
V
© 2010 IXYS CORPORATION, All Rights Reserved  
DS100284(12/10)  
IXXH100N60B3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXXH) Outline  
Min.  
Typ.  
Max.  
gfs  
Cie  
Coes  
Cres  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
22  
40  
S
4860  
285  
83  
pF  
pF  
pF  
s
∅ P  
1
2
3
Qg  
143  
37  
nC  
nC  
nC  
Qge  
Qgc  
IC = 70A, VGE = 15V, VCE = 0.5 • VCES  
60  
td(on)  
tri  
Eon  
td(off)  
tfi  
30  
70  
ns  
ns  
e
Inductive load, TJ = 25°C  
Terminals: 1 - Gate  
3 - Emitted  
2 - Collector  
IC = 70A, VGE = 15V  
1.9  
120  
150  
2.0  
mJ  
ns  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VCE = 360V, RG = 2Ω  
ns  
Note 2  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Eof  
2.8  
mJ  
f
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
td(on)  
tri  
32  
60  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 70A, VGE = 15V  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Eon  
td(off)  
tfi  
2.3  
150  
200  
2.8  
mJ  
ns  
20.80 21.46  
15.75 16.26  
VCE = 360V, RG = 2Ω  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Note 2  
.780 .800  
.177  
Eoff  
mJ  
∅P 3.55  
3.65  
.140 .144  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
Q
5.89  
6.40 0.232 0.252  
0.21  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXXH100N60B3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
350  
300  
250  
200  
150  
100  
50  
140  
120  
100  
80  
VGE = 15V  
14V  
VGE = 15V  
13V  
12V  
13V  
11V  
12V  
10V  
9V  
11V  
60  
10V  
9V  
40  
8V  
20  
8V  
7V  
7V  
6V  
0
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
3.5  
15  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
140  
120  
100  
80  
VGE = 15V  
13V  
VGE = 15V  
11V  
I C = 140A  
12V  
10V  
I C = 70A  
60  
9V  
8V  
40  
20  
I C = 35A  
7V  
5V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
180  
160  
140  
120  
100  
80  
TJ = 25ºC  
TJ = 150ºC  
25ºC  
I C = 140A  
- 40ºC  
60  
70A  
40  
20  
35A  
0
8
9
10  
11  
12  
13  
14  
4
5
6
7
8
9
10  
11  
VGE - Volts  
VGE - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXXH100N60B3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
I C = 70A  
I G = 10mA  
25ºC  
150ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
0
20  
40  
60  
80  
100  
120  
140  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
220  
200  
180  
160  
140  
120  
100  
80  
10,000  
1,000  
100  
C
ies  
C
oes  
60  
TJ = 150ºC  
RG = 2  
C
res  
40  
Ω
= 1 MHz  
5
dv / dt < 10V / ns  
f
20  
0
10  
100  
150  
200  
250  
300  
350  
400  
450  
500  
550  
600  
650  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
1000  
100  
10  
1
VCE(sat) Limit  
25µs  
0.1  
External Lead Limit  
100µs  
1ms  
0.01  
1
TJ = 175ºC  
10ms  
TC = 25ºC  
DC  
Single Pulse  
0.1  
0.001  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXXH100N60B3  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
5
4
3
2
1
0
5
4
3
2
1
0
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
7
6
5
4
3
2
1
E
E
on - - - -  
VGE = 15V  
E
E
on - - - -  
off  
RG = 2  
off  
Ω ,  
CE = 360V  
TJ = 150ºC , VGE = 15V  
VCE = 360V  
V
TJ = 150ºC  
I C = 100A  
TJ = 25ºC  
I C = 50A  
20  
30  
40  
50  
60  
70  
80  
90  
100  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
340  
300  
260  
220  
180  
140  
100  
340  
300  
260  
220  
180  
140  
100  
5
4
3
2
1
0
5
4
3
2
1
0
t f i  
t
d(off) - - - -  
E
E
on - - - -  
off  
TJ = 150ºC, GE = 15V  
V
RG = 2  
VGE = 15V  
Ω ,  
CE = 360V  
V
VCE = 360V  
I C = 50A  
I C = 100A  
I C = 50A  
I C = 100A  
2
3
4
5
6
7
8
9
10  
11 12  
13 14  
15  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
280  
260  
240  
220  
200  
180  
160  
140  
120  
100  
240  
220  
200  
180  
160  
140  
120  
100  
80  
400  
350  
300  
250  
200  
150  
100  
50  
320  
280  
240  
200  
160  
120  
80  
tf i  
t
d(on) - - - -  
t f i  
td(off)  
- - - -  
RG = 2  
, VGE = 15V  
Ω
RG = 2  
,
VGE = 15V  
Ω
VCE = 360V  
VCE = 360V  
I C = 100A  
TJ = 150ºC  
I C = 50A  
TJ = 25ºC  
60  
40  
25  
50  
75  
100  
125  
150  
20  
30  
40  
50  
60  
IC - Amperes  
70  
80  
90  
100  
TJ - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXXH100N60B3  
Fig. 20. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
140  
120  
100  
80  
38  
36  
34  
32  
30  
28  
26  
24  
180  
160  
140  
120  
100  
80  
84  
76  
68  
60  
52  
44  
36  
28  
20  
t r i  
td(on)  
- - - -  
t r i  
td(on) - - - -  
RG = 2  
, VGE = 15V  
TJ = 150ºC, VGE = 15V  
Ω
VCE = 360V  
VCE = 360V  
I C = 100A  
TJ = 150ºC, 25ºC  
60  
I C = 50A  
40  
60  
20  
40  
0
20  
20  
30  
40  
50  
60  
70  
80  
90  
100  
2
3
4
5
6
7
8
9
10 11 12 13 14 15  
RG - Ohms  
IC - Amperes  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
180  
37  
tr i  
td(on) - - - -  
, VGE = 15V  
160  
140  
120  
100  
80  
36  
35  
34  
33  
32  
31  
30  
29  
28  
RG = 2  
Ω
VCE = 360V  
I C = 100A  
60  
I C = 50A  
40  
20  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXX_100N60B3(7D)9-30-10-A  
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