VTP Process Photodiodes
VTP8440
PACKAGE DIMENSIONS inch (mm)
CASE 21 8 mm CERAMIC
CHIP ACTIVE AREA: .008 in2 (5.16 mm2)
PRODUCT DESCRIPTION
Planar silicon photodiode in a recessed ceramic
ABSOLUTE MAXIMUM RATINGS
package. Chip is coated with a protective layer
of clear epoxy. These diodes exhibit low dark
current under reverse bias and fast speed of
response.
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP8440
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
30
Typ.
Max.
I
Short Circuit Current
I Temperature Coefficient
SC
H = 100 fc, 2850 K
2850 K
55
.20
µA
%/°C
mV
SC
TC I
SC
V
Open Circuit Voltage
Temperature Coefficient
H = 100 fc, 2850 K
2850 K
350
-2.0
OC
TC V
V
mV/°C
nA
OC
OC
I
Dark Current
H = 0, VR = 50 V
H = 0, V = 10 mV
H = 0, V = 15 V
940 nm
15
15
D
R
Shunt Resistance
.5
GΩ
SH
C
Junction Capacitance
Responsivity
pF
J
2
Re
.025
.55
A/(W/cm )
A/W
S
Sensitivity
@ Peak
R
λ
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
400
50
1150
nm
range
λ
925
140
±50
nm
p
V
V
BR
1/2
θ
Degrees
W ⁄ Hz
cm Hz / W
-13
NEP
D*
1.3 x 10 (Typ.)
12
1.8 x 10 (Typ.)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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