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IXYH40N65C3D1

型号：

IXYH40N65C3D1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

196 K

下载PDF手册
Advance Technical Information  
XPTTM 650V IGBT  
GenX3TM w/ Diode  
VCES = 650V  
IC110 = 40A  
VCE(sat)  2.35V  
tfi(typ) = 20ns  
IXYH40N65C3D1  
IXYQ40N65C3D1  
Extreme Light Punch Through  
IGBT for 20-60 kHz Switching  
TO-247 (IXYH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1M  
G
C
Tab  
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-3P (IXYQ)  
IC25  
IC110  
IF110  
TC = 25°C  
TC = 110°C  
TC = 110°C  
80  
40  
50  
A
A
A
G
ICM  
TC = 25°C, 1ms  
180  
A
C
E
IA  
EAS  
TC = 25°C  
TC = 25°C  
20  
A
Tab  
300  
mJ  
SSOA  
V
GE= 15V, TVJ = 150°C, RG = 10  
ICM = 80  
A
μs  
W
G = Gate  
E = Emitter  
C
=
Collector  
(RBSOA)  
Clamped Inductive Load  
@VCE VCES  
Tab = Collector  
tsc  
VGE= 15V, VCE = 360V, TJ = 150°C  
5
(SCSOA)  
RG = 82, Non Repetitive  
Features  
PC  
TC = 25°C  
300  
Optimized for 20-60kHz Switching  
Square RBSOA  
Anti-Parallel Fast Diode  
Avalanche Rated  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
Short Circuit Capability  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Advantages  
Md  
Mounting Torque  
1.13/10  
Nm/lb.in  
Weight  
TO-247  
TO-3P  
6.0  
5.5  
g
g
High Power Density  
Extremely Rugged  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
BVCES  
VGE(th)  
ICES  
IC = 250A, VGE = 0V  
IC = 250A, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.0  
10 A  
1.5 mA  
TJ = 150C  
TJ = 150C  
IGES  
VCE = 0V, VGE = 20V  
100 nA  
VCE(sat)  
IC = 40A, VGE = 15V, Note 1  
2.0  
2.4  
2.35  
V
V
High Frequency Power Inverters  
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100625(8/14)  
IXYH40N65C3D1  
IXYQ40N65C3D1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXYH) Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 40A, VCE = 10V, Note 1  
16  
26  
S
Cies  
Coes  
Cres  
1950  
205  
40  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
P  
1
2
3
Qg(on)  
Qge  
Qgc  
66  
13  
32  
nC  
nC  
nC  
IC = 40A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
Eon  
td(off)  
tfi  
23  
40  
ns  
ns  
mJ  
ns  
ns  
e
Inductive load, TJ = 25°C  
IC = 30A, VGE = 15V  
Terminals: 1 - Gate  
3 - Emitted  
2 - Collector  
0.83  
110  
20  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VCE = 400V, RG = 10  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Note 2  
Eof  
0.36  
0.65 mJ  
f
td(on)  
tri  
24  
40  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Inductive load, TJ = 150°C  
IC = 30A, VGE = 15V  
Eon  
td(off)  
tfi  
1.60  
130  
30  
mJ  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
VCE = 400V, RG = 10  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Note 2  
.780 .800  
.177  
Eoff  
0.53  
mJ  
P 3.55  
3.65  
.140 .144  
RthJC  
RthCS  
0.50 °C/W  
°C/W  
Q
5.89  
6.40 0.232 0.252  
0.25  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
TO-3P Outline  
Reverse Diode (FRED)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
VF  
IF = 30A, VGE = 0V, Note 1  
2.5  
V
V
TJ = 150°C  
1.2  
Irr  
trr  
TJ = 150°C  
TJ = 150°C  
23  
120  
A
ns  
IF = 30A, VGE = 0V,  
-diF/dt = 500A/μs, VR = 400V  
RthJC  
0.60 °C/W  
1 = Gate  
2,4  
=
Collector  
3 = Emitter  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYH40N65C3D1  
IXYQ40N65C3D1  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
240  
200  
160  
120  
80  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
12V  
11V  
10V  
14V  
13V  
12V  
11V  
9V  
10V  
9V  
8V  
8V  
7V  
40  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
5
10  
15  
20  
25  
30  
VCE (V)  
VCE (V)  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
12V  
I
= 80A  
C
11V  
10V  
I
= 40A  
C
9V  
I
= 20A  
C
8V  
7V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
VCE (V)  
TJ (ºC)  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
6
5
4
3
2
1
70  
60  
50  
40  
30  
20  
10  
0
T
J
= 25ºC  
I
= 80A  
C
T
J
= 150ºC  
25ºC  
40A  
20A  
- 40ºC  
8
9
10  
11  
12  
13  
14  
15  
4.5  
5.5  
6.5  
7.5  
8.5  
9.5  
10.5  
11.5  
VGE (V)  
VGE - (V)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYH40N65C3D1  
IXYQ40N65C3D1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
40  
35  
30  
25  
20  
15  
10  
5
16  
14  
12  
10  
8
VCE = 325V  
IC = 40A  
T
J
= - 40ºC  
IG = 10mA  
25ºC  
150ºC  
6
4
2
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
0
10  
20  
30  
40  
50  
60  
70  
QG (nC)  
IC (A)  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
10,000  
1,000  
100  
= 1 MHz  
f
C
ies  
C
oes  
T
= 150ºC  
J
R
= 10  
Ω
G
C
res  
dv / dt < 10V / ns  
200  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
100  
300  
400  
500  
600  
700  
VCE (V)  
VCE (V)  
Fig. 12. Maximum Transient Thermal Impedance (IGBT)  
Fig. 11. Forward-Bias Safe Operating Area  
1
1000  
100  
10  
V
Limit  
CE(sat)  
25µs  
0.1  
100µs  
1
1ms  
0.1  
10ms  
0.01  
100ms  
DC  
T
= 175ºC  
= 25ºC  
J
0.01  
0.001  
T
C
Single Pulse  
0.001  
1
10  
100  
1000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
VDS (V)  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
Pulse Width (s)  
IXYH40N65C3D1  
IXYQ40N65C3D1  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
9
8
7
6
5
4
3
2
1
0
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
5
4
3
2
1
0
E
E
on - - - -  
off  
= 10  
E
E
on - - - -  
off  
R
V
= 15V  
GE  
Ω ,  
= 400V  
G
T = 150ºC , V = 15V  
J
GE  
I
= 60A  
C
V
CE  
V
= 400V  
CE  
T = 150ºC  
J
I
= 30A  
C
T = 25ºC  
J
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
IC (A)  
RG (ꢀ)  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
90  
80  
70  
60  
50  
40  
30  
20  
10  
400  
360  
320  
280  
240  
200  
160  
120  
80  
t f i  
t
d(off) - - - -  
E
R
E
on - - - -  
off  
T = 150ºC, V = 15V  
= 10  
VGE = 15V  
Ω ,  
J
GE  
G
V
= 400V  
VCE = 400V  
CE  
I
= 60A  
C
I
= 60A  
C
I
= 30A  
C
IC = 30A  
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
25  
50  
75  
100  
125  
150  
RG (ꢀ)  
TJ (ºC)  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
80  
70  
60  
50  
40  
30  
20  
10  
150  
140  
130  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
200  
t f i  
t
t f i  
t
d(off) - - - -  
d(off) - - - -  
180  
160  
140  
120  
100  
80  
R
G
= 10 , V = 15V  
R
G
= 10 , V = 15V  
Ω
Ω
GE  
GE  
V
= 400V  
V
= 400V  
CE  
CE  
T
J
= 150ºC  
I
= 30A, 60A  
C
T
J
= 25ºC  
60  
80  
40  
25  
50  
75  
100  
125  
150  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
TJ (ºC)  
IC (A)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYH40N65C3D1  
IXYQ40N65C3D1  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 20. Inductive Turn-on Switching Times vs.  
Collector Current  
td(on)  
- - - -  
200  
180  
160  
140  
120  
100  
80  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
120  
100  
80  
60  
40  
20  
0
40  
35  
30  
25  
20  
15  
10  
t r i  
t
d(on) - - - -  
t r i  
T = 150ºC, V = 15V  
J
GE  
R
G
= 10 , V = 15V  
Ω
GE  
V
= 400V  
CE  
V
= 400V  
CE  
I
I
= 60A  
= 30A  
C
C
T = 25ºC, 150ºC  
J
60  
40  
20  
0
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
RG (ꢀ)  
IC (A)  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
180  
160  
140  
120  
100  
80  
38  
36  
34  
32  
30  
28  
26  
24  
22  
20  
t r i  
t
d(on) - - - -  
R
G
= 10 , V = 15V  
Ω
GE  
V
= 400V  
CE  
I
= 60A  
C
60  
40  
20  
I = 30A  
C
0
25  
50  
75  
100  
125  
150  
TJ (ºC)  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYH40N65C3D1  
IXYQ40N65C3D1  
Fig. 22. Diode Forward Characteristics  
Fig. 23. Reverse Recovery Charge vs. -diF/dt  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1
T
= 150ºC  
= 400V  
VJ  
I
F
= 60A  
V
R
T
J
= 150ºC  
30A  
T
J
= 25ºC  
15A  
0.9  
250  
300  
350  
400  
450  
500  
550  
600  
650  
700  
0
0.5  
1
1.5  
2
2.5  
-diF/ dt (A/µs)  
VF (V)  
Fig. 24. Reverse Recovery Current vs. -diF/dt  
Fig. 25. Reverse Recovery Time vs. -diF/dt  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
220  
200  
180  
160  
140  
120  
100  
80  
TVJ = 150ºC  
R = 400V  
TVJ = 150ºC  
R = 400V  
30A  
V
V
15A  
I
= 60A  
F
30A  
15A  
650  
I
F
= 60A  
250  
300  
350  
400  
450  
500  
550  
600  
650  
700  
250  
300  
350  
400  
450  
500  
550  
600  
700  
-diF/dt (A/µs)  
diF/dt (A/µs)  
I
Fig. 26. Dynamic Parameters QRR, RR vs.  
Fig. 27. Maximum Transient Thermal Impedance (Diode)  
Virtual Junction Temperature  
1
1.2  
1
V
= 400V  
R
I
= 30A  
F
-dI /dt = 500 A/µs  
F
0.8  
0.6  
0.4  
0.2  
0
0.1  
K
K
I
RR  
F
F
Q
RR  
0.01  
0
20  
40  
60  
80  
100  
120  
140  
160  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
TVJ  
Pulse Width (s)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXY_40N65C3D1(51) 8-12-14  
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