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UZXM62P02E6TC

型号：

UZXM62P02E6TC

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

7 页

PDF大小：

182 K

下载PDF手册
ZXM62P02E6  
20V P-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS=-20V; RDS(ON)=0.20⍀; ID=-2.3A  
DESCRIPTION  
This new generation of high density MOSFETs from Zetex utilises a unique  
structure that combines the benefits of low on-resistance with fast switching  
speed. This makes them ideal for high efficiency, low voltage, power  
management applications.  
SOT23-6  
FEATURES  
•
•
•
•
•
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
SOT23-6 package  
APPLICATIONS  
•
•
•
•
DC - DC Converters  
Power Management Functions  
Disconnect switches  
Motor control  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH (mm)  
QUANTITY  
PER REEL  
Top View  
ZXM62P02E6TA  
ZXM62P02E6TC  
7
8mm embossed  
8mm embossed  
3000 units  
10000 units  
13  
DEVICE MARKING  
•
2P02  
ISSUE 1 - JUNE 2004  
1
ZXM62P02E6  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VDSS  
LIMIT  
-20  
UNIT  
Drain-Source Voltage  
Gate- Source Voltage  
V
V
A
VGS  
± 12  
Continuous Drain Current (VGS=-4.5V; TA=25°C)(b) ID  
(VGS=-4.5V; TA=70°C)(b)  
-2.3  
-1.7  
Pulsed Drain Current (c)  
IDM  
-13  
-1.9  
-13  
A
A
A
Continuous Source Current (Body Diode)(b)  
Pulsed Source Current (Body Diode)(c)  
IS  
ISM  
PD  
Power Dissipation at TA=25°C (a)  
Linear Derating Factor  
1.1  
8.8  
W
mW/°C  
Power Dissipation at TA=25°C (b)  
Linear Derating Factor  
PD  
1.7  
13.6  
W
mW/°C  
Operating and Storage Temperature Range  
THERMAL RESISTANCE  
PARAMETER  
Tj:Tstg  
-55 to +150  
°C  
SYMBOL  
RθJA  
VALUE  
113  
UNIT  
°C/W  
°C/W  
Junction to Ambient (a)  
Junction to Ambient (b)  
RθJA  
73  
NOTES  
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface mounted on FR4 PCB measured at tр5 secs.  
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal  
Impedance graph.  
ISSUE 1 - JUNE 2004  
2
ZXM62P02E6  
CHARACTERISTICS  
100  
10  
1
2
Refer Note (a)  
1.5  
Refer Note (b)  
Refer Note (a)  
1
DC  
1s  
100ms  
0.5  
10ms  
1ms  
100µs  
0.1  
0
0.1  
1
10  
100  
0
20  
40  
60  
80 100 120 140 160  
-VDS - Drain-Source Voltage (V)  
T - Temperature (° )  
Safe Operating Area  
Derating Curve  
120  
100  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
Refer Note (a)  
Refer Note (b)  
D=0.5  
D=0.5  
D=0.2  
D=0.2  
D=0.1  
D=0.1  
D=0.05  
D=0.05  
Single Pulse  
Single Pulse  
0.0001 0.001  
0.01  
0.1  
1
10  
100  
0.0001 0.001 0.01  
0.1  
1
10  
100 1000  
Pulse Width (s)  
Pulse Width (s)  
Transient Thermal Impedance  
Transient Thermal Impedance  
ISSUE 1 - JUNE 2004  
3
ZXM62P02E6  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX.  
UNIT CONDITIONS.  
STATIC  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
V(BR)DSS -20  
IDSS  
V
ID=-250µA, VGS=0V  
VDS=-20V, VGS=0V  
VGS=± 12V, VDS=0V  
ID=-250µA, VDS= VGS  
-1  
µA  
nA  
V
IGSS  
±100  
Gate-Source Threshold Voltage  
VGS(th)  
-0.7  
1.5  
Static Drain-Source On-State Resistance RDS(on)  
(1)  
0.2  
0.375  
VGS=-4.5V, ID=-1.6A  
VGS=-2.7V, ID=-0.8A  
Ω
Ω
Forward Transconductance (3)  
DYNAMIC (3)  
gfs  
S
VDS=-10V,ID=-0.8A  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
SWITCHING(2) (3)  
Turn-On Delay Time  
Rise Time  
Ciss  
Coss  
Crss  
320  
150  
75  
pF  
pF  
pF  
VDS=-15 V, VGS=0V,  
f=1MHz  
td(on)  
tr  
td(off)  
tf  
4.1  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
15.4  
12.0  
19.2  
V
DD=-10V, ID=-1.6A  
RG=6.0Ω, RD=6.1Ω  
(Refer to test circuit)  
Turn-Off Delay Time  
Fall Time  
Total Gate Charge  
Gate-Source Charge  
Gate Drain Charge  
SOURCE-DRAIN DIODE  
Diode Forward Voltage (1)  
Qg  
5.8  
VDS=-16V,VGS=-4.5V,  
ID=-1.6A  
(Refer to test circuit)  
Qgs  
Qgd  
1.25  
2.8  
VSD  
-0.95  
V
Tj=25°C, IS=-1.6A,  
VGS=0V  
Reverse Recovery Time (3)  
Reverse Recovery Charge(3)  
trr  
22.5  
10.4  
ns  
Tj=25°C, IF=-1.6A,  
di/dt= 100A/µs  
Qrr  
nC  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .  
(2) Switching characteristics are independent of operating junction temperature.  
(3) For design aid only, not subject to production testing.  
ISSUE 1 - JUNE 2004  
4
ZXM62P02E6  
TYPICAL CHARACTERISTICS  
100  
10  
1
100  
+25°C  
+150°C  
5V 4.5V  
-VGS  
4V  
5V  
4.5V -VGS  
4V  
3.5V  
3V  
10  
3.5V  
3V  
2.5V  
2.5V  
2V  
2V  
1
0.1  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
200  
1.4  
-V - Drain-Source Voltage (V)  
Output Characteristics  
-V - Drain-Source Voltage (V)  
Output Characteristics  
DS  
DS  
100  
10  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VDS=-10V  
RDS(on)  
VGS=-4.5V  
ID=-1.6A  
VGS=VDS  
ID=-250µA  
T=150°C  
T=25°C  
1
VGS(th)  
0.1  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
-100  
-50  
0
50  
100  
150  
-V - Gate-Source Voltage (V)  
T - Junction Temperature (°C)  
j
GS  
Typical Transfer Characteristics  
Normalised RDS(on) and VGS(th)  
v Temperature  
10  
100  
10  
1
1
VGS=-3V  
VGS=-5V  
T=150°C  
T=25°C  
0.1  
0.1  
0.1  
1
10  
100  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
-ID - Drain Current (A)  
-VSD - Source-Drain Voltage (V)  
On-Resistance v Drain Current  
Source-Drain Diode Forward Voltage  
ISSUE 1 - JUNE 2004  
5
ZXM62P02E6  
TYPICAL CHARACTERISTICS  
700  
600  
500  
400  
300  
200  
100  
0
5
Vgs=0V  
f=1Mhz  
ID=-1.6A  
4.5  
4
VDS=-16V  
3.5  
3
Ciss  
Coss  
Crss  
2.5  
2
1.5  
1
0.5  
0
0.1  
1
10  
100  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
-VDS - Drain Source Voltage (V)  
Q - Charge (nC)  
Capacitance v Drain-Source Voltage  
Gate-Source Voltage v Gate Charge  
Gate Charge Test Circuit  
Basic Gate Charge Waveform  
Switching Time Test Circuit  
Switching Time Waveforms  
ISSUE 1 - JUNE 2004  
6
ZXM62P02E6  
PACKAGE DIMENSIONS  
PAD LAYOUT DETAILS  
b
e
2
L
E1  
E
DATUM A  
a
e1  
D
A
A2  
A1  
DIM Millimetres  
Min  
Inches  
Min  
Max  
1.45  
0.15  
1.30  
0.50  
0.20  
3.00  
3.00  
1.75  
0.60  
Max  
A
0.90  
0.35  
0.057  
0.006  
0.051  
0.019  
0.008  
0.118  
0.118  
0.069  
0.002  
A1  
A2  
b
0.00  
0
0.90  
0.035  
0.014  
0.0035  
0.110  
0.102  
0.059  
0.004  
0.35  
C
0.09  
D
2.80  
E
2.60  
E1  
L
1.50  
0.10  
e
0.95 REF  
1.90 REF  
0°  
0.037 REF  
0.074 REF  
0°  
e1  
L
10°  
10°  
Zetex plc.  
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.  
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)  
Fax: (44)161 622 4420  
Zetex GmbH  
Zetex Inc.  
Zetex (Asia) Ltd.  
3510 Metroplaza, Tower 2  
Hing Fong Road,  
Kwai Fong, Hong Kong  
Telephone:(852) 26100 611  
Fax: (852) 24250 494  
These are supported by  
agents and distributors in  
major countries world-wide  
Zetex plc 1999  
Streitfeldstraße 19  
D-81673 München  
Germany  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
47 Mall Drive, Unit 4  
Commack NY 11725  
USA  
Telephone: (516) 543-7100  
Fax: (516) 864-7630  
Internet:http://www.zetex.com  
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any  
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the  
right to alter without notice the specification, design, price or conditions of supply of any product or service.  
ISSUE 1 - JUNE 2004  
7
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