请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTP52P10P

型号：

IXTP52P10P

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

185 K

下载PDF手册
PolarPTM  
Power MOSFET  
P-Channel Enhancement Mode  
Avalanche Rated  
IXTA52P10P  
IXTH52P10P  
IXTP52P10P  
IXTQ52P10P  
TO-247 (IXTH)  
VDSS = - 100V  
ID25 = - 52A  
RDS(on)  
≤
50mΩ  
TO-220 (IXTP)  
TO-263 (IXTA)  
G
S
G
D (TAB)  
D (TAB)  
D (TAB)  
G
D
S
D
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-3P (IXTQ)  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
-100  
-100  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
S
D (TAB)  
= Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
- 52  
A
A
-130  
G = Gate  
S = Source  
D
IAR  
TC = 25°C  
TC = 25°C  
- 52  
1.5  
A
J
TAB = Drain  
EAS  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
V/ns  
W
Features:  
300  
z International standard packages  
z Fast intrinsic diode  
z Dynamic dV/dt Rated  
z Avalanche Rated  
z Rugged PolarPTM process  
z Low QG and Rds(on) characterization  
z Low Drain-to-Tab capacitance  
z Low package inductance  
- easy to drive and to protect  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
Md  
Mounting torque  
(TO-3P,TO-220,TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-3P  
TO-220  
TO-263  
6.0  
5.5  
3.0  
2.5  
g
g
g
g
Applications:  
z
Hight side switching  
Push-pull amplifiers  
DC Choppers  
Current regulators  
z
z
z
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
z
(TJ = 25°C, unless otherwise specified)  
Automatic test equipment  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ± 20V, VDS = 0V  
-100  
- 2.5  
V
Advantages:  
- 4.5  
V
z
Low gate charge results in simple  
±100 nA  
drive requirement  
Improved Gate, Avalanche and  
z
IDSS  
VDS = VDSS  
VGS = 0V  
-10 μA  
-150 μA  
dynamic dV/dt ruggedness  
High power density  
Fast switching  
Easy to parallel  
TJ = 125°C  
z
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
50 mΩ  
z
z
DS99912A(5/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA52P10P IXTH52P10P  
IXTP52P10P IXTQ52P10P  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
12  
20  
S
Ciss  
Coss  
Crss  
2845  
1015  
275  
pF  
pF  
pF  
VGS = 0V, VDS = - 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
22  
29  
38  
22  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3.3Ω (External)  
Qg(on)  
Qgs  
60  
17  
23  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCS  
0.42 °C/W  
°C/W  
(TO-3P)(TO-247)  
(TO-220)  
0.21  
0.50  
°C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
- 52  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = - 26A, VGS = 0V, Note 1  
- 200  
- 3.5  
trr  
QRM  
IRM  
120  
0.53  
- 8.9  
ns  
μC  
A
IF = - 26A, -di/dt = -100A/μs  
VR = - 50V, VGS = 0V  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA52P10P IXTH52P10P  
IXTP52P10P IXTQ52P10P  
TO-263 (IXTA) Outline  
TO-247 (IXTH) Outline  
∅ P  
1
2
3
e
Terminals: 1 - Gate  
2 - Drain  
Inches  
Dim.  
Millimeter  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
4.32  
5.49 .170 .216  
TO-3P (IXTQ) Outline  
TO-220 (IXTP) Outline  
Pins: 1 - Gate  
2 - Drain  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA52P10P IXTH52P10P  
IXTP52P10P IXTQ52P10P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
-130  
-110  
-90  
-55  
-50  
-45  
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
VGS = -10V  
- 9V  
VGS = -10V  
- 9V  
- 8V  
- 8V  
-70  
- 7V  
- 6V  
- 7V  
-50  
-30  
- 6V  
- 5V  
- 5V  
-10  
0
0.0  
-0.4  
-0.8  
-1.2  
-1.6  
-2.0  
-2.4  
-2.8  
0
-3  
-6  
-9  
-12  
-15  
-18  
-21  
-24  
-27  
-30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. RDS(on) Normalized to ID = - 26A vs.  
Junction Temperature  
-55  
-50  
-45  
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = -10V  
- 9V  
VGS = -10V  
- 8V  
I D = - 52A  
I D = - 26A  
- 7V  
- 6V  
- 5V  
0
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -5.5  
VDS - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = - 26A vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-55  
-50  
-45  
-40  
-35  
-30  
-25  
-20  
-15  
-10  
-5  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = -10V  
TJ = 125ºC  
TJ = 25ºC  
0
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
-80  
-90 -100  
-50  
-25  
0
25  
50  
75  
100  
125  
ID - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
TJ - Degrees Centigrade  
IXTA52P10P IXTH52P10P  
IXTP52P10P IXTQ52P10P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
32  
28  
24  
20  
16  
12  
8
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
TJ = - 40ºC  
TJ = - 40ºC  
25ºC  
125ºC  
25ºC  
125ºC  
4
0
-3.0 -3.5 -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0  
0
-10  
-20  
-30  
-40  
-50  
-60  
-70  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
-160  
-140  
-120  
-100  
-80  
-60  
-40  
-20  
0
VDS = - 50V  
I
D = - 26A  
I G = -1mA  
TJ = 125ºC  
TJ = 25ºC  
0
5
10 15 20 25 30 35 40 45 50 55 60  
QG - NanoCoulombs  
-0.5  
-1.0  
-1.5  
-2.0  
-2.5  
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
VSD - Volts  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
-
1,000  
-100  
-10  
10,000  
1,000  
100  
= 1 MHz  
f
RDS(on) Limit @ V  
GS  
= -15V  
C
iss  
100µs  
25µs  
1ms  
10ms  
C
oss  
DC, 100ms  
C
rss  
TJ = 150ºC  
TC = 25ºC  
Single Pulse  
-
1
-
-
100  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
10  
VDS - Volts  
VDS - Volts  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA52P10P IXTH52P10P  
IXTP52P10P IXTQ52P10P  
Fig. 13. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_52P10P(B5)3-25-08-B  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于达普

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：smail@ic72.com

服务时间：周一至周六 8:30-17:30

达普官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.263113s