NPN SILICON PLANAR
ZTX415
AVALANCHE TRANSISTOR
ISSUE 4 - NOVEMBER 1995
FEATURES
*
*
*
Specifically designed for Avalanche mode operation
60A Peak Avalanche Current (Pulse width=20ns)
Low inductance package
APPLICATIONS
*
*
*
*
Laser LED drivers
C
B
E
Fast edge generation
High speed pulse generators
Suitable for single, series and parallel operation
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
260
Collector-Emitter Voltage
100
V
Emitter-Base Voltage
6
500
V
Continuous Collector Current
Peak Collector Current (Pulse Width=20ns)
Power Dissipation
mA
A
ICM
60
Ptot
680
mW
°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +175
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
TYP.
PARAMETER
SYMBOL MIN.
V(BR)CES 260
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
V
V
IC=1mA
Tamb= -55 to +175°C
Collector-Emitter
Breakdown Voltage
VCEO(sus) 100
IC=100µA
Emitter-Base
Breakdown Voltage
V(BR)EBO
ICBO
6
IE=10µA
Collector Cut-Off
Current
0.1
10
V
V
CB=180V
CB=180V, Tamb=100°C
µA
µA
Emitter Cut-Off Current IEBO
0.1
0.5
V
EB=4V
µA
Collector-Emitter
Saturation Voltage
VCE(sat)
VBE(sat)
ISB
V
IC=10mA, IB=1mA*
Base-Emitter
Saturation Voltage
0.9
V
IC=10mA, IB=1mA*
Current in Second
Breakdown (Pulsed)
15
25
A
A
VC=200V, CCE=620pF
VC=250V, CCE=620pF
Static Forward Current hFE
Transfer Ratio
25
IC=10mA, VCE=10V*
Transition Frequency
fT
40
MHz
pF
IC=10mA, VCE=20V
f=20MHz
Collector-Base
Capacitance
Ccb
8
VCB=20V, IE=0
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3-171
