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UZXM62N03GTC

型号：

UZXM62N03GTC

品牌：

ZETEX[ ZETEX SEMICONDUCTORS ]

页数：

7 页

PDF大小：

153 K

下载PDF手册
ZXM62N03G  
30V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(BR)DSS  
V
= 30V: R  
= 0.11 : I = 4.7A  
DS(on) D  
DESCRIPTION  
This new generation of High Density MOSFETs from Zetex utilises a unique  
structure that com bines the benefits of low on-resistance with fast switching  
speed. This m akes them ideal for high efficiency, low voltage, power m anagem ent  
applications.  
SOT223  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
SOT223 package  
APPLICATIONS  
DC-DC Converters  
Audio Output Stage  
Relay and Soleniod driving  
Motor Control  
ORDERING INFORMATION  
DEVICE  
REEL  
S IZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
ZXM62N03GTA  
ZXM62N03GTC  
7”  
12m m  
12m m  
1000 u n its  
4000 u n its  
13”  
Top View  
DEVICE MARKING  
ZXM6  
2N03  
ISSUE 1 - OCTOBER 2002  
1
ZXM62N03G  
ABSOLUTE MAXIMUM RATING  
PARAMETER  
S YMBOL  
LIMIT  
30  
UNIT  
Dra in -S o u rce Vo lta g e  
Ga te -S o u rce Vo lta g e  
V
V
V
V
A
DS S  
GS  
Ϯ20  
Co n tin u o u s Dra in Cu rre n t (V =10V; T =25°C)(b )  
I
4.7  
3.8  
3.4  
GS  
A
D
(V =10V; T =70°C)(b )  
GS  
A
(V =10V; T =25°C)(a )  
GS  
A
Pu ls e d Dra in Cu rre n t (c)  
I
I
I
16  
2.6  
16  
A
A
A
DM  
Co n tin u o u s S o u rce Cu rre n t (Bo d y Dio d e ) (b )  
Pu ls e d S o u rce Cu rre n t (Bo d y Dio d e )(c)  
S
S M  
Po w e r Dis s ip a tio n a t T =25°C (a )  
A
Lin e a r De ra tin g Fa cto r  
P
2.0  
16  
W
m W/°C  
D
Po w e r Dis s ip a tio n a t T =25°C (b )  
A
Lin e a r De ra tin g Fa cto r  
P
3.9  
31  
W
m W/°C  
D
Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e  
T :T  
-55 to +150  
°C  
j
s tg  
THERMAL RESISTANCE  
PARAMETER  
S YMBOL  
VALUE  
62.5  
32  
UNIT  
°C/W  
°C/W  
J u n ctio n to Am b ie n t (a )  
J u n ctio n to Am b ie n t (b )  
R
R
θJ A  
θJ A  
NOTES  
(a) For a device surface m ounted on 25m m x 25m m FR4 PCB with high coverage of single sided 1oz copper,  
in still air conditions  
(b) For a device surface m ounted on FR4 PCB m easured at tр10 secs.  
(c) Repetitive rating 25m m x 25m m FR4 PCB, D=0.05 pulse width lim ited by m axim um junction tem perature.  
ISSUE 1 - OCTOBER 2002  
2
ZXM62N03G  
ISSUE 1 - OCTOBER 2002  
3
ZXM62N03G  
ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherw ise stated).  
PARAMETER  
S YMBOL  
MIN. TYP. MAX.  
UNIT CONDITIONS .  
S TATIC  
Dra in -S o u rce Bre a kd o w n Vo lta g e  
Ze ro Ga te Vo lta g e Dra in Cu rre n t  
Ga te -Bo d y Le a ka g e  
V
30  
V
I =250µA, V =0V  
(BR)DS S  
D
GS  
I
I
1
100  
␮A  
n A  
V
V
=30V, V =0V  
DS S  
GS S  
DS GS  
V
=Ϯ20V, V =0V  
DS  
GS  
Ga te -S o u rce Th re s h o ld Vo lta g e  
V
1.0  
I =250␮A, V = V  
DS GS  
D
GS (th )  
DS (o n )  
S ta tic Dra in -S o u rce On -S ta te Re s is ta n ce  
(1)  
R
0.11  
0.15  
V
V
=10V, I =2.2A  
D
⍀
⍀
GS  
GS  
=4.5V, I =1.1A  
D
Fo rw a rd Tra n s co n d u cta n ce (1)(3)  
DYNAMIC (3)  
g
1.1  
S
V
=15V,I =1.1A  
D
fs  
DS  
In p u t Ca p a cita n ce  
C
C
C
380  
90  
p F  
p F  
p F  
is s  
V
=25V, V =0V,  
DS  
GS  
Ou tp u t Ca p a cita n ce  
Re ve rs e Tra n s fe r Ca p a cita n ce  
S WITCHING(2) (3)  
Tu rn -On De la y Tim e  
Ris e Tim e  
f=1MHz  
o s s  
rs s  
30  
t
t
t
t
2.9  
5.6  
11.7  
6.4  
9.6  
1.7  
2.8  
n s  
d (o n )  
n s  
r
V
R
=15V, I =2.2A  
D
DD  
=6.0⍀, V =10V  
G
GS  
Tu rn -Off De la y Tim e  
Fa ll Tim e  
n s  
d (o ff)  
f
n s  
To ta l Ga te Ch a rg e  
Ga te -S o u rce Ch a rg e  
Ga te -Dra in Ch a rg e  
S OURCE-DRAIN DIODE  
Dio d e Fo rw a rd Vo lta g e (1)  
Q
Q
Q
n C  
n C  
n C  
g
V
=24V,V =10V,  
GS  
DS  
g s  
g d  
ID=2.2A  
V
0.95  
V
T =25ЊC, I =2.2A,  
J S  
S D  
V
=0V  
GS  
Re ve rs e Re co ve ry Tim e (3)  
Re ve rs e Re co ve ry Ch a rg e (3)  
t
18.8  
11.4  
n s  
T =25ЊC, I =2.2A,  
J F  
d i/d t= 100A/␮s  
rr  
Q
n C  
rr  
NOTES  
(1) Measured under pulsed conditions. Width=300␮s. Duty cycle Յ 2% .  
(2) Switching characteristics are independent of operating junction tem perature.  
(3) For design aid only, not subject to production testing.  
ISSUE 1 - OCTOBER 2002  
4
ZXM62N03G  
TYPICAL CHARACTERISTICS  
100  
10  
1
100  
+25°C  
+150°C  
10V 8V 7V 6V  
10V 8V 7V 6V  
VGS  
5V  
VGS  
5V  
10  
1
4.5V  
4.5V  
4V  
4V  
3.5V  
3.5V  
3V  
3V  
0.1  
0.1  
0.1  
1
10  
100  
0.1  
1
10  
100  
VDS - Drain-Source Voltage (V)  
VDS - Drain-Source Voltage (V)  
Output Characteristics  
Output Characteristics  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
100  
10  
VDS=10V  
RDS(on)  
VGS=10V  
ID=2.2A  
T=150°C  
T=25°C  
VGS=VDS  
ID=250uA  
1
VGS(th)  
0.1  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
6.5  
-100  
-50  
0
50  
100  
150  
200  
VGS - Gate-Source Voltage (V)  
Tj - J unction Tem perature (°C)  
Typical Transfer Characteristics  
Norm alised RDS(on) and VGS(th)  
v Tem perature  
10  
1
100  
10  
1
VGS=3V  
VGS=4.5V  
VGS=10V  
0.1  
T=150°C  
T=25°C  
0.01  
0.1  
0.1  
1
10  
100  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
ID  
- Drain Current (A)  
VSD - Source-Drain Voltage (V)  
On-Resistance v Drain Current  
Source-Drain Diode Forw ard Voltage  
ISSUE 1 - OCTOBER 2002  
5
ZXM62N03G  
TYPICAL CHARACTERISTICS  
900  
800  
700  
5
ID=2.2A  
Vgs=0V  
f=1Mhz  
4.5  
4
Ciss  
Coss  
Crss  
3.5  
3
600  
500  
VDS=16V  
2.5  
2
400  
300  
200  
100  
0
1.5  
1
0.5  
0
0.1  
1
10  
100  
0
1
2
3
4
5
6
VDS - Drain Source Voltage (V)  
Q -Charge (nC)  
Capacitance v Drain-Source Voltage  
Gate-Source Voltage v Gate Charge  
Gate Charge Test Circuit  
Basic Gate Charge Waveform  
Sw itching Tim e Waveform s  
Sw itching Tim e Test Circuit  
ISSUE 1 - OCTOBER 2002  
6
ZXM62N03G  
PACKAGE OUTLINE  
PACKAGE DIMENSIONS  
DIM  
Millim e tre s  
In ch e s  
Min  
6.3  
3.3  
-
Ma x  
6.7  
Min  
Ma x  
0.264  
0.146  
0.067  
0.031  
0.122  
0.13  
A
B
C
D
E
0.248  
0.130  
-
3.7  
1.7  
0.6  
2.9  
0.24  
0.8  
0.024  
0.114  
0.009  
3.1  
F
0.32  
G
H
K
L
NOM 4.6  
NOM 0.181  
0.033 0.041  
0.0008 0.004  
0.264 0.287  
0.85  
0.02  
6.7  
1.05  
0.10  
7.3  
M
NOM 2.3  
NOM 0.0905  
PAD LAYOUT DETAILS  
4.6  
2.0 m in  
(3x)  
2.3  
1.5 m in  
(3x)  
6.8  
2.0 m in  
3.8 m in  
© Zetex plc 2002  
Europe  
Am ericas  
Asia Pacific  
Zetex plc  
Zetex Gm bH  
Zetex Inc  
Zetex (Asia) Ltd  
Fields New Road  
Chadderton  
Streitfeldstraß e 19  
D-81673 München  
700 Veterans Mem orial Hwy  
Hauppauge, NY11788  
3701-04 Metroplaza, Tower 1  
Hing Fong Road  
Oldham , OL9 8NP  
United Kingdom  
Telephone (44) 161 622 4422  
Fax: (44) 161 622 4420  
uk.sales@zetex.com  
Kwai Fong  
Hong Kong  
Telephone: (852) 26100 611  
Fax: (852) 24250 494  
asia.sales@zetex.com  
Germ any  
USA  
Telefon: (49) 89 45 49 49 0  
Fax: (49) 89 45 49 49 49  
europe.sales@zetex.com  
Telephone: (631) 360 2222  
Fax: (631) 360 8222  
usa.sales@zetex.com  
Th e s e o ffice s a re s u p p o rte d b y a g e n ts a n d d is trib u to rs in m a jo r co u n trie s w o rld -w id e .  
This publication is issued to provide outline inform ation only which (unless agreed by the Com pany in writing) m ay not be used, applied or reproduced  
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Com pany  
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.  
For the latest product inform ation, log on to w w w .zetex.com  
ISSUE 1 - OCTOBER 2002  
7
厂商 型号 描述 页数 下载

DIODES

 		UZX3CD2S1M832TA [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CD2S1M832TC [ Small Signal Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CDBS1M832TA [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

 		UZX3CDBS1M832TC [ Small Signal Bipolar Transistor, 4.5A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, 3 X 2 MM, MLP832, 10 PIN ] 9 页

DIODES

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DIODES

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DIODES

 		UZX5T849GTC [ Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTA [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

DIODES

 		UZX5T853GTC [ Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN ] 6 页

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