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IXTQ180N10T

型号：

IXTQ180N10T

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

202 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTH180N10T  
IXTQ180N10T  
VDSS = 100  
ID25 = 180  
RDS(on) ≤ 6.4 mΩ  
V
A
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXTH)  
Symbol  
Test Conditions  
Maximum Ratings  
G
(TAB)  
D
VDSS  
VDGR  
TJ = 25° C to 175° C  
TJ = 25° C to 175° C; RGS = 1 MΩ  
100  
100  
V
V
S
VGSM  
Transient  
30  
V
TO-3P (IXTQ)  
ID25  
ILRMS  
IDM  
TC =25°C  
Lead Current Limit, RMS  
TC = 25° C, pulse width limited by TJM  
180  
75  
450  
A
A
A
IAR  
EAS  
TC =25°C  
TC = 25° C  
25  
750  
A
mJ  
G
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤175° C, RG = 3.3 Ω  
3
V/ns  
D
S
(TAB)  
TC =25°C  
480  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 ° C Operating Temperature  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Md  
Mounting torque  
1.13 / 10 Nm/lb.in.  
Weight  
TO-3P  
TO-247  
5.5  
6
g
g
Advantages  
ꢀ
Easy to mount  
Space savings  
High power density  
ꢀ
ꢀ
Symbol  
Test Conditions  
Characteristic Values  
Applications  
Automotive  
ꢀ
(TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
- Motor Drives  
- 42V Power Bus  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250 µA  
100  
V
V
2.5  
4.5  
- ABS Systems  
ꢀ
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
VGS  
=
20 V, VDS = 0 V  
200  
nA  
ꢀ
Systems  
Distributed Power Architechtures  
and VRMs  
Electronic Valve Train Systems  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
250  
µA  
µA  
ꢀ
TJ = 150° C  
ꢀ
RDS(on)  
VGS = 10 V, ID = 25 A, Notes 1, 2  
5.4  
6.4 m Ω  
ꢀ
High Current Switching  
Applications  
High Voltage Synchronous Recifier  
ꢀ
DS99712 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTH180N10T  
IXTQ180N10T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-247AD Outline  
(TJ = 25° C unless otherwise specified)  
gfs  
VDS= 10 V; ID = 60 A, Note 1  
70  
110  
S
Ciss  
Coss  
Crss  
6900  
923  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
1
2
3
162  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A  
RG = 3.3 Ω (External)  
33  
54  
42  
31  
ns  
ns  
ns  
ns  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Qg(on)  
Qgs  
151  
39  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
45  
RthJC  
RthCS  
0.31°C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.25  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Symbol  
Test Conditions  
Characteristic Values  
.780 .800  
.177  
TJ = 25° C unless otherwise specified)  
Min. Typ.  
Max.  
∅P 3.55  
Q
3.65  
.140 .144  
IS  
VGS = 0 V  
180  
A
A
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A, VGS = 0 V, Note 1  
450  
0.95  
V
TO-3P (IXTQ) Outline  
IF = 25 A, -di/dt = 100 A/µs  
100  
ns  
VR = 50 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5 mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463  
7,005,734 B2  
7,063,975 B2  
6771478 B2 7,071,537  
IXTH180N10T  
IXTQ180N10T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
180  
160  
140  
120  
100  
80  
V
= 10V  
V
= 10V  
GS  
GS  
9V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
60  
40  
50  
20  
25  
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0
1
2
3
4
5
6
7
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics  
@ 150ºC  
Fig. 4. RDS(on) Normalized to ID = 90A Value  
vs. Junction Temperature  
180  
160  
140  
120  
100  
80  
2.8  
2.6  
2.4  
2.2  
2
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
7V  
I
= 180A  
D
1.8  
1.6  
1.4  
1.2  
1
I
= 90A  
D
6V  
5V  
60  
40  
0.8  
0.6  
0.4  
20  
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 90A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
3
2.8  
2.6  
2.4  
2.2  
2
140  
External Lead Current Limit for TO-263 (7-Lead)  
120  
100  
80  
60  
40  
20  
0
T = 175ºC  
J
External Lead Current Limit for TO-3P, TO-220, & TO-263  
V
= 10V  
15V  
1.8  
1.6  
1.4  
1.2  
1
GS  
- - - -  
T = 25ºC  
J
0.8  
0.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
50  
100  
150  
200  
250  
300  
TC - Degrees Centigrade  
ID - Amperes  
© 2006 IXYS CORPORATION All rights reserved  
IXTH180N10T  
IXTQ180N10T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
225  
200  
175  
150  
125  
100  
75  
150  
135  
120  
105  
90  
T
J
= - 40ºC  
25ºC  
75  
150ºC  
60  
T
J
= 150ºC  
45  
25ºC  
- 40ºC  
50  
30  
25  
15  
0
0
3.5  
0.4  
0
4
4.5  
5
5.5  
6
6.5  
7
7.5  
1.2  
40  
0
25  
50  
75  
100 125 150 175 200 225 250  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
275  
250  
225  
200  
175  
150  
125  
100  
75  
10  
9
8
7
6
5
4
3
2
1
0
V
= 50V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 150ºC  
50  
25  
T
J
= 25ºC  
0.8  
0
0.5  
0.6  
0.7  
0.9  
1
1.1  
0
20  
40  
60  
80  
100  
120  
140  
160  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
iss  
f = 1 MHz  
C
C
oss  
rss  
5
10  
15  
20  
25  
30  
35  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Second  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH180N10T  
IXTQ180N10T  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
R
= 3.3  
Ω
G
T = 25ºC  
J
V
V
= 10V  
= 50V  
GS  
DS  
R
= 3.3  
Ω
G
V
V
= 10V  
= 50V  
GS  
DS  
I
= 50A  
D
I
= 25A  
D
T = 125ºC  
J
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
24 26 28 30 32 34 36 38 40 42 44 46 48 50  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
180  
160  
140  
120  
100  
80  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
38  
64  
t f  
R
td(off)  
- - - -  
t r  
td(on)  
- - - -  
37  
36  
35  
34  
33  
32  
31  
30  
61  
58  
55  
52  
49  
46  
43  
40  
= 3.3 , V = 10V  
Ω
G
GS  
T = 125ºC, V = 10V  
J
25A < I < 50A  
GS  
D
V
= 50V  
DS  
V
= 50V  
DS  
I
= 50A  
D
I
= 25A  
D
60  
40  
20  
I
= 25A, 50A  
65  
D
0
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
45  
55  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
160  
140  
120  
100  
80  
250  
220  
190  
160  
130  
100  
70  
38  
37  
36  
35  
34  
33  
32  
31  
30  
64  
61  
58  
55  
52  
49  
46  
43  
40  
tf  
td(off)  
- - - -  
T = 125ºC, VGS = 10V  
J
VDS = 50V  
TJ = 125ºC  
tf  
R
td(off)  
- - - -  
= 3.3 , VGS = 10V  
Ω
G
VDS = 50V  
25A < I < 50A  
D
I
= 25A, 50A  
D
60  
T = 25ºC  
J
40  
20  
40  
25  
30  
35  
40  
45  
50  
2
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
ID - Amperes  
IXYS REF:T_180N10T (61) 11-20-06-A.xls  
© 2006 IXYS CORPORATION All rights reserved  
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