TM
Ce n t r a l
S e m ic o n d u c t o r Co r p .
NEW
CZS5064
SILICON CONTROLLED RECTIFIER
DESCRIPTION
TheCENTRALSEMICONDUCTORCZS5064
type is an epoxy molded PNPN Silicon
ControlledRectifier manufacturedinanepoxy
molded surface mount package, designed for
control systems and sensing circuit
applications.
SOT-223 CASE
o
MAXIMUM RATINGS (T =25 C unless otherwise noted)
A
SYMBOL
UNITS
Peak Repetitive Off-State Voltage
Peak Repetitive Reverse Voltage
RMS On-State Current
V
V
I
400
400
V
V
A
A
DRM
RRM
0.8
T(RMS)
T(AV)
o
Average On-State Current (T =67 C)
I
0.51
C
o
Operating Junction Temperature
Storage Temperature
Thermal Resistance
T
-40 to +125
-40 to +150
150
C
J
o
T
C
stg
o
Θ
C/W
JA
JC
o
Thermal Resistance
Θ
25
C/W
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
V =400V, R =1KΩ, T =125 C
MIN
MAX
50
UNITS
µA
µA
V
o
I
DRM
D
GK
C
o
I
V =400V, R =1KΩ, T =125 C
50
RRM
D
GK
C
V
I =1.2A
1.7
200
0.8
T
T
I
V =7.0V, R =100Ω, R =1KΩ
GK
µA
V
GT
D
L
V
V =7.0V, R =100Ω, R =1KΩ
GT
D
L
GK
o
V
V =400V, R =100Ω, T =125 C
0.1
V
GD
D
L
C
I
V =7.0, R =1KΩ
5.0
mA
H
D
GK
t
V =400V, I =1.0mA, I =1.0A,
ON
D
GT
F
R
=1.0Ω, di/dt=6.0A/µs
2.8 TYP
µs
GK
290
