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DXT2222A

型号:

DXT2222A

描述:

NPN表面贴装晶体管[ NPN SURFACE MOUNT TRANSISTOR ]

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

4 页

PDF大小:

242 K

DXT2222A  
NPN SURFACE MOUNT TRANSISTOR  
Features  
Epitaxial Planar Die Construction  
Complementary PNP Type Available (DXT2907A)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT89-3L  
Mechanical Data  
TOR  
LLEC  
CO  
2,4  
Case: SOT89-3L  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
Marking & Type Code Information: See Page 4  
Ordering Information: See Page 4  
Weight: 0.072 grams (approximate)  
3 E  
2 C  
1 B  
C 4  
T
1
ASE  
B
3
EMITTER  
EW  
VI  
OP  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
75  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
V
6
V
Peak Pulse Current  
800  
600  
mA  
mA  
Continuous Collector Current  
IC  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
1
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
125  
°C/W  
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C  
Operating and Storage Temperature Range  
JA  
-55 to +150  
°C  
Tj, TSTG  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
DS31156 Rev. 3 - 2  
1 of 4  
www.diodes.com  
DXT2222A  
© Diodes Incorporated  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Symbol  
Min  
Max  
Unit  
Test Conditions  
C = 10μA, IE = 0  
75  
40  
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
I
I
I
C = 10mA, IB = 0  
6.0  
E = 10μA, IC = 0  
nA  
μA  
VCB = 60V, IE = 0  
VCB = 60V, IE = 0, TA = 150°C  
Collector Cutoff Current  
10  
ICBO  
Collector Cutoff Current  
Emitter Cutoff Current  
10  
10  
20  
nA  
nA  
nA  
ICEX  
IEBO  
IBL  
V
CE = 60V, VEB(OFF) = 3.0V  
VEB = 3.0V, IC = 0  
CE = 60V, VEB(OFF) = 3.0V  
Base Cutoff Current  
V
ON CHARACTERISTICS (Note 4)  
IC = 100μA, VCE = 10V  
C = 1.0mA, VCE = 10V  
IC = 10mA, VCE = 10V  
C = 150mA, VCE = 10V  
IC = 500mA, VCE = 10V  
C = 10mA, VCE = 10V, TA = -55°C  
300  
35  
50  
75  
100  
40  
35  
I
DC Current Gain  
hFE  
I
I
50  
IC = 150mA, VCE = 1.0V  
IC = 150mA, IB = 15mA  
0.6  
0.3  
1.0  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
V
V
VCE(SAT)  
VBE(SAT)  
I
C = 500mA, IB = 50mA  
IC = 150mA, IB = 15mA  
C = 500mA, IB = 50mA  
1.2  
2.0  
I
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
8
pF  
pF  
Cobo  
Cibo  
fT  
300  
V
V
V
V
CB = 10V, f = 1.0MHz, IE = 0  
EB = 0.5V, f = 1.0MHz, IC = 0  
CE = 20V, IC = 20mA, f = 100MHz  
CE = 10V, IC = 150μA,  
Input Capacitance  
25  
Current Gain-Bandwidth Product  
MHz  
Noise Figure  
NF  
4.0  
dB  
RS = 1.0kΩ, f = 1.0kHz  
SWITCHING CHARACTERISTICS  
Delay Time  
10  
25  
ns  
ns  
ns  
ns  
td  
tr  
VCC = 30V, IC = 150mA,  
V
EB(off) = 0.5V, IB1 = 15mA  
Rise Time  
Storage Time  
225  
60  
ts  
tf  
VCC = 30V, IC = 150mA,  
IB1 = IB2 = 15mA  
Fall Time  
Notes:  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.  
R
= 125°C/W  
JA  
θ
VCE, COLLECTOR EMITTER VOLTAGE (V)  
DS31156 Rev. 3 - 2  
2 of 4  
www.diodes.com  
DXT2222A  
© Diodes Incorporated  
IC, COLLECTOR CURRENT (mA)  
IC, COLLECTOR CURRENT (mA)  
IC, COLLECTOR CURRENT (mA)  
V
= 20V  
CE  
f = 100MHz  
VR, REVERSE VOLTAGE (V)  
Fig. 8 Typical Gain-Bandwidth Product  
vs. Collector Current  
DS31156 Rev. 3 - 2  
3 of 4  
www.diodes.com  
DXT2222A  
© Diodes Incorporated  
Ordering Information (Note 5)  
Device  
Packaging  
Shipping  
DXT2222A-13  
SOT89-3L  
2500/Tape & Reel  
Notes:  
5. For packaging details, go to our website at http://www.diodes.com/ap02007.pdf.  
Marking Information  
(Top View)  
= Manufacturer’s code marking  
K1P = Product Type Marking Code  
YWW = Date Code Marking  
Y = Last digit of year ex: 7 = 2007  
WW = Week code 01 - 52  
YWW  
K1P  
Package Outline Dimensions  
D1  
C
SOT89-3L  
Dim Min Max Typ  
A
B
1.40 1.60 1.50  
0.45 0.55 0.50  
0.37 0.47 0.42  
0.35 0.43 0.38  
4.40 4.60 4.50  
1.50 1.70 1.60  
2.40 2.60 2.50  
E
H
B1  
C
L
D
B
D1  
E
e
B1  
e
1.50  
A
H
3.95 4.25 4.10  
0.90 1.20 1.05  
L
All Dimensions in mm  
D
Suggested Pad Layout  
1.7  
2.7  
0.4  
1.9  
1.3  
0.9  
3.0  
Unit: mm  
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
DS31156 Rev. 3 - 2  
4 of 4  
www.diodes.com  
DXT2222A  
© Diodes Incorporated  
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