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IXTP48N20T

型号：

IXTP48N20T

描述：

TrenchHVTM功率MOSFET[ TrenchHVTM Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

204 K

下载PDF手册
TrenchHVTM  
Power MOSFET  
VDSS = 150V  
ID25 = 42A  
RDS(on) ≤ 45mΩ  
IXTA42N15T  
IXTP42N15T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
S
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
150  
150  
V
V
(TAB)  
VDGR  
VGSM  
Transient  
± 30  
V
TO-220  
ID25  
IDM  
TC = 25°C  
42  
A
A
TC = 25°C, pulse width limited by TJM  
100  
IA  
TC = 25°C  
TC = 25°C  
5
A
G
D
EAS  
400  
mJ  
(TAB)  
Drain  
S
PD  
TC = 25°C  
200  
W
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
G = Gate  
D
=
TJM  
Tstg  
S = Source  
TAB = Drain  
-55 ... +175  
TL  
TSOLD  
1.6mm (0.062in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Features  
Md  
Mounting torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
z International standard packages  
z 175°C Operating Temperature  
z Avalanche rated  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
z
Symbol  
Test Conditions  
Characteristic Values  
Easy to mount  
Space savings  
High power density  
z
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
150  
2.5  
V
V
4.5  
Applications  
±100 nA  
μA  
z DC-DC converters  
z Battery chargers  
IDSS  
VDS = VDSS  
VGS = 0V  
5
z Switched-mode and resonant-mode  
power supplies  
TJ = 150°C  
150 μA  
45 mΩ  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
38  
z DC choppers  
z AC motor drives  
z Uninterruptible power supplies  
z High speed power switching  
applications  
DS99799A(11/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA42N15T  
IXTP42N15T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 (IXTA) Outline  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
20  
33  
S
Ciss  
Coss  
Crss  
1880  
255  
37  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
14  
16  
50  
25  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 15V, VDS =0.5 • VDSS, ID = 0.5 • ID25  
RG = 10Ω (External)  
Qg(on)  
Qgs  
21  
6.0  
6.6  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCH  
0.75 °C/W  
°C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
42  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse width limited by TJM  
IF = 21A, VGS = 0V, Note 1  
126  
1.1  
TO-220 (IXTP) Outline  
V
100  
ns  
IF = 25A, VGS = 0V, -di/dt = 100A/μs, VR = 50V  
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5mm or less from the package body.  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA42N15T  
IXTP42N15T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
120  
100  
80  
60  
40  
20  
0
VGS = 10V  
VGS = 10V  
9V  
9V  
8V  
8V  
7V  
6V  
7V  
6V  
5V  
5V  
8
0
0.0  
0.0  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
0
2
4
6
10 12 14 16 18 20 22 24 26 28  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 21A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
VGS = 10V  
8V  
7V  
I D = 42A  
I D = 21A  
6V  
5V  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 21A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
45  
40  
35  
30  
25  
20  
15  
10  
5
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS = 10V  
TJ = 175ºC  
15V  
- - - -  
TJ = 25ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
90 100 110  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
ID - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXTA42N15T  
IXTP42N15T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
70  
60  
50  
40  
30  
20  
10  
0
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
150ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
0
0
10  
20  
30  
40  
50  
60  
70  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.2  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
120  
100  
80  
60  
40  
20  
0
VDS = 75V  
I D = 25A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
= 1 MHz  
f
C
iss  
C
oss  
C
rss  
10  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Pulse Width - Seconds  
IXYS REF: T_42N15T(3G)11-21-08-A  
IXTA42N15T  
IXTP42N15T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
20  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
RG = 10Ω  
VGS = 15V  
VDS = 75V  
TJ = 25ºC  
RG = 10Ω  
VGS = 15V  
VDS = 75V  
I D = 42A  
I D = 21A  
TJ = 125ºC  
20  
22  
24  
26  
28  
30  
32  
34  
36  
38  
40  
42  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
40  
26  
24  
22  
20  
18  
16  
14  
12  
10  
28  
58  
t f  
t
d(off) - - - -  
RG = 10Ω, VGS = 15V  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 15V  
36  
32  
28  
24  
20  
16  
12  
8
26  
24  
22  
20  
18  
16  
14  
56  
54  
52  
50  
48  
46  
44  
VDS = 75V  
VDS = 75V  
I D = 21A  
I D = 42A, 21A  
I D = 42A  
10  
14  
18  
22  
26  
30  
34  
38  
42  
46  
50  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
29  
27  
25  
23  
21  
19  
17  
15  
58  
56  
54  
52  
50  
48  
46  
44  
80  
70  
60  
50  
40  
30  
20  
10  
260  
220  
180  
140  
100  
60  
t f  
t
d(off) - - - -  
RG = 10Ω, VGS = 15V  
t f  
t
d(off) - - - -  
TJ = 125ºC, VGS = 15V  
TJ = 125ºC  
TJ = 25ºC  
VDS = 75V  
VDS = 75V  
I D = 21A  
TJ = 25ºC  
I D = 42A  
20  
TJ = 125ºC  
-20  
20  
22  
24  
26  
28  
30  
32  
34  
36  
38  
40  
42  
10  
14  
18  
22  
26  
30  
34  
38  
42  
46  
50  
RG - Ohms  
ID - Amperes  
© 2008 IXYS CORPORATION, All rights reserved  
IXYS REF: T_42N15T(3G)11-21-08-A  
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