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IXTP96P085T

型号：

IXTP96P085T

描述：

TrenchPTM功率MOSFET P沟道增强模式[ TrenchPTM Power MOSFETs P-Channel Enhancement Mode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

193 K

下载PDF手册
TrenchPTM  
Power MOSFETs  
VDSS = - 85V  
ID25 = - 96A  
IXTA96P085T  
IXTP96P085T  
IXTH96P085T  
RDS(on)  
≤
13mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXTA)  
G
S
D (Tab)  
TO-220AB (IXTP)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 85  
- 85  
V
V
VDGR  
G
D
S
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
±15  
±25  
V
V
TO-247 (IXTH)  
ID25  
IDM  
TC = 25°C  
- 96  
A
A
TC = 25°C, Pulse Width Limited by TJM  
- 300  
IA  
EAS  
TC = 25°C  
TC = 25°C  
- 48  
1
A
J
G
D
S
D (Tab)  
PD  
TC = 25°C  
298  
W
G = Gate  
S = Source  
D
= Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Tab = Drain  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
Md  
Mounting Torque (TO-220 & TO-247)  
1.13/10  
Nm/lb.in.  
z International Standard Packages  
z Avalanche Rated  
Weight  
TO-263  
TO-220  
TO-247  
2.5  
3.0  
6.0  
g
g
g
z Extended FBSOA  
z Fast Intrinsic Diode  
z
Low RDS(ON) and QG  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
z
Easy to Mount  
Space Savings  
High Power Density  
(TJ = 25°C, Unless Otherwise Specified)  
z
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
VGS = ± 15V, VDS = 0V  
VDS = VDSS, VGS = 0V  
- 85  
V
- 2.0  
- 4.0  
V
Applications  
±100 nA  
z
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
IDSS  
- 10 μA  
- 750 μA  
z
TJ = 125°C  
z
z
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
13 mΩ  
z
z
DS100025B(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA96P085T IXTP96P085T  
IXTH96P085T  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
40  
66  
S
Ciss  
Coss  
Crss  
13.1  
1175  
460  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
23  
34  
45  
22  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Qg(on)  
Qgs  
180  
52  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Pins: 1 - Gate  
2 - Drain  
Qgd  
62  
3 - Source  
RthJC  
RthCS  
0.42 °C/W  
TO-220  
TO-247  
0.50  
0.21  
°C/W  
°C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
- 96  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = - 48A, VGS = 0V, Note 1  
- 394  
-1.3  
TO-220 Outline  
trr  
QRM  
IRM  
55  
100  
- 3.6  
ns  
nC  
A
IF = - 48A, -di/dt = -100A/μs  
VR = - 43V, VGS = 0V  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
TO-263 Outline  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
1. Gate  
2. Drain  
3. Source  
4. Drain  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA96P085T IXTP96P085T  
IXTH96P085T  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
-350  
-300  
-250  
-200  
-150  
-100  
-50  
-100  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
VGS = -10V  
VGS = -10V  
- 9V  
- 9V  
- 8V  
- 7V  
- 8V  
- 7V  
- 6V  
- 6V  
- 5V  
- 5V  
0
0
-2  
-4  
-6  
-8  
-10  
-12  
-14  
-16  
-18  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-1.4  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = - 48A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
-100  
-90  
-80  
-70  
-60  
-50  
-40  
-30  
-20  
-10  
0
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
VGS = -10V  
- 9V  
- 8V  
- 7V  
VGS = -10V  
I D = - 96A  
- 6V  
- 5V  
I D = - 48A  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1  
-1.2  
-1.4  
-1.6  
-1.8  
-2  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = - 48A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-110  
-90  
-70  
-50  
-30  
-10  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = -10V  
TJ = 125ºC  
TJ = 25ºC  
0
-50  
-100  
-150  
-200  
-250  
-300  
-350  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA96P085T IXTP96P085T  
IXTH96P085T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
-140  
-120  
-100  
-80  
-60  
-40  
-20  
0
100  
80  
60  
40  
20  
0
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
-2.5  
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
-1.8  
-40  
0
0
1
-20  
-40  
-60  
-80  
-100  
-120  
-140  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
-300  
-250  
-200  
-150  
-100  
-50  
VDS = - 43V  
I
I
D = - 48A  
G = -1mA  
TJ = 125ºC  
TJ = 25ºC  
0
-0.2  
-0.4  
-0.6  
-0.8  
-1.0  
-1.2  
-1.4  
-1.6  
20  
40  
60  
80  
100  
120  
140  
160  
180  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
- 1,000  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
100µs  
25µs  
1ms  
RDS(on) Limit  
10ms  
C
100ms  
iss  
-
100  
- 10  
DC  
C
oss  
TJ = 150ºC  
TC = 25ºC  
Single Pulse  
C
rss  
-
1
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-
-
-
100  
10  
VDS - Volts  
VDS - Volts  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXTA96P085T IXTP96P085T  
IXTH96P085T  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
44  
40  
36  
32  
28  
24  
20  
16  
44  
40  
36  
32  
28  
24  
20  
RG = 1Ω, VGS = -10V  
VDS = - 43V  
RG = 1Ω, VGS = -10V  
VDS = - 43V  
TJ = 25ºC  
I D = - 48A  
I D = - 24A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
-24  
-26  
-28  
-30  
-32  
-34  
-36  
-38  
-40  
-42  
-44  
-46  
-48  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
26  
70  
65  
60  
55  
50  
45  
40  
35  
200  
180  
160  
140  
120  
100  
80  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
t r  
td(on) - - - -  
tf  
t
d(off) - - - -  
RG = 1Ω, VGS = -10V  
VDS - 43V  
25  
24  
23  
22  
21  
20  
19  
TJ = 125ºC, VGS = -10V  
VDS = - 43V  
I D = - 48A, - 24A  
=
I D = - 24A  
I D = - 48A  
60  
40  
20  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
280  
240  
200  
160  
120  
80  
350  
25  
66  
62  
58  
54  
50  
46  
42  
tf  
t
d(off) - - - -  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGS = -10V  
VDS = - 43V  
300  
250  
200  
150  
100  
50  
24  
23  
22  
21  
20  
19  
,
TJ = 125ºC VGS = - 10V  
VDS = - 43V  
I D = - 24A, - 48A  
T
J
= 25ºC, 125ºC  
40  
0
0
-24 -26 -28 -30 -32 -34 -36 -38 -40 -42 -44 -46 -48  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
RG - Ohms  
ID - Amperes  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA96P085T IXTP96P085T  
IXTH96P085T  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_96P085T(A6)11-08-10-A  
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