DZT658
NPN SURFACE MOUNT TRANSISTOR
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Features
•
•
•
•
•
Epitaxial Planar Die Construction
3
2
1
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
4
SOT-223
Mechanical Data
COLLECTOR
2,4
•
•
Case: SOT-223
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.115 grams
3 E
2 C
1 B
C 4
1
BASE
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•
3
EMITTER
TOP VIEW
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Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
400
400
5
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
Peak Pulse Current
0.5
1
A
A
ICM
Thermal Characteristics
Characteristic
Symbol
Value
1
Unit
W
Power Dissipation @TA = 25°C (Note 3)
PD
125
°C/W
°C
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C
Operating and Storage Temperature Range
Rθ
JA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit Test Condition
Off Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
400
400
5
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
IC = 100μA, IE = 0
IC = 10mA, IB = 0
IE = 100μA, IC = 0
VCB = 320V, IE = 0
VEB = 4V, IC = 0
V
100
nA
nA
⎯
⎯
Emitter Cutoff Current
100
IEBO
On Characteristics (Note 4)
IC = 20mA, IB = 1mA
IC = 50mA, IB = 5mA
⎯
⎯
⎯
0.075
0.06
0.08
0.3
0.25
0.5
V
V
V
Collector-Emitter Saturation Voltage
VCE(SAT)
I
C = 100mA, IB = 10mA
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
0.9
1
V
V
VBE(SAT)
VBE(ON)
⎯
⎯
⎯
⎯
IC = 100mA, IB = 10mA
VCE = 5V, IC = 100mA
VCE = 5V, IC = 1mA
⎯
⎯
⎯
50
50
40
110
100
85
DC Current Gain
hFE
⎯
VCE = 5V, IC = 100mA
V
CE = 10V, IC = 200mA
AC Characteristics
Transition Frequency
Output Capacitance
50
MHz
pF
fT
Cobo
ton
⎯
⎯
138
175
⎯
10
VCE = 20V, IC = 30mA, f = 30MHz
VCB = 20V, f = 1MHz
⎯
⎯
⎯
ns
ns
VCC = 100V, IC = 100mA
IB1 = 10mA, IB2 = -20mA
⎯
⎯
Switching Times
toff
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 3 or in Diodes Inc. suggested pad layout document AP02001,
which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.
DS31308 Rev. 2 - 2
1 of 3
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DZT658
© Diodes Incorporated
